MMBTH10LT1

LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol V V V CEO CBO EBO Value 25 30 3.0 Unit Vdc Vdc Vdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBTH10LT1 = 3EM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc, I B= 0 ) Collector–Base Breakdown Voltage (I C = 100 µAdc , I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc , I C= 0) Collector Cutoff Current ( V CB = 25Vdc , I E = 0 ) Emitter Cutoff Current ( V EB = 2.0Vdc , I C= 0 ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CBO V (BR)EBO I CBO I EBO 30 3.0 — — — — — — 100 100 Vdc Vdc nAdc nAdc V (BR)CEO 25 — — Vdc — — M33–1/4 LESHAN RADIO COMPANY, LTD. MMBTH10LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = 4.0 mAdc, V CE = 10 Vdc) Collector–Emitter Saturation Voltage (I C = 4.0mAdc, I B = 0.4 mAdc) Base–Emitter On Voltage (I C = 4.0mAdc, V CE = 10Vdc) hFE VCE(sat) V BE 60 — — — — — — 0.5 0.95 — Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current Gain–Bandwidth Product (V CE = 10 Vdc, I C = 4.0mAdc, f = 100MHz) Collector –Base Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Collector –Base Feedback Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Collector Base Time Constant ( I C = 4.0mAdc,V CB=10 Vdc, f = 31.8 MHz) fT C cb C rb 650 — — — — — — — — 0.7 0.65 9.0 MHz pF pF ps rb’ C C M33–2/4 LESHAN RADIO COMPANY, LTD. MMBTH10LT1 TYPICAL CHARACTERISTICS COMMON–BASE y PARAMETERS versus FREQUENCY (V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25°C) yib , INPUT ADMITTANCE 80 70 0 y ib , INPUT ADMITTANCE(mmhos) g ib –10 60 –b ib 40 30 20 10 0 100 jb ib (mmhos) 50 –20 1000MHz –30 –40 700 400 200 100 –50 200 300 400 500 700 1000 –60 0 10 20 30 40 50 60 70 80 f, FREQUENCY (MHz) g ib (mmhos) Figure 1. Rectangular Form Figure 2. Polar Form y fb , FORWARD TRANSFER ADMITTANCE y ib , FORWARD TRANSFER ADMITTANCE (mmhos) 70 60 50 40 30 20 10 0 –10 –20 –30 100 200 300 400 500 700 1000 60 b fb 200 50 400 600 700 100 –g fb jb fb(mmhos) 40 30 1000MHz 20 10 70 60 50 40 30 20 10 0 10 20 30 f, FREQUENCY (MHz) g fb (mmhos) Figure 3. Rectangular Form Figure 4. Polar Form M33–3/4 LESHAN RADIO COMPANY, LTD. MMBTH10LT1 TYPICAL CHARACTERISTICS COMMON–BASE y PARAMETERS versus FREQUENCY (V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25°C) y rb , REVERSE TRANSFER ADMITTANCE (mmhos) y rb , REVERSE TRANSFER ADMITTANCE 5.0 0 100 4.0 –1.0 200 MPS H11 jb rb (mmhos) 3.0 –2.0 400 –b rb 2.0 –b rb MPS H1 –g rb –3.0 700 –4.0 1.0 1000MHz –5.0 700 1000 2.0 1.8 1.2 0.8 0.4 0 0.4 0.8 1.2 1.6 2.0 0 100 200 300 400 500 f, FREQUENCY (MHz) g rb (mmhos) Figure 5. Rectangular Form Figure 6. Polar Form y ob , OUTPUT ADMITTANCE y ob , OUTPUT ADMITTANCE (mmhos) 10 9.0 8.0 10 1000MHz 8.0 6.0 5.0 4.0 3.0 jb ob (mmhos) 7.0 700 6.0 b ob 4.0 400 200 2.0 1.0 0 100 200 300 400 500 700 1000 2.0 g ob 0 0 100 2.0 4.0 6.0 8.0 10 f , FREQUENCY (MHz) g ob (mmhos) Figure 7. Rectangular Form Figure 8. Polar Form M33–4/4