MV409

LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed forgeneral frequency control and tuning applications. They provide solid- state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Available in Surface Mount Package MMBV409LT1 MV409 VOLTAGE VARIABLE CAPACITANCE DIODES 3 3 CATHODE 1 ANODE 1 2 CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD 280 2.8 TJ Tstg +125 –55 to +150 225 1.8 mW mW/°C °C °C MBV409 20 200 MMBV409LT1 20 200 Unit Vdc mAdc DEVICE MARKING MMBV409LT1 = X5, MV409 = MV409 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 — — Typ — — 300 Max — 0.1 — Unit Vdc µAdc ppm/°C Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV409LT1, MV409 Min 26 Nom 29 Max 32 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz Min 200 CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min 1.5 Max 1.9 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. LESHAN RADIO COMPANY, LTD. MMBV409LT1 MV409 TYPICAL CHARACTERISTICS 40 1000 C T , DIODE CAPACITANCE (pF) Q , FIGURE OF MERIT 32 24 f = 1 .0MHz TA = 25°C V R = 3Vdc T A = 25°C 100 16 8 0 1 2 3 10 20 30 100 10 10 100 1000 V R , REVERSE VOLTAGE (VOLTS) f , FREQUENCY ( MHz ) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT,DIODECAPACITANCE(NORMALIZED) , REVERSE CURRENT ( nA ) 100 60 20 10 6.0 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 0.002 0.001 –60 –40 –20 0 +20 +40 +60 +80 +100 +120 +140 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 –25 0 +25 +50 +75 +100 +125 V R= 3.0Vdc f = 1 .0MHz V R= 15Vdc I R T A , AMBIENT TEMPERATURE (°C) T A , AMBIENT TEMPERATURE (°C) Figure 3. Leakage Current Figure 4. Diode Capacitance MMBV409–2/2