MMVL2101T1

LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. MMVL2101T1 30 VOLTS VOLTAGEVARIABLE CAPACITANCEDIODE 1 • High Q • Controlled and Uniform Tuning Ratio • Standard Capacitance Tolerance – 10% • Complete Typical Design Curves • Device Marking: 4G ORDERING INFORMATION Device MMVL2101T1 Package SOD–323 Shipping 3000 / Tape & Reel 2 PLASTIC, CASE 477 SOD– 323 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 30 200 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — — 280 0.1 — µAdc ppm/°C (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Device MMVL2101T1 Ct, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Min Nom Max 6.1 6.8 7.5450 Q, Figure of Merit VR = 4.0 Vdc f = 50 MHz Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Min Max 2.7 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (C T = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 2. TR, TUNING RATIO TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. 3. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q =2πfC/G (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length = 1/16”. 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = –65°C with C T at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85°C in the following equation, which defines TCC: CT(+85°C) – CT(–65°C) 1 06 TCC = • 85+65 CT(25°C) Accuracy limited by measurement of CT to ±0.1 pF. MMVL2101T1–1/2 LESHAN RADIO COMPANY, LTD. MMVL2101T1 TYPICAL DEVICE CHARACTERISTICS CT, DIODE CAPACITANCE (pF) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage NORMALIZED DIODE CAPACITANCE I R, REVERSE CURRENT (nA) TJ, JUNCTION TEMPERATURE (°C) Figure 2. Normalized Diode Capacitance versus Junction Temperature VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Current versus Reverse Bias Voltage Q, FIGURE OF MERIT VR, REVERSE VOLTAGE (VOLTS) Figure 4. Figure of Merit versus Reverse Voltage Q, FIGURE OF MERIT f, FREQUENCY (MHz) Figure 5. Figure of Merit versus Frequency MMVL2101T1–2/2