S-LBTP180Z4TZHG

LBTP180Z4TZHG S-LBTP180Z4TZHG PNP medium power transistors 1. FEATURES ● High current Low voltage ● We declare that the material of product compliance with ● RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring SOT223 unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device LBTP180Z4TZHG Marking PB Shipping 1000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage VCEO -80 Collector–Base Voltage VCBO VEBO -100 -5 V V V Parameter Emitter–Base Voltage Collector Current — Continuous IC -1 A Peak Collector Current ICM -1.5 A Base Current Peak Base Current Junction and Storage temperature IB IBM -0.1 -0.2 −55∼+150 A A TJ,Tstg ºC 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) 1. FR–4 = 30.0mm×25.0mm×1.6mm. Leshan Radio Company, LTD. Symbol Limits Unit PD 833 mW RΘJA 150 ºC/W Rev.F Jul. 2023 1/5 LBTP180Z4TZHG, S-LBTP180Z4TZHG PNP medium power transistors 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Collector–Emitter Breakdown Voltage (IC = -1.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = −100 μA, IE = 0) Emitter–Base Breakdown Voltage (IE = −100 μA, IC = 0) Collector Cutoff Current (IE = 0, VCB = −30 V) Symbol Min. Typ. Max. Unit VBR(CEO) -80 - - V VBR(CBO) -100 - - V VBR(EBO) -5 - - V ICBO - - - - -100 -10 nA µA IEBO - - -100 nA ICEO - - -10 µA 40 100 40 - 250 - VCE(sat) - - -0.5 V VBE(sat) - - -1 V VBE - - -1 V fT - 115 - MHz Cobo - 13.5 - pF Cibo - 85 - pF (IE = 0, VCB = −30 V, Tj = 125 °C) Emitter CutOff Current (IC = 0, VEB = −5 V) Collector-Emitter cutoff Current (VCE= -80V,IB=0) DC Current Gain (IC = -5mA, VCE = -2V) (IC = -150mA, VCE = -2V) (IC = -500mA, VCE = -2V) Collector–Emitter Saturation Voltage (IC = −500 mA, IB = −50 mA) Base–Emitter Saturation Voltage (IC = −500 mA, IB = −50 mA) Base–Emitter Voltage (IC = −500 mA, VCE = −2 V) Transitional Frequency (IC = −10 mA, VCE = −5 V, f = 100 MHz) Output Capacitance (VCB=−5V,IE=0,f=1.0MHz) Input Capacitance (VEB=−0.5V,IC=0,f=1.0MHz) Leshan Radio Company, LTD. HFE Rev.F Jul. 2023 2/5 LBTP180Z4TZHG, S-LBTP180Z4TZHG PNP medium power transistors 6.ELECTRICAL CHARACTERISTICS CURVES 1.0 300 VCE=2V 250 0.8 200 IC(A) HFE 0.6 150 0.4 100 0.2 50 0 0.001 0.0 0.01 Ta=-55℃ 0.1 Ta=25℃ 1 0 Ta=150℃ IC(A) 1 IB=1.0mA IB=4.0mA IB=8.0mA HFE vs. IC 2 3 IB=2.0mA IB=5.0mA IB=10mA VCE(V) 4 5 IB=3.0mA IB=6.0mA IC vs. VCE 1.0 1 VCE=2V 0.8 0.6 IC(A) VCE(V) 0.1 0.4 0.01 0.2 0.0 0.00001 0.001 0.0001 0.001 IC=10mA IC=30mA IC=100mA IC=70mA IC=500mA 0.01 IC=50mA IC=300mA 0.0 0.5 Ta=-55℃ 1.0 Ta=25℃ 1.5 Ta=150℃ VBE(on)(V) VBE(on) vs. IC IB(A) VCE vs. IB Leshan Radio Company, LTD. Rev.F Jul. 2023 3/5 LBTP180Z4TZHG, S-LBTP180Z4TZHG PNP medium power transistors 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.30 1.2 IC/IB=10 0.25 0.8 0.20 VCE(sat)(V) VBE(sat)(V) IC/IB=10 1.0 0.6 0.15 0.4 0.10 0.2 0.05 0.0 0.001 0.01 Ta=-55℃ 0.1 Ta=25℃ 0.00 0.001 1 Ta=150℃ 0.01 Ta=-55℃ 0.1 Ta=25℃ 1 Ta=150℃ IC(A) IC(A) VCE(sat) vs. IC VBE(sat) vs. IC 10 120 f=1.0MHz Ta=25℃ 100 80 IC(A) Capacitance(pF) 1 60 0.1 40 0.01 20 0 0.1 1 10 Cobo 100 0.001 0.1 100 µs Cibo 1ms 10 10ms 100 DC result VCE(V) VR(V) Safe Operating Area Capacitance Leshan Radio Company, LTD. 1 Rev.F Jul. 2023 4/5 LBTP180Z4TZHG, S-LBTP180Z4TZHG PNP medium power transistors 7.OUTLINE AND DIMENSIONS SOT223 D b1 C E HE ɵ1 ɵ1 L1 A2 b2 Gauge Plane Seating Plane L L1 0.25 ɵ e1 e DIM A A1 A2 b1 b2 c D E e e1 HE L L1 θ θ1 SOT223 MIN NOR 1.50 1.60 0.00 0.05 0.80 0.90 2.90 3.02 0.60 0.72 0.20 0.27 6.30 6.50 3.30 3.50 4.60BSC 2.30BSC 6.80 7.00 0.80 1.00 1.75(REF) 0º~8º 8º 10º All Dimensions in mm MAX 1.70 0.10 1.00 3.10 0.80 0.35 6.70 3.70 7.20 1.20 12º A GENERAL NOTES A1 1. Top package surface finish Ra0.4±0.2um 2. Bottom package surface finish Ra0.7±0.2um 3. Side package surface finish Ra0.4±0.2um 4. Protrusion or Gate Burrs shall not exceed 0.10mm per side. 8.SOLDERING FOOTPRINT Y1 X1 C2 DIM X1 Y1 X2 Y2 C1 C2 Y2 X2 SOT223 (mm) 3.80 2.00 1.20 2.00 2.30 6.30 C1 Leshan Radio Company, LTD. C1 Rev.F Jul. 2023 5/5 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.