MMVL109T1

LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode MMVL109T1 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. 26–32 pF VOLTAGEVARIABLE CAPACITANCE DIODES 1 • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Surface Mount Package • Device Marking: 4A 2 PLASTIC, CASE 477 SOD– 323 ORDERING INFORMATION Device MMVL109T1 Package SOD–323 Shipping 3000 / Tape & Reel 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Value 30 200 Max 200 1.57 635 -55 to +150 Unit Vdc mAdc Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg *FR–5 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — — 300 0.1 — µAdc ppm/°C (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 50 MHz Device Min Nom Max Min MMVL109T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. CR, Capacitance Ratio C3/C25 f = 1.0 MHz(Note 1) Min Max 5.0 6.5 MMVL109T1–1/2 LESHAN RADIO COMPANY, LTD. MMVL109T1 TYPICAL CHARACTERISTICS 40 36 Q, FIGURE OF MERIT 32 CT , CAPACITANCE – pF 28 24 20 16 12 8 4 0 1 3 10 30 100 f = 1.0 MHz TA = 25°C 1000 VR = 3 Vdc TA = 25°C 100 10 10 100 f, FREQUENCY (MHz) 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 1. DIODE CAPACITANCE Figure 2. FIGURE OF MERIT C t , DIODE CAPACITANCE (NORMALIZED) 100 60 I R , REVERSE CURRENT (nA) 20 10 6.0 2.0 1.0 0.6 0.2 0.1 0.06 VR = 20 Vdc 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 –25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz Ct Cc + Cj [ 0.02 0.01 0.006 –40 –20 0 +20 +40 +60 +80 +100 +120 +140 0.002 0.001 –60 TA, AMBIENT TEMPERATURE TA, AMBIENT TEMPERATURE Figure 3. LEAKAGE CURRENT Figure 4. DIODE CAPACITANCE NOTES ON TESTING AND SPECIFICATIONS 1. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc. MMVL109T1–2/2