MMBV432

LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT–23 plastic package for high volume, pick and place assembly requirements. • High Figure of Merit— Q = 150 (Typ) @ V R = 2.0 Vdc, f = 100 MHz • Guaranteed Capacitance Range • Dual Diodes – Save Space and Reduce Cost • Surface Mount Package • Available in 8 mm Tape and Reel • Monolithic Chip Provides Improved Matching – Guaranteed ± 1.0% (Max) Over Specified Tuning Range MMBV432LT1 DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 3 1 2 1 2 CASE 318–08, STYLE 9 SOT– 23 (TO–236AB) 3 MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg Value 14 200 225 1.8 +125 –55 to +125 Unit Vdc mAdc mW mW/°C °C °C DEVICE MARKING MMBV432LT1=M4B ELECTRICAL CHARACTERISTICS(T A=25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=10µAdc) Reverse Voltage Leakage Current (V R=9.0Vdc) Diode Capacitance (VR=2.0 Vdc,f=1.0MHz) Capacitance Ratio C2/C8 (f=1.0MHz) Figure of Merit (VR=2.0 Vdc, f=100MHz) Symbol V (BR)R IR CT CR Q Min 14 — 43 1.5 100 Typ — — — — 150 Max — 100 48.1 2.0 — Unit Vdc nAdc pF — — MMBV432–1/2 LESHAN RADIO COMPANY, LTD. MMBV432LT1 TYPICAL CHARACTERISTICS 100 550 C T , DIODE CAPACITANCE (pF) 70 50 Q , FIGURE OF MERIT 450 350 30 f = 1 .0MHz 20 250 T A = 25°C 150 f = 1 00MHz T A = 25°C 10 1 50 2 3 5 7 10 0 2 4 6 8 10 V R , REVERSE VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit versus Voltage 2000 1000 CT,DIODECAPACITANCE(NORMALIZED) 1.06 V R=2.0Vdc T A = 25°C 1.04 Q , FIGURE OF MERIT 500 V R= 2.0Vdc 1.02 200 100 50 V R= 4.0Vdc 1.00 0.98 f = 1 .0MHz 20 10 20 30 50 70 10 200 300 0.96 –75 –50 –25 0 +25 +50 +75 +100 +125 f , FREQUENCY ( MHz ) T J , JUNCTION TEMPERATURE (°C) Figure 3. Figure of Merit versus Frequency Figure 4. Diode Capacitance versus Temperature 10 I R , REVERSE CURRENT( nA) 5 2 1 0.5 0.2 0.1 0.05 T A = 125°C TA = 75°C T A = 25°C 0.02 0.01 0 2 4 6 8 10 12 14 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Reverse Current versus Reverse Voltage MMBV432–2/2