LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: Class 1 ESD Rating – Machine Model: Class B • The SC–59 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel.
MUN2211T1 SERIES
NPN SILICON BIAS RESISTOR TRANSISTORS
3
2 1
SC–59 CASE 318D, STYLE 1
PIN 2 BASE (INPUT)
R1
PIN 3 COLLECTOR (OUTPUT)
R2
PIN 1 EMITTER (GROUND)
MARKINGDIAGRAM
DEVICE MARKING INFORMATION
*See specific marking information in the device marking table on page 2 of this data sheet.
8X
M
MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Total Device Dissipation PD 230(Note 1) TA = 25°C 338(Note 2) Derate above 25°C 1.8 (Note 1) 2.7 (Note 2) Thermal Resistance – RθJA 540(Note 1) Junction-to-Ambient 370(Note 2) Thermal Resistance – RθJL 264(Note 1) Junction-to-Lead 287(Note 2) Junction and Storage TJ, Tstg –55 to +150 Temperature Range 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
8X = Specific Device Code* M = Date Code
Unit mW °C/W °C/W °C/W °C
MUN2211T1 Series–1/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 (Note 3) MUN2216T1 (Note 3) MUN2230T1 (Note 3) MUN2231T1 (Note 3) MUN2232T1 (Note 3) MUN2233T1 (Note 3) MUN2234T1 (Note 3) MUN2236T1 MUN2237T1 MUN2240T1 (Note 3) MUN2241T1 (Note 3) Package SC–59 SC–59 SC–59 SC–59 SC–59 SC–59 SC–59 SC–59 SC–59 SC–59 SC–59 SC–59 SC–59 SC–59 SC–59 Marking 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 8N 8P 8T 8U R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 47 100 R2 (K) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 100 22 ∞ ∞ Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
MUN2211T1 Series–2/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 ICBO ICEO IEBO – – – – – – – – – – – – – – – – – 50 50 – – – – – – – – – – – – – – – – – – – 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 – – nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 – 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 – – – – – – – – – – – – – – – – 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1 (IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/ MUN2232T1/MUN2233T1/MUN2234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN2211T1 MUN2212T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2213T1 MUN2240T1 MUN2236T1 MUN2237T1 MUN2241T1
VCE(sat)
VOL – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kΩ)
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
MUN2211T1 Series–3/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN2230T1 MUN2215T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN2216T1 MUN2233T1 MUN2240T1 Input Resistor MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2235T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 MUN2211T1/MUN2212T1/MUN2213T1/ MUN2236T1 MUN2214T1 MUN2215T1/MUN2216T1/MUN2240T1/ MUN2241T1 MUN2230T1/MUN2231T1/MUN2232T1 MUN2233T1 MUN2234T1 MUN2237T1 VOH 4.9 – – Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 70 32.9 70 0.8 0.17 – 0.8 0.055 0.38 1.7
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 100 47 100 1.0 0.21 – 1.0 0.1 0.47 2.1
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 130 61.1 100 1.2 0.25 – 1.2 0.185 0.56 2.6
kΩ
Resistor Ratio
R1/R2
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 –50 RθJA = 370°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150
Figure 1. Derating Curve
MUN2211T1 Series–4/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2211T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25°C 25°C 75°C 1000 VCE = 10 V TA = 75°C 25°C -25°C 100
0.1
0.01
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4 f = 1 MHz IE = 0 V TA = 25°C
100 75°C IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01
25°C TA = -25°C
Cob , CAPACITANCE (pF)
3
2
1
VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS)
TA = -25°C 25°C 75°C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
MUN2211T1 Series–5/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2212T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25°C 25°C 0.1 75°C hFE , DC CURRENT GAIN 1000 VCE = 10 V TA = 75°C 25°C -25°C 100
0.01
0.001
0
40 20 60 IC, COLLECTOR CURRENT (mA)
80
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4 f = 1 MHz IE = 0 V TA = 25°C
100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01
75°C
25°C TA = -25°C
Cob , CAPACITANCE (pF)
3
2
1
0
0
10
20
30
40
50
0.001
VO = 5 V 0 2 4 6 8 10 Vin, INPUT VOLTAGE (VOLTS)
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 75°C 25°C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
MUN2211T1 Series–6/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2213T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 1000 VCE = 10 V 75°C hFE , DC CURRENT GAIN TA = 75°C 25°C -25°C 100
IC/IB = 10
TA = -25°C 25°C
1
0.1
0.01
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz IE = 0 V TA = 25°C
100 10 1 0.1
75°C
25°C TA = -25°C
IC, COLLECTOR CURRENT (mA)
0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V TA = -25°C 25°C 75°C
V in , INPUT VOLTAGE (VOLTS)
10
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
MUN2211T1 Series–7/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2214T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25°C hFE, DC CURRENT GAIN 25°C 0.1 75°C 0.01 300 250 200 150 100 50 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75°C 25°C -25°C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C
100 75°C IC, COLLECTOR CURRENT (mA) 25°C
TA = -25°C 10
VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10 VO= 0.2 V V in , INPUT VOLTAGE (VOLTS)
TA = -25°C
25°C 75°C 1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
MUN2211T1 Series–8/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2236T1
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = –25°C 25°C 75°C 0.1 1000 VCE = 10 V 75°C TA = –25°C 25°C
100
0.01 0 5 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 40
10
0.1
10 1 IC, COLLECTOR CURRENT (mA)
100
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
5 4.5 Cob, CAPACITANCE (pF) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 f = 1 MHz lE = 0 V TA = 25°C
100 IC, COLLECTOR CURRENT (mA)
75°C TA = –25°C
10
25°C
1 VO = 5 V
0.1 0 5 10 15 20 25 30 Vin, INPUT VOLTAGE (VOLTS) 35 40
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = –25°C
25°C 75°C
10
1
0.1 0 5 15 25 10 20 IC, COLLECTOR CURRENT (mA) 30 35
Figure 26. Input Voltage versus Output Current
MUN2211T1 Series–9/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2237T1
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = –25°C 25°C 75°C 0.1 1000 VCE = 10 V 75°C 100 TA = –25°C 25°C
10
0.01 0 5 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 40
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
2 1.8 Cob, CAPACITANCE (pF) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 f = 1 MHz lE = 0 V TA = 25°C 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 IC, COLLECTOR CURRENT (mA)
100
75°C TA = –25°C 25°C
10
1
0.1
0.01
VO = 5 V 0 2 4 6 8 10 12 Vin, INPUT VOLTAGE (VOLTS) 14 16
0.001
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = –25°C 25°C 10 75°C
1 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 40
Figure 31. Input Voltage versus Output Current
MUN2211T1 Series–10/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED LOAD
FROM µP OR OTHER LOGIC
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT IN LOAD
Figure 33. Open Collector Inverter: Inverts the Input Signal
Figure 34. Inexpensive, Unregulated Current Source
MUN2211T1 Series–11/11