MMVL3102T1

LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL3102T1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. 22 pF (Nominal) 30 VOLTS VOLTAGEVARIABLE CAPACITANCEDIODE 1 • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Device Marking: 4C 1 CATHODE 2 ANODE 2 PLASTIC, CASE 477 SOD– 323 ORDERING INFORMATION Device MMVL3102T1 Package SOD–323 Shipping 3000 / Tape & Reel MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 30 200 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (I R = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — — 300 0.1 — µAdc ppm/°C (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Device MMVL3102T1 Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Min Nom Max 20 22 25 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz Min 200 CR, Capacitance Ratio C3/C25 f = 1.0 MHz Min Max 4.5 4.8 MMVL3102T1–1/2 LESHAN RADIO COMPANY, LTD. MMVL3102T1 TYPICAL CHARACTERISTICS 40 CT , DIODE CAPACITANCE (pF) 32 28 24 20 16 12 8.0 4.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 f = 1.0 MHz TA = 25°C Q, FIGURE OF MERIT (x 1000) 36 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 TA = 25°C f = 50 MHz 0 3.0 6.0 9.0 12 15 18 21 24 27 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit C T , DIODE CAPACITANCE (NORMALIZED) 100 I R , REVERSE CURRENT (nA) 10 VR = 20 Vdc 1.0 0.1 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz 0.01 0.001 -60 -20 0 +20 +60 +100 +140 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Leakage Current Figure 4. Diode Capacitance NOTES ON TESTING AND SPECIFICATIONS 1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc. MMVL3102T1–2/2