MMUN2232LT1

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. MMUN2211LT1 Series MMUN2211LT1 SERIES 3 1 2 CASE 318, STYLE 6 SOT–23 (TO–236AB) • Simplifies Circuit Design • Reduces Board Space and Component Count • The SOT-23 package can be soldered using wave or reflow. The • modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the13 inch/10,000 unit reel. PIN 3 PIN 1 BASE (INPUT) R1 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) R2 MARKINGDIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C (Note 1.) Derate above 25°C Symbol VCBO VCEO IC PD Value 50 50 100 *200 1.6 Unit Vdc Vdc mAdc mW mW/°C A6x M A6x = Device Marking x M = A – L(See Page 2) = Date Code ORDERING INFORMATION Device Package SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel DEVICE MARKING AND RESISTOR VALUES Device MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 Marking A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K A8L A8M A8R A8U R1(K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 2.2 100 R2(K) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 47 ∞ ∞ MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. MMUN2211S-1/11 LESHAN RADIO COMPANY, LTD. MMUN2211LT1 Series THERMAL CHARACTERISTICS Rating Thermal Resistance – Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RθJA TJ, Tstg TL Value 625 –65 to +150 260 10 Unit °C/W °C °C Sec ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 ICBO ICEO IEBO – – – – – – – – – – – – – – – – 50 50 – – – – – – – – – – – – – – – – – – 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 4.0 0.1 – – nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (Note 2.), (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (Note 2.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 160 160 – 60 100 140 140 350 350 5.0 15 30 200 150 140 350 350 – – – – – – – – – – – – – – – 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/ MMUN2235LT1/MMUN2238LT1 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. VCE(sat) MMUN2211S–2/11 LESHAN RADIO COMPANY, LTD. MMUN2211LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 3.) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω) VOL MMUN2211LT1 MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2213LT1 MMUN2241LT1 VOH – – – – – – – – – – – – – – 4.9 – – – – – – – – – – – – – – – 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 – Vdc Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k Ω) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k Ω ) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω ) MMUN2215LT1 MMUN2216LT1 MMUN2233LT1 MMUN2238LT1 Input Resistor MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 MMUN2214LT1 MMUN2215LT1/MMUN2216LT1/MMUN2238LT1 MMUN2241LT1 MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 1.54 70 0.8 0.17 – – 0.8 0.055 0.38 0.038 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 2.2 100 1.0 0.21 – – 1.0 0.1 0.47 0.047 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 2.88 130 1.2 0.25 – – 1.2 0.185 0.56 0.056 kΩ Resistor Ratio R1/R2 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. MMUN2211S–3/11 LESHAN RADIO COMPANY, LTD. MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211LT1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) PD, POWER DISSIPATION (MILLIWATTS) 250 1 IC/IB = 10 TA = –25°C 25°C 75°C 200 0.1 150 100 RθJA= 625°C/W 0.01 50 0 –50 0 50 100 150 0.001 0 20 40 60 80 TA, AMBIENT TEMPERATURE (5°C) IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75°C 25°C –25°C 100 Cob, CAPACITANCE (pF) 3 4 Figure 2. VCE(sat) vs. IC f = 1 MHz lE = 0 A TA = 25°C 2 1 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 75°C 10 25°C TA = –25°C Vin, INPUT VOLTAGE (VOLTS) 10 Figure 4. Output Capcitance VO = 0.2 V TA = –25°C 25°C 75°C 1 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 9 10 0.001 0.1 0 Vin, INPUT VOLTAGE (VOLTS) 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 5. Output Current vs. Input Voltage Figure 6. Input Voltage vs. Output Current MMUN2211S–4/11 LESHAN RADIO COMPANY, LTD. MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212LT1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = –25°C 25°C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75°C 0.1 75°C 100 25°C –25°C 0.01 – 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) vs. IC 4 Cob, CAPACITANCE (pF) f = 1 MHz lE = 0 A TA = 25°C IC, COLLECTOR CURRENT (mA) 100 Figure 8. DC Current Gain 75°C 25°C TA = –25°C 3 10 1 2 0.1 1 0.01 VO = 5 V 0 2 4 6 8 10 Vin, INPUT VOLTAGE (VOLTS) 0 0 10 20 30 40 50 0.001 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V Figure 10. Output Current vs. Input Voltage TA = –25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current MMUN2211S–5/11 LESHAN RADIO COMPANY, LTD. MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213LT1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = –25°C 25°C 75°C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75°C 25°C –25°C 1 100 0.1 0.01 0 20 40 60 80 IC, COLLECTOR CURRENT (mA) 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) vs. IC 1 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25°C 100 Figure 13. DC Current Gain 75°C 10 25°C TA = –25°C Cob, CAPACITANCE (pF) 0.8 0.6 1 0.4 0.1 0.2 0.01 VO = 5 V 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 0 0 10 20 30 40 50 0.001 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V Figure 15. Output Current vs. Input Voltage TA = –25°C 25°C 75°C 10 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage vs. Output Current MMUN2211S–6/11 LESHAN RADIO COMPANY, LTD. MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214LT1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1 IC/IB = 10 TA = –25°C 25°C 0.1 75°C 300 VCE = 10 250 25°C 200 150 100 50 0 –25°C TA = 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) vs. IC 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) f = 1 MHz lE = 0 A TA = 25°C IC, COLLECTOR CURRENT (mA) 100 Figure 18. DC Current Gain 75°C 25°C TA = –25°C 10 VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 Figure 19. Output Capacitance 10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Figure 20. Output Current vs. Input Voltage TA = –25°C 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage vs. Output Current MMUN2211S–7/11 LESHAN RADIO COMPANY, LTD. MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2232LT1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) IC/IB =10 hFE, DC CURRENT GAIN TA = 75°C 100 –25°C 25°C 1000 VCE = 10 V 0.1 TA = 75°C 25°C –25°C 0.01 10 0.001 4 8 12 16 20 24 28 IC, COLLECTOR CURRENT (mA) 1 0 25 50 75 100 125 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) vs. IC 6 IC, COLLECTOR CURRENT (mA) 5 4 3 2 1 0 0 10 20 30 40 50 60 VR, REVERSE BIAS VOLTAGE (VOLTS) f = 1 MHz IE = 0 A TA = 25°C 100 75°C 10 Figure 23. DC Current Gain VO = 5 V 25°C Cob, CAPACITANCE (pF) 1 TA = –25°C 0.1 0.01 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 24. Output Capacitance 10 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = –25°C 75°C 1 25°C Figure 25. Output Current vs. Input Voltage 0.1 0 10 20 IC, COLLECTOR CURRENT (mA) 30 Figure 26. Output Voltage vs. Input Current MMUN2211S–8/11 LESHAN RADIO COMPANY, LTD. MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2233LT1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) IC/IB = 10 hFE, DC CURRENT GAIN 75°C 25°C TA = –25°C 1000 0.1 75°C 25°C TA = –25°C 100 0.01 10 VCE = 10 V 1 2 7 12 17 22 27 32 1 10 IC, COLLECTOR CURRENT (mA) 100 IC, COLLECTOR CURRENT (mA) 0.001 Figure 27. VCE(sat) vs. IC 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 60 VR, REVERSE BIAS VOLTAGE (VOLTS) f = 1 MHz IE = 0 A TA = 25°C 100 IC, COLLECTOR CURRENT (mA) 75°C Figure 28. DC Current Gain TA = –25°C 10 1 0.1 25°C 0 2 4 6 VO = 5 V 8 0.01 Vin, INPUT VOLTAGE (VOLTS) Figure 29. Output Capacitance 10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Figure 30. Output Current vs. Input Voltage TA = –25°C 25°C 1 75°C 0.1 0 12 18 6 24 IC, COLLECTOR CURRENT (mA) 30 Figure 31. Input Voltage vs. Output Current MMUN2211S–9/11 LESHAN RADIO COMPANY, LTD. MMUN2211LT1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM µP OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source MMUN2211S–10/11