MMBV109LT1

LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Available in Surface Mount Package MMBV109LT1 MBV109T1 MV209 26–32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 3 3 CATHODE 1 ANODE 1 2 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol MBV109T1 VR IF PD 280 2.8 TJ T stg Value MMBV109LT1 30 200 200 2.0 +125 –55 to +150 Unit MV209 Vdc mAdc 200 1.6 mW mW/°C °C °C CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) DEVICEMARKING MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage ( I R = 10 µ Adc) Reverse Voltage Leakage Current ( V R = 25Vdc) Diode Capacitance Temperature Coefficient (V R = 3.0 Vdc, f = 1.0 MHz) Symbol V (BR)R IR TC C Min 30 — — Typ — — 300 Max — 0.1 — Unit Vdc mAdc ppm/°C C T Diode Capacitance VR =3.0Vdc, f =1.0MHz pF Device Type MBV109T1, MMBV109LT1, MV209 Min 26 Nom 29 Max 32 Q, Figure of Merit V R = 3.0Vdc f = 50MHz Min 200 CR, Capacitance Ratio C3 / C 25 f=1.0MHz (Note 1) Min 5.0 Max 6.5 1. C R is the ratio of C t measured at 3 V dc divided by C t measured at 25 Vdc. MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk. MBV109. MMBV109*. MV209*–1/2 LESHAN RADIO COMPANY, LTD. MBV109T1 MMBV109LT1 MV209 40 36 1000 C T , CAPACITANCE (pF) 28 24 20 16 12 8 4 0 1 3 10 30 100 Q , FIGURE OF MERIT 32 100 10 10 100 1000 V R , REVERSE VOLTAGE (VOLTS) f , FREQUENCY ( MHz ) Figure 1. Diode Capacitance Figure 2. Figure of Merit 100 CT,DIODECAPACITANCE(NORMALIZED) 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 –25 0 +25 +50 +75 +100 +125 I R , REVERSE CURRENT (nA) 20 10 2.0 1.0 0.2 0.1 0.02 0.01 0.002 0.001 –60 –40 –20 0 20 40 60 80 100 120 140 T A , AMBIENT TEMPERATURE (°C) T A , AMBIENT TEMPERATURE (°C) Figure 3 . Leakage Current Figure 4. Diode Capacitance NOTES ON TESTING AND SPECIFICATIONS 1. C R is the ratio of C t measured at 3.0 Vdc divided by C t measured at 25 Vdc. MBV109. MMBV109*. MV209*–2/2