MMBT918LT1

LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon MMBT918LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Value 15 30 3.0 50 Unit Vdc Vdc Vdc mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT9181LT1 = M3B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 3.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 1.0 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 15 Vdc, I E = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CBO V 30 3.0 — — — 50 Vdc Vdc nAdc V (BR)CEO 15 — Vdc (BR)EBO I CBO O2–1/2 LESHAN RADIO COMPANY, LTD. MMBT918LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (I C = 3.0 mAdc, V CE = 1.0 Vdc) Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) Base–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) hFE VCE(sat) V BE(sat) 20 –– — –– 0.4 1.0 –– Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz) Output Capacitance (V CB = 0 Vdc, I E = 0, f = 1.0 MHz) (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure (I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 Ω, f = 60 MHz) (Figure 1) Power Output (I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz) Common–Emitter Amplifier Power Gain (I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz) V BB EXTERNAL 100 k fT C obo — — C ibo NF P out 600 — MHz pF 3.0 1.7 2.0 6.0 — — pF dB mW dB — — 30 11 G pe V CC 1000 pF BYPASS 0.018 µF 0.018 µF 3 C G 0.018 µF 0.018 µF NF TEST CONDITIONS I C = 1.0 mA V CE = 6.0 VOLTS R S = 50 Ω f = 60 MHz G pe TEST CONDITIONS I C = 6.0 mA V CE = 12 VOLTS f = 200 MHz 50 Ω RF VM Figure 1. NF, G pe Measurement Circuit 20–200 O2–2/2