MMBTA42LT1

LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon 3 COLLECTOR 1 BASE MMBTA42LT1 MMBTA43LT1 3 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value MMBTA42 MMBTA43 300 300 6.0 500 200 200 6.0 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 R θJA T J , T stg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBTA42LT1 = 1D; MMBTA43LT1 = M1E ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) Emitter–Base Breakdown Voltage (I C= 100 µAdc, I E= 0) Emitter–Base Breakdown Voltage (I E= 100 µAdc, I C= 0) Collector Cutoff Current ( V CB= 200Vdc, I E= 0) ( V CB= 160Vdc, I E= 0) Emitter Cutoff Current ( V EB= 6.0Vdc, I C= 0) ( V EB= 4.0Vdc, I C= 0) MMBTA42 MMBTA43 MMBTA42 MMBTA43 I EBO — — 0.1 0.1 MMBTA42 MMBTA43 V (BR)EBO V (BR)CEO Vdc 300 200 — — Vdc 300 200 6.0 — — — Vdc µAdc — — 0.1 0.1 µAdc MMBTA42 MMBTA43 V (BR)CBO I CBO 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width