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S-LMBR160FT1G

S-LMBR160FT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOD-123FL

  • 描述:

    -

  • 数据手册
  • 价格&库存
S-LMBR160FT1G 数据手册
LMBR160FT1G S-LMBR160FT1G Schottky Barrier Diode 1. FEATURES ● Low power losses, high efficiency. ● Guardring for over voltage protection. ● For use in low voltage high frequency inverters, free wheeling,and polarity protection applications ● We declare that the material of product compliance with SOD123FL RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBR160FT1G 16 3000/Tape&Reel S-LMBR160FT1G 16 3000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Maximum repetitive peak reverse voltage Symbol VRRM Limits 60 Unit V VRMS 42 V VDC 60 V IF(AV) 1 A IFSM 30 A PD RθJA RθJL 400 170 40 mW TJ TSTG –55 ~ +150 –65 ~ +175 Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TA = 75°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Power Dissipation Typical thermal resistance (Note 1) Operating junction temperature range storage temperature range ℃/W ℃ ℃ 4. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC) Characteristic Maximum instantaneous forward (IF = 1.0 A, TJ = 25°C) Maximum repetitive peak reverse voltage (IR=500µA) Maximum DC reverse current at rated DC blocking voltage TA = 25°C Tj = 125°C Junction capacitance at 4.0V, 1MHz Junction capacitance at 2.0V, 1MHz Symbol VF VR IR CJ Min Typ. Max - - 0.7 60 - - - 32 40 0.5 10 - Unit V V mA pF Note: 1. 8.0mm²(.013mm thick) land areas Leshan Radio Company, LTD. Rev.E Jun. 2022 1/3 LMBR160FT1G,S-LMBR160FT1G Schottky Barrier Diode 5.ELECTRICAL CHARACTERISTICS CURVES 1.00E-01 10 150℃ 1.00E-02 1.00E-03 IR,Reverse Current(A) IF,Forward Current(A) 1 150℃ 1.00E-04 -55℃ 0.1 85℃ 1.00E-05 25℃ 25℃ 1.00E-06 1.00E-07 0.01 85℃ 1.00E-08 -55℃ 1.00E-09 0.001 0 0.2 0.4 0.6 0.8 VF,Forward Voltage(V) 0 1 10 20 30 40 VR,Reverse Voltage(V) 60 IR vs. VR IF vs. VF 120 1.2 f=1MHz Ta=25℃ 1 IF,Forward Current (A) 100 CT,Capacitor(pF) 50 80 60 40 0.8 0.6 0.4 20 0.2 0 0 0 10 20 30 40 VR,Reverse Voltage(V) 50 0 50 75 100 125 150 175 TC(ºC) IF vs. TC CT vs. VR Leshan Radio Company, LTD. 25 Rev.E Jun. 2022 2/3 LMBR160FT1G,S-LMBR160FT1G Schottky Barrier Diode 6.OUTLINE AND DIMENSIONS SOD123FL DIM MIN NOR MAX A 0.90 1.05 1.15 b 0.75 0.80 0.95 L 0.50 0.80 1.10 E 2.60 2.75 2.90 D 1.60 1.75 1.90 HE 3.50 3.65 3.80 c 0.12 0.17 0.22 L1 0.25 0.45 0.65 All Dimensions in mm 7.SOLDERING FOOTPRINT DIM X Y X1 Leshan Radio Company, LTD. Rev.E Jun. 2022 (mm) 1.20 1.10 2.00 3/3 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.
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