S-LBAS16HT1G

LBAS16HT1G S-LBAS16HT1G Switching Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOD323(SC-76) qualified and PPAP capable. ● Small plastic SMD package ● High-speed switching in hybrid thick and thin-film circuits. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS16HT1G A6 3000/Tape&Reel LBAS16HT3G A6 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit VR 75 V IF 200 mA IFRM 500 mA Current ;Tj=25°C prior to surge t=1μs 5 A t=1ms 1 A Parameter DC Reverse Voltage Peak Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge IFSM 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Symbol Unit 200 mW PD FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Limits 1.57 mW/ºC RΘJA 635 ºC/W TJ,Tstg −55∼+150 ºC Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.E Dec. 2017 1/4 LBAS16HT1G, S-LBAS16HT1G Switching Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Reverse Breakdown Voltage (I(BR)=100μA) Forward Voltage Symbol VBR Min. Typ. Max. 75 - - VF mV (IF = 1.0 mAdc) - - 715 (IF = 10 mAdc) - - 855 (IF = 50 mAdc) - - 1000 (IF = 150 mAdc) - - 1250 Reverse Voltage Leakage Current μA IR (VR = 75Vdc) - - 1.0 (VR = 75Vdc,TJ = 150°C) - - 50 (VR = 25Vdc,TJ = 150°C) - - 30 Diode Capacitance (VR = 0V, f = 1.0 MHz) Reverse Recovery Time (IF=IR=10mAd,RL =50Ω ) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) Leshan Radio Company, LTD. CD trr VFR Rev.E Dec. 2017 Unit V pF - - 2.0 ns - - 4.0 V - - 1.75 2/4 LBAS16HT1G, S-LBAS16HT1G Switching Diode 6.ELECTRICAL CHARACTERISTICS CURVES 1000 1000 150℃ 100 100 85℃ IR,Reverse Current(uA) IF, Forward Current(mA) 150℃ 25℃ 10 -55℃ 85℃ 10 1 25℃ 0.1 1 -55℃ 0.01 0.001 0.1 0 0.2 0.4 0.6 0.8 VF, Forward Voltage(V) 1 1.2 0 20 40 60 80 VR, Reverse Voltage(V) 100 Reverse Characteristics Forward Characteristics 0.6 f=1MHz C,Capacitor(pF) 0.5 0.4 0.3 0.2 0.1 0 0 10 20 30 40 VR, Reverse Voltage(V) 50 Capacitor Characteristics Leshan Radio Company, LTD. Rev.E Dec. 2017 3/4 LBAS16HT1G, S-LBAS16HT1G Switching Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN 0.8 0.9 1 A1 0 0.05 0.1 A3 NOM MAX MIN NOM MAX 0.031 0.035 0.04 0 0.15REF 0.002 0.004 0.006REF b 0.25 0.32 C 0.089 0.12 D 1.6 1.7 1.8 0.062 0.066 E 1.15 1.25 1.35 0.045 0.049 0.053 L HE 0.08 2.3 0.4 0.01 0.012 0.016 0.177 0.003 0.005 0.007 0.07 0.003 2.5 2.7 0.09 0.098 0.105 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.E Dec. 2017 4/4