LESHAN RADIO COMPANY, LTD.
Silicon Pin Diode
This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package.
MMBV3401LT1
SILICON PIN SWITCHING DIODE
• Rugged Pin Structure Coupled with Wirebond Construction
for Optimum Reliability
• Low Capacitance—0.7pF Typ at VR=20Vdc • Very Low Series Resistance at 100MHz—0.34Ohms(Typ)@IF=10mAdc
3
3 CATHODE
1 ANODE
1 2
CASE 318–08, STYLE 6 SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating Reverse Voltage Forward power Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR PD TJ T stg Value 20 200 2.0 +125 –55 to +150 Unit Vdc mW mW/°C °C °C
DEVICE MARKING
MMBV3401LT1=4D
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR=10µAdc) Diode Capacitance (VR=20 Vdc) Series Resistance(figure5) (IF=10mAdc,f=100MHz) Reverse Voltage Leakage Current (V R=15Vdc) Symbol V (BR)R CT RS I
R
Min 35 — — —
Typ — — — —
Max — 1.0 0.7 0.1
Unit Vdc pF Ω µ Adc
MMBV3401LT1–1/2
LESHAN RADIO COMPANY, LTD.
MMBV3401LT1
TYPICAL CHARACTERISTICS
R S , SERIES RESISTANCE ( OHMS)
1.6 1.4 1.2
50
I F , FORWARD CURRENT ( mA )
40
T A = 25°C
1.0 0.8 0.6 0.4 0.2 0 0 2.0 4.0 6.0 8.0 10 12 14 16
30
T A = 25°C
20
10
0 0.5 0.6 0.7 0.8 0.9 1.0
I F , FORWARD CURRENT ( mA )
V F , FORWARD VOLTAGE ( VOLTS )
Figure 1. Series Resistance
Figure 2. Forward Voltage
20
100 40
C T , DIODE CAPACITANDE ( pF )
10 7.0 5.0
I R, REVERSE CURRENT (µA)
10 4.0 1.0 0.4 0.1 0.04 0.01 0.004 0.001 - 60 - 20 0 +20 +60 +100 +140
T A = 25°C
V R= 25Vdc
2.0 1.0 0.7 0.5
0.2 +3.0 0 -3.0 -6.0 -9.0 -12 -15 -18 -21 -24 -17
V R , FORWARD VOLTAGE ( VOLTS )
T A , AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
Figure 4. Leakage Current
MMBV3401LT1–2/2
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