MMBV2109LT1

LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. Also available in Surface Mount Package up to 33pF. • High Q • Controlled and Uniform Tuning Ratio • Standard Capacitance Tolerance —10% • Complete Typical Design Curves MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2106 MV2108 MV2109 MV2111 MV2115 6.8-100p 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES 3 3 CATHODE 1 ANODE 1 2 CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS(EACH DIODE) Symbol VR IF PD Forward power Dissipation @T A = 25°C Derate above 25°C Junction Temperature TJ Storage Temperature Range T stg Rating Reverse Voltage Forward Current M V 2 1 X X MMBV21XXLT1 Unit 30 Vdc 200 mAdc 280 225 mW 2.8 1.8 mW/°C +150 °C –55 to +150 °C DEVICE MARKING MMBV2101LT1=M4G MMBV2103LT1=4H MMBV2105LT1=4U MMBV2107LT1=4W MMBV2108LT1=4X MMBV2109LT1=4J Symbol V (BR)R IR TCC Min 30 — — Typ — — 280 Max — 0.1 — Unit Vdc µ Adc ppm/°C ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=1.0µAdc) Reverse Voltage Leakage Current (VR=25Vdc,TA=25°C) Diode Capacitance Temperature Coefficient (VR=4.0Vdc,f=1.0MHz) MMBV2101~MMBV2109 –1/3 MV2101~MV2115 LESHAN RADIO COMPANY, LTD. MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115 C Device V R T , D iode Capacitance = 4 .0 Vdc, f = 1.0 MHz pF Min 6.1 9.0 10.8 13.5 19.8 24.3 29.7 42.3 90 Nom 6.8 10 12 15 22 27 33 47 100 Max 7.5 11 13.2 16.5 24.2 29.7 36.3 51.7 110 Q, Figure of Merit V R = 4 .0 Vdc, f = 50 MHz Typ 450 400 400 400 350 300 200 150 100 T R, Tuning Ratio C 2 / C 30 f = 1.0 MHz Min 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.6 Typ 2.7 2.9 2.9 2.9 2.9 3.0 3.0 3.0 3.0 Max 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.3 MMBV2101LT1/MV2101 MMBV2103LT1 MV2104 MMBV2105LT1/MV2105 MMBV2107LT1 MMBV2108LT1/MV2108 MMBV2109LT1/MV2109 MV2111 MV2115 MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, a re also available in bulk. Use the device title and drop the “T1” suffix when ordering any of these devices in bulk. PARAMETER TEST METHODS 4.T CC,DIODE CAPACITANCE TEMPERATURE COEFFICIENT TCC is guaranteed by comparing CT at VR=4.0Vdc,f=1.0MHz, TA= – 65°C with CT at VR=4.0Vdc,f=1.0MHz,TA= +85°C in the following equation,which defines TC C: CT(+85°C) – CT(–65°C ) 106 . TC C = 85+65 C T(25°C) Accuracy limited by measurement of CT to±0.1pF. 1. C T , D IODE CAPACITANCE (C T = C C + C J ). C T is measured at 1.0 MHz using a ca-pacitance bridge (Boonton Electronics Model 75A or equivalent). 2. T R, TUNING RATIO T R is the ratio of C T measured at 2.0 Vdc divided by C T measured at 30 Vdc. 3. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an ad-mittance bridge at the specified frequency and substitut-ing in the following equations: Q= 2πfC G (Booton Electronics Model 33As8 or equivalent).Use Lead Length ~1/16”. ~ MMBV2101~MMBV2109 –2/3 MV2101~MV2115 LESHAN RADIO COMPANY, LTD. MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115 TYPICAL DEVICE CHARACTERISTICS 1000 500 C T , DIODE CAPACITANCE (pF) MV2115 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 MMBV2109LT1/MV2109 MMBV2105LT1/MV2105 MMBV2101LT1/MV2101 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage 1.040 NORMALIZED DIODE CAPACITANCE I R , REVERSE CURRENT (nA) 1.030 1.020 1.010 1.000 0.990 0.980 0.970 0.960 -75 -50 NORMALIZED TO CT at TA = 25°C VR = (CURVE) -25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (°C) +100 +125 VR = 4.0 Vdc VR = 30 Vdc VR = 2.0 Vdc 100 50 20 10 5.0 2.0 1.0 0.50 0.20 0.10 0.05 0.02 0.01 0 5.0 10 15 20 25 30 TA = 75°C TA = 125°C TA = 25°C VR, REVERSE VOLTAGE (VOLTS) Figure 2. Normalized Diode Capacitance versus Junction Temperature 5000 3000 2000 Q, FIGURE OF MERIT 1000 500 300 200 100 50 30 20 10 1.0 2.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) TA = 25°C f = 50 MHz 20 30 MMBV2101LT1/MV2101 MMBV2109LT1/MV2109 Q, FIGURE OF MERIT 5000 3000 2000 1000 500 300 200 100 50 30 20 10 10 Figure 3. Reverse Current versus Reverse Bias Voltage MMBV2101LT1/MV2101 MV2115 MV2115 TA = 25°C VR = 4.0 Vdc 20 MMBV2109LT1/MV2109 100 30 50 70 f, FREQUENCY (MHz) 200 250 Figure 4. Figure of Merit versus Reverse Voltage Figure 5. Figure of Merit versus Frequency MMBV2101~MMBV2109 –3/3 MV2101~MV2115