MMBTA13LT1

LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors NPN Silicon 3 COLLECTOR MMBTA13LT1 MMBTA14LT1 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CES V CBO V EBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 R θJA T J , T stg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBTA13LT1 = 1M; MMBTA14LT1 = 1N ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 100 µAdc, V BE = 0) Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. I EBO — 100 nAdc V (BR)CEO 30 — — 100 Vdc nAdc I CBO M26–1/5 LESHAN RADIO COMPANY, LTD. MMBTA13LT1 MMBTA14LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBTA13 MMBTA14 MMBTA13 MMBTA14 VCE(sat) V BE 5,000 10,000 10,000 20,000 –– — — — — — 1.5 2.0 Vdc Vdc Min Max Unit –– ON CHARACTERISTICS (3) DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) (I C = 100mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 100 mAdc, I B = 0.1 mAdc) Base–Emitter On Voltage (I C = 100mAdc, V CE = 5.0Vdc) SMALL–SIGNAL CHARACTERISTICS Current – Gain–Bandwidth Product(4) (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) 3. Pulse Test: Pulse Width