S-LMBT4401LT1G

LMBT4401LT1G S-LMBT4401LT1G General Purpose Transistors NPN Silicon SOT23(TO-236) 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring 3 COLLECTOR unique site and control change requirements; AEC-Q101 1 BASE qualified and PPAP capable. 2 EMITTER 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT4401LT1G 2X 3000/Tape&Reel LMBT4401LT3G 2X 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Unit V Symbol Limits Collector–Emitter Voltage VCEO 40 Collector–Base Voltage VCBO 60 Emitter–Base Voltage VEBO 6 V V Collector Current — Continuous IC 600 mA Collector Current — Peak ICM 900 mA Symbol Limits Unit 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, PD FR−5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/ºC 556 ºC/W Thermal Resistance, RΘJA Junction–to–Ambient(Note 1) Junction and Storage temperature TJ,Tstg −55∼+150 ºC 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.D Jun. 2020 1/6 LMBT4401LT1G, S-LMBT4401LT1G General Purpose Transistors NPN Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Symbol Min. Typ. Max. Unit VBR(CEO) 40 - - V VBR(CBO) 60 - - V VBR(EBO) 6 - - V ICEX - - 0.1 μA IBEV - - 0.1 μA ICBO - - 100 nA IEBO - - 100 nA ICEO - - 10 μA 20 - - 40 - - (IC = 10 mA, VCE = 1.0 V) 80 - - (IC = 150 mA, VCE = 1.0 V) 100 - 300 (IC = 500 mA, VCE = 2.0 V) 40 - - - - 0.4 - - 0.75 0.75 - 0.95 - - 1.2 fT 250 - - MHz Cobo - - 6.5 pF Cibo - - 30 pF Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 0.1 mA, IC = 0) Collector Cutoff Current VCE = 35 V, VEB = 0.4V) Base Cutoff Current ( VCE = 35 V, VEB = 0.4V) Collector Cutoff Current (VCB =60V，IE =0) Emitter-Base cut-off current (IC = 0, VEB=5.0V) Collector-Emitter cutoff Current (VCE＝40V, IB=0) ON CHARACTERISTICS (Note 2.) DC Current Gain (IC = 0.1 mA, VCE = 1.0 V) (IC = 1.0 mA, VCE = 1.0 V) HFE Collector–Emitter Saturation Voltage (IC = 150 mA, IB = 15 mA) VCE(sat) (IC = 500 mA, IB = 50 mA) V Base–Emitter Saturation Voltage (IC = 150 mA, IB = 15 mA) VBE(sat) (IC = 500 mA, IB = 50 mA) V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 20mA, VCE= 20V, f = 100MHz) Output Capacitance (VCB = 5.0 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Leshan Radio Company, LTD. Rev.D Jun. 2020 2/6 LMBT4401LT1G, S-LMBT4401LT1G General Purpose Transistors NPN Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) SWITCHING CHARACTERISTICS Delay Time Rise Time (VCC = 30 V, VEB=2.0V,IC = 150 mA, IB1 = 15 mA) td - - 15 tr - - 20 ns Storage Time (VCC = 30 V, IC =150 mA,IB1 = IB2 =15 mA) Fall Time ts - - 225 tf - - 30 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.D Jun. 2020 3/6 LMBT4401LT1G, S-LMBT4401LT1G General Purpose Transistors NPN Silicon 6. ELECTRICAL CHARACTERISTICS CURVES 1000 1 HFE,DC Gain 100 VCE, Collector Emitter Voltage (V) 150℃ -55℃ 25℃ 10 1 0.001 0.01 0.1 IC,Collector Current(A) 0.8 IC=500mA 0.6 0.4 IC=100mA IC=10mA 0.2 IC=1mA 0 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 IB, Base Current (A) 1 DC Current Gain Collector Saturation Region 1.2 35 30 1.0 V, Voltage (V) C,Capacitance(pF) 25 0.8 VBE(on)@VCE=1V 0.6 0.4 Cibo 20 15 10 0.2 5 Cobo VCE(on)@IC/IB=10 0.0 0.0001 0 0.001 0.01 0.1 IC, Collector Current (A) 1 20 40 VR,Reverse Voltage(V) 60 Capacitance "On" Voltage Leshan Radio Company, LTD. 0 Rev.D Jun. 2020 4/6 LMBT4401LT1G, S-LMBT4401LT1G General Purpose Transistors NPN Silicon 1.6 1.2 IC/IB=10 VBE(sat),Base-Emittor Saturation Voltage(V) VCES(sat),Collector-Emittor Saturation Voltage(V) 6. ELECTRICAL CHARACTERISTICS CURVES(Con.) 1 150℃ 0.8 0.6 0.4 25℃ 0.2 -55℃ 0 0.0001 0.001 0.01 0.1 IC,Collector Current(A) IC/IB=10 1.4 1.2 1 -55℃ 0.8 25℃ 0.6 150℃ 0.4 0.2 0 0.0001 1 0.001 0.01 0.1 IC,Collector Current(A) 1 VBE(sat) vs. IC VCE(sat) vs. IC 1 1 150℃ 10us 1ms 0.1 0.1 25℃ 0.01 10ms IC (A) IC,Collector Current(A) 100us DC result 0.01 -55℃ 0.001 0.001 0 0.5 1 VBE(on),Base-emitter Voltage(V) 1.5 1 10 100 VCE (V) IC vs. VBE(on) Leshan Radio Company, LTD. 0.1 SAFE OPERATING AREA Rev.D Jun. 2020 5/6 LMBT4401LT1G, S-LMBT4401LT1G General Purpose Transistors NPN Silicon 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.D Jun. 2020 6/6