S-LBAW56LT1G

LBAW56LT1G S-LBAW56LT1G Monolithic Dual Switching Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAW56LT1G A1 3000/Tape&Reel LBAW56LT3G A1 10000/Tape&Reel 3 ANODE 1 CATHODE 2 CATHODE 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Symbol Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/ºC 556 ºC/W 300 mW 2.4 mW/ºC RΘJA 417 ºC/W TJ,Tstg −55∼+150 ºC Parameter Peak Forward Surge Current 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Thermal Resistance, PD RΘJA Junction–to–Ambient Total Device Dissipation, PD Alumina Substrate (Note 2) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient Junction and Storage Temperature 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Leshan Radio Company, LTD. Rev.A Apr. 2018 1/4 LBAW56LT1G, S-LBAW56LT1G Monolithic Dual Switching Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Reverse Breakdown Voltage VBR (I(BR)=100μA) Min. Typ. Max. 70 - - Unit V mV Forward Voltage (IF = 1.0 mA) - - 715 - - 855 (IF = 50 mA) - - 1000 (IF = 150 mA) - - 1250 VF (IF = 10 mA) μA Reverse Voltage Leakage Current (VR = 70V) IR (VR = 70V,TJ = 150°C) (VR = 25V,TJ = 150°C) Diode Capacitance Reverse Recovery Time (IF=IR = 10 mA, IR(REC) = 1.0 mA,RL = 100Ω) - 2.5 - - 50 - - 30 pF CD (VR = 0V, f = 1.0 MHz) - - - 2.0 ns trr - - 6.0 820 Ω +10 V 2k 100 µH 0.1 µF tp tr IF 0.1 µF t IF trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit Leshan Radio Company, LTD. Rev.A Apr. 2018 2/4 LBAW56LT1G, S-LBAW56LT1G Monolithic Dual Switching Diode 6.ELECTRICAL CHARACTERISTICS CURVES 1 1.00E-04 150℃ 0.1 85℃ 25℃ IR,Reverse Current(A) IF,Forward Current(A) 1.00E-05 150 ℃ -55℃ 0.01 85℃ 1.00E-06 1.00E-07 25℃ 1.00E-08 0.001 -55℃ 1.00E-09 1.00E-10 0.0001 0 0.2 0.4 0.6 0.8 VF,Forward Voltage(V) 1 1.2 0 20 40 60 VR,Reverse Voltage(V) 80 IR vs. VR IF vs. VF 0.7 f=1MHz Ta=25 ℃ 0.65 CT,Capacitor(pF) 0.6 0.55 0.5 0.45 0.4 0.35 0.3 0 10 20 30 40 VR,Reverse Voltage(V) 50 CT vs. VR Leshan Radio Company, LTD. Rev.A Apr. 2018 3/4 LBAW56LT1G, S-LBAW56LT1G Monolithic Dual Switching Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A Apr. 2018 4/4