MMBTA05LT1

LESHAN RADIO COMPANY, LTD. Driver Transistors NPN Silicon 3 COLLECTOR MMBTA05LT1 MMBTA06LT1 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO Value MMBTA05 MMBTA06 60 60 4.0 500 80 80 Unit Vdc Vdc Vdc mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 R θJA T J , T stg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBTA05LT1 = 1H, MMBTA06LT1 = 1GM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) Emitter–Base Breakdown Voltage (I E = 100 µAdc, I C = 0) Collector Cutoff Current ( V CE = 60Vdc, I B = 0) Emitter Cutoff Current ( V CB = 60Vdc, I E = 0) MMBTA05 ( V CB = 80Vdc, I E = 0) MMBTA06 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. I CBO — — 0.1 0.1 µAdc MMBTA05 MMBTA06 V (BR)EBO V (BR)CEO 60 80 4.0 — — — — 0.1 Vdc Vdc µAdc I CES M25–1/2 LESHAN RADIO COMPANY, LTD. MMBTA05LT1 MMBTA06LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 100 100 VCE(sat) — V BE(sat) Min Max Unit –– ON CHARACTERISTICS DC Current Gain (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 100 mAdc, V CE = 1.0 Vdc) Collector–Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc) Base–Emitter On Voltage (I C = 100 mAdc, V CE= 1.0 Vdc) — — Vdc 0.25 Vdc — 1.2 SMALL–SIGNAL CHARACTERISTICS Current –Gain – Bandwidth Product(4) (V CE = 2.0 V, I C = 10mA, f = 100 MHz) 4. f T is defined as the frequency at which |h f e | extrapolates to unity. fT 100 — MHz M25–2/2