MMBTA56LT1

LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon 3 COLLECTOR MMBTA55LT1 MMBTA56LT1 3 1 BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO 2 Value MMBTA55 MMBTA56 –60 –60 –4.0 –500 –80 –80 Unit Vdc Vdc Vdc mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C R θJA PD R θJA T J , T stg DEVICE MARKING MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B= 0 ) Emitter–Base Breakdown Voltage (I E = –100 µAdc, I C = 0 ) Collector Cutoff Current ( V CE = –60Vdc, I B = 0) Collector Cutoff Current ( V CB = –60Vdc, I E= 0) ( V CB = –80Vdc, I E= 0) MMBTA55 MMBTA56 V (BR)EBO V (BR)CEO Vdc –60 –80 –4.0 — — — — –0.1 Vdc µAdc µAdc — — –0.1 –0.1 I CEO I CBO MMBTA55 MMBTA56 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width