MUN5135DW1T1

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low–power surface mount applications where board space is at a premium. . Simplifies Circuit Design . Reduces Board Space . Reduces Component Count . Available in 8 mm, 7 inch/3000 Unit Tape and Reel MUN5111DW1T1 Series 6 5 4 1 2 3 SOT-363 CASE 419B STYLE1 6 5 4 MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO –50 Vdc Collector-Emitter Voltage V CEO –50 Vdc Collector Current IC –100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation PD 187 (Note 1.) mW 256 (Note 2.) T A = 25°C 1.5 (Note 1.) mW/°C Derate above 25°C 2.0 (Note 2.) Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature 1. FR–4 @ Minimum Pad R θJA 670 (Note 1.) 490 (Note 2.) °C/W Q2 R2 R1 1 2 R1 R2 Q1 3 MARKING DIAGRAM 6 5 4 XX 1 2 3 xx = Device Marking = (See Page 2) Symbol PD Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) –55 to +150 Unit mW mW/°C °C/W °C/W °C DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. R θJA R θJL T J , T stg 2. FR–4 @ 1.0 x 1.0 inch Pad MUN5111dw–1/11 LESHAN RADIO COMPANY, LTD. MUN5111DW1T1 DEVICE MARKING AND RESISTOR VALUES Device Package Marking R 1(K) R 2(K) MUN5111DW1T1 SOT–363 0A 10 10 MUN5112DW1T1 SOT–363 0B 22 22 MUN5113DW1T1 SOT–363 0C 47 47 MUN5114DW1T1 SOT–363 0D 10 47 MUN5115DW1T1 (Note 3.) SOT–363 0E 10 – MUN5116DW1T1 (Note 3.) SOT–363 0F 4.7 – MUN5130DW1T1 (Note 3.) SOT–363 0G 1.0 1.0 MUN5131DW1T1 (Note 3.) SOT–363 0H 2.2 2.2 MUN5132DW1T1 (Note 3.) SOT–363 0J 4.7 4.7 MUN5133DW1T1 (Note 3.) SOT–363 0K 4.7 47 MUN5134DW1T1 (Note 3.) SOT–363 0L 22 47 MUN5135DW1T1 (Note 3.) SOT–363 0M 2.2 47 MUN5136DW1T1 (Note 3.) SOT–363 0N 100 100 MUN5137DW1T1 (Note 3.) SOT–363 0P 47 22 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Characteristic Symbol Min Typ OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = –50 V, I E = 0) I CBO – – Collector-Emitter Cutoff Current (V CE = –50 V, I B = 0) I CEO – – I EBO – – Emitter-Base Cutoff Current MUN5111DW1T1 – – (V EB = –6.0 V, I C = 0) MUN5112DW1T1 – – MUN5113DW1T1 – – MUN5114DW1T1 – – MUN5115DW1T1 – – MUN5116DW1T1 – – MUN5130DW1T1 – – MUN5131DW1T1 – – MUN5132DW1T1 – – MUN5133DW1T1 – – MUN5134DW1T1 – – MUN5135DW1T1 – – MUN5136DW1T1 – – MUN5137DW1T1 Collector-Base Breakdown Voltage (I C = –10 µA, I E = 0) V (BR)CBO –50 – Collector-Emitter Breakdown Voltage(Note 4.)(IC = –2.0 mA,I B=0) V (BR)CEO –50 – ON CHARACTERISTICS (Note 4.) Collector-Emitter Saturation Voltage (IC= –10mA,IE= –0.3 mA) (I C= –10mA, I B= –5mA) (I C= –10mA, IB= –1mA) MUN5130DW1T1/MUN5131DW1T1 MUN5115DW1T1/MUN5116DW1T1 V CE(sat) – – Series Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel Max Unit –100 nAdc –500 nAdc –0.5 mAdc –0.2 –0.1 –0.2 –0.9 –1.9 –4.3 –2.3 –1.5 –0.18 –0.13 –0.2 –0.05 –0.13 – Vdc – Vdc –0.25 Vdc MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% MUN5111dw–2/11 LESHAN RADIO COMPANY, LTD. MUN5111DW1T1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) Characteristic Symbol ON CHARACTERISTICS(Note 5.) h FE DC Current Gain MUN5111DW1T1 (V CE = –10 V, I C = –5.0 mA) MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5135DW1T1 MUN5135DW1T1 Output Voltage (on) V OL (V CC = –5.0 V, V B = –2.5 V, R L = 1.0 kΩ) MUN5111DW1T1 MUN5112DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 (V CC = –5.0 V, V B = –3.5 V, R L = 1.0 kΩ) MUN5113DW1T1 (V CC = –5.0 V, V B = –5.5 V, R L = 1.0 kΩ) MUN5136DW1T1 (V CC = –5.0 V, V B = –4.0 V, R L = 1.0 kΩ) MUN5137DW1T1 V OH Output Voltage (off) (V CC = –5.0 V, V B = –0.5 V, R L = 1.0 kΩ) (V CC = –5.0 V, V B = –0.05 V, R L = 1.0 kΩ) MUN5130DW1T1 (V CC = –5.0 V, V B = –0.25 V, R L = 1.0 kΩ) MUN5115DW1T1 MUN5116DW1T1 MUN5131DW1T1 MUN5133DW1T1 Series (Continued) Min Typ 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 – – – – – – – – – – – – – – –4.9 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 – – – – – – – – – – – – – – – Max – – – – – – – – – – – – – – Unit Vdc –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 – Vdc MUN5111dw–3/11 LESHAN RADIO COMPANY, LTD. MUN5111DW1T1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued) Characteristic Symbol Min Typ ON CHARACTERISTICS(Note 5.) Input Resistor MUN5111DW1T1 R1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 MUN5111DW1T1/MUN5112DW1T1/ R 1 /R 2 MUN5113DW1T1/MUN5136DW1T1 MUN5114DW1T1 MUN5115DW1T1/MUN5116DW1T1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 – 0.8 0.055 0.38 0.038 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 – 1.0 0.1 0.47 0.047 2.1 Series Max 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 – 1.2 0.185 0.56 0.056 2.6 Unit kΩ Resistor Ratio MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5137DW1T1 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 300 P D , POWER DISSIPATION (mW) 250 200 150 100 50 0 –50 0 50 100 150 T A , AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve MUN5111dw–4/11 LESHAN RADIO COMPANY, LTD. MUN5111DW1T1 TYPICAL ELECTRICAL CHARACTERISTICS – MUN5111DW1T1 V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) Series 1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 0.1 100 0.01 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 2. V CE(sat) versus I C 4 100 Figure 3. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 3 1 2 0.1 1 0.01 0 0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 4. Output Capacitance 100 Figure 5. Output Current versus Input Voltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current MUN5111dw–5/11 LESHAN RADIO COMPANY, LTD. MUN5111DW1T1 TYPICAL ELECTRICAL CHARACTERISTICS – MUN5112DW1T1 V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) Series 10 1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 0.1 0.01 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C 4 100 I C , COLLECTOR CURRENT (mA) Figure 8. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 3 1 2 0.1 1 0.01 0.001 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance 100 Figure 10. Output Current versus Input voltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current MUN5111dw–6/11 LESHAN RADIO COMPANY, LTD. MUN5111DW1T1 TYPICAL ELECTRICAL CHARACTERISTICS – MUN5113DW1T1 V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) Series 1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 0.1 100 0.01 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 12. V CE(sat) versus I C 1 100 Figure 13. DC Current Gain 0.8 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 0.6 1 0.4 0.1 0.2 0.01 0 0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance 100 Figure 15. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current MUN5111dw–7/11 LESHAN RADIO COMPANY, LTD. MUN5111DW1T1 TYPICAL ELECTRICAL CHARACTERISTICS – MUN5114DW1T1 V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) Series 1 h FE , DC CURRENT GAIN (NORMALIZED) 180 160 140 120 100 80 60 40 20 0 1 2 3 4 5 10 15 20 40 50 60 70 80 90 100 0.1 0.01 0.001 0 20 40 60 80 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C 100 Figure 18. DC Current Gain 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 1 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance 10 Figure 20. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current MUN5111dw–8/11 LESHAN RADIO COMPANY, LTD. MUN5311DW1T1 TYPICAL ELECTRICAL CHARACTERISTICS – MUN5115DW1T1 Series h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 1 10 100 I C , COLLECTOR CURRENT (mA) Figure 22. DC Current Gain TYPICAL ELECTRICAL CHARACTERISTICS – MUN5116DW1T1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 1 10 100 I C , COLLECTOR CURRENT (mA) Figure 23. DC Current Gain MUN5111dw–9/11 LESHAN RADIO COMPANY, LTD. MUN5111DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS – MUN5136DW1T1 V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 0.1 10 0.01 0 1 2 3 4 5 6 7 1 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 24. Maximum Collector Voltage versus Collector Current 100 Figure 25. DC Current Gain 1.2 C ob CAPACITANCE (pF) 1.0 I C , COLLECTOR CURRENT (mA) 0.8 10 0.6 0.4 1 0.2 0 0 10 20 30 40 50 60 0.1 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 26. Output Capacitance 100 Figure 27. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0 2 4 6 8 10 12 14 16 18 20 I C , COLLECTOR CURRENT (mA) Figure 28. Input Voltage versus Output Current MUN5111dw–10/11 LESHAN RADIO COMPANY, LTD. MUN5111DW1T1 TYPICAL ELECTRICAL CHARACTERISTICS – MUN5137DW1T1 V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) Series 1 0.1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 0.01 0 5 10 15 20 25 30 35 40 45 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 29. Maximum Collector Voltage versus Collector Current 100 Figure 30. DC Current Gain I C , COLLECTOR CURRENT (mA) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 C ob CAPACITANCE (pF) 10 1 0.1 0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 11 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 31. Output Capacitance 100 Figure 32. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0 5 10 15 20 25 I C , COLLECTOR CURRENT (mA) Figure 33. Input Voltage versus Output Current MUN5111dw–11/11