S-LBAS316T1G

LBAS316T1G S-LBAS316T1G High-speed Diode 1. FEATURES ● We declare that the material of product compliance with SOD323(SC-76) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● Ultra small plastic SMD package ● High switching speed: max. 4 ns ● Continuous reverse voltage: max. 100 V ● Repetitive peak reverse voltage: max. 100 V ● Repetitive peak forward current: max. 500 mA. 2. APPLICATIONS ● High-speed switching diode fabricated in planar technology. 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS316T1G Z 9 Z 9 10000/Tape&Reel LBAS316T3G 3000/Tape&Reel 4. MAXIMUM RATINGS(In accordance with the Absolute Maximum Rating System IEC134) Parameter repetitive peak reverse voltage continuous reverse voltage RMS reverse voltage continuous forward current repetitive peak forward current Symbol VRRM Limit 100 Unit V VR 100 V VR(RMS) 70 V IF 250 mA IFRM 500 mA 5 A 1 A non-repetitive peak forward current(square wave; Tj=25°C prior to surge) (t =1µs) IFSM (t =1ms ) 0.5 A total power dissipation Ptot 200 mW storage temperature Tstg ℃ junction temperature Tj -55~+150 150 (t =1s) ℃ 5. THERMAL CHARACTERISTICS Parameter Symbol Rθj a Thermal resistance junction to ambient air Leshan Radio Company, LTD. Rev.A Dec. 2021 Max Unit 625 ℃/W 1/4 LBAS316T1G,S-LBAS316T1G High-speed Diode 6. ELECTRICAL CHARACTERISTICS (Tj =25°C unless otherwise specified.) Parameter Symbol MIN MAX Unit - 715 mV - 855 (IF= 50mA) - 1 mV V (IF= 150mA) - 1.25 V - 30 nA - 1 µA (VR = 25 V,Tj = 150°C) - 30 µA (VR = 75 V,Tj = 150°C) - 50 µA Cd - 2 pF trr - 4 nS Vfr - 1.75 V Forward Voltage (IF= 1mA) VF (IF= 10mA) Reverse Current (VR = 25 V) IR (VR = 75 V) Diode Capacitance (f=1MHz, VR = 0) Reverse Recovery Time (When switched from IF=10mA to IR = 10mA;RL=100Ohm; measured at IR = 1mA) Forward Recovery Voltage (when switched from IF=10mA; tr=20 ns) Leshan Radio Company, LTD. Rev.A Dec. 2021 2/4 LBAS316T1G,S-LBAS316T1G High-speed Diode 7.ELECTRICAL CHARACTERISTICS CURVES 1E-01 1E-04 150℃ IR,Reverse Current(A) IF,Forward Current(A) 1E-05 1E-02 150℃ 85℃ 1E-03 1E-06 85℃ 1E-07 25℃ 1E-08 -55℃ 25℃ -55℃ 1E-09 1E-10 1E-04 0 0.2 0.4 0.6 0.8 VF,Forward Voltage(V) 1 1.2 0 IF vs. VF 20 40 60 VR,Reverse Voltage(V) 80 IR vs. VR 500 450 CT,Capacitor(fF) 400 350 300 250 200 150 f=1MHz Ta=25℃ 100 50 0 0 5 10 VR,Reverse Voltage(V) 15 Capacitance Leshan Radio Company, LTD. Rev.A Dec. 2021 3/4 LBAS316T1G,S-LBAS316T1G High-speed Diode 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN 0.8 0.9 1 A1 0 0.05 0.1 A3 NOM MAX MIN NOM MAX 0.031 0.035 0.04 0 0.15REF 0.002 0.004 0.006REF b 0.25 0.32 C 0.089 0.12 D 1.6 1.7 1.8 0.062 0.066 E 1.15 1.25 1.35 0.045 0.049 0.053 L HE 0.08 2.3 0.4 0.01 0.012 0.016 0.177 0.003 0.005 0.007 0.07 0.003 2.5 2.7 0.09 0.098 0.105 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A Dec. 2021 4/4 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.