MMBTA64LT1

LESHAN RADIO COMPANY, LTD. Darlington Transistors PNP Silicon 3 COLLECTOR MMBTA63LT1 MMBTA64LT1 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT–23 (TO–236AB) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CES V CBO V EBO Value –30 –30 –10 –500 Unit Vdc Vdc Vdc mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING MMBTA63LT1 = 2U MMBTA64LT1 = 2V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –100 µAdc, ) Collector Cutoff Current ( V CB = –30Vdc) Emitter Cutoff Current ( V EB = –10Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO I CBO I EBO –30 — — — –100 –100 Vdc nAdc nAdc M30–1/3 LESHAN RADIO COMPANY, LTD. MMBTA63LT1 MMBTA64LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBTA63 MMBTA64 MMBTA63 MMBTA64 VCE(sat) V BE(on) 5,000 10,000 10,000 20,000 –– — — — — — –1.5 –2.0 Vdc Vdc Min Max Unit –– ON CHARACTERISTICS DC Current Gain(3) (I C = –10 mAdc, V CE = –5.0 Vdc) (I C = –10 mAdc, V CE = –5.0 Vdc) (I C = –100mAdc, V CE = –5.0Vdc) (I C = –100mAdc, V CE = –5.0Vdc) Collector–Emitter Saturation Voltage (I C = –100 mAdc, I B = –0.1 mAdc) Base–Emitter On Voltage (I C = –100mAdc, V CE = –5.0Vdc) SMALL–SIGNAL CHARACTERISTICS Current – Gain–Bandwidth Product(4) (V CE = –5.0 Vdc, I C = –10mAdc, f = 100 MHz) 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. fT 125 — MHz M30–2/3 LESHAN RADIO COMPANY, LTD. MMBTA63LT1 MMBTA64LT1 h FE , DC CURRENT GAIN (X1.0 K) 200 T A = 125°C 100 70 50 –10 V 30 20 25°C V CE = –2.0 V –5.0 V 10 7.0 5.0 3.0 2.0 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –55°C I C , COLLECTOR CURRENT (mA) Figure 1. DC Current Gain V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) –2.0 –2.0 T A = 25°C –1.6 T A = 25°C –1.8 –1.6 V BE(sat) @ I C /I B = 100 V, VOLTAGE (VOLTS) I C = –10 mA –50 mA –100 mA –175 mA –1.4 –1.2 –1.0 –0.8 –0.6 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –300 mA –1.2 V BE(on) @ V CE = –5.0 V –0.8 V CE(sat) @ I C /I B = 1000 I C /I B = 100 –0.4 –0 –0.3–0.5 –1.0 –2.0–3.0 –5.0 –10 –20–30 –50 –100 –200–300 –50–100 –300 –500 –1k –2k –5k –10k I C , COLLECTOR CURRENT (mA) I B , BASE CURRENT (mA) Figure 2. “On” Voltage |h FE |, HIGH FREQUENCY CURRENT GAIN 10 Figure 3. Collector Saturation Region V CE = –5.0 V 4.0 3.0 2.0 f = 100 MHz T A = 25°C 1.0 0.4 0.2 0.1 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1k I C , COLLECTOR CURRENT (mA) Figure 4. High Frequency Current Gain M30–3/3