MSC3130

LESHAN RADIO COMPANY, LTD. NPN RF Amplifier Transistor Surface Mount COLLECTOR 3 MSC3130T1 3 2 1 2 BASE 1 EMITTER CASE 318D–03, STYLE 1 SC–59 MAXIMUM RATINGS (T A = 25 °C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V CBO V CEO V EBO IC Symbol PD TJ T stg Value 15 10 3.0 50 Max 200 150 –55 ~ +150 Symbol I CBO V CEO V EBO Unit Vdc Vdc Vdc mAdc Unit mW °C °C Min — 10 3.0 75 — 1.4 Max 1.0 — — 400 0.5 2.5 Unit µ Adc Vdc Vdc — Vdc GHz THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Characteristic Collector Cutoff Current (V CB = 10 Vdc, I E = 0) Collector-Emitter Breakdown Voltage (I C = 2.0 mAdc, I B = 0) Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0) DC Current Gain (1) (V CE = 4.0 Vdc, I C = 5.0 mAdc) Collector-Emitter Saturation Voltage (I C = 20 mAdc, I B = 4.0 mAdc) Current-Gain–Bandwidth Produc (V CB = 4.0 Vdc, I E = -5.0 mAdc) 1. Pulse Test: Pulse Width < 300 µs, D.C.