S-LMBT4403LT1G

LMBT4403LT1G S-LMBT4403LT1G General Purpose Transistors PNP Silicon 1. FEATURES ● We declare that the material of product compliance with SOT23(TO-236) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 3 COLLECTOR qualified and PPAP capable. 1 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT4403LT1G 2T 3000/Tape&Reel LMBT4403LT3G 2T 10000/Tape&Reel BASE 2 EMITTER 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage Parameter VCEO -40 V Collector–Base Voltage VCBO -40 V Emitter–Base Voltage VEBO -5 V IC -600 mA Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Symbol Limits Unit PD 225 mW 1.8 mW/ºC RΘJA 556 ºC/W PD 300 2.4 mW mW/ºC RΘJA 417 ºC/W TJ,Tstg −55∼+150 ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, Alumina Substrate(Note 2) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Leshan Radio Company, LTD. Rev.D Feb. 2023 1/5 LMBT4403LT1G, S-LMBT4403LT1G General Purpose Transistors PNP Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = -1.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = -0.1 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = -0.1 mA, IC = 0) Base Cutoff Current (VCE = -35 V, VEB = -0.4V) Collector Cutoff Current VCE = -35 V, VEB = -0.4V) Collector-Emitter cutoff Current (IB=0, VCE=-30V) Collector Cutoff Current (VCB = -60 V,IE = 0) Emitter Cut-off Current (VEB =-6V, IC =0) ON CHARACTERISTICS Symbol Min. Typ. Max. Unit VBR(CEO) -40 - - V VBR(CBO) -40 - - V VBR(EBO) -5 - - V IBEV - - -0.1 μA ICEX - - -0.1 μA ICEO - - -10 µA ICBO - - -100 nA IEBO - - -100 nA 30 - - 60 - - DC Current Gain (IC = -0.1 mA, VCE = -1.0 V) (IC = -1.0 mA, VCE = -1.0 V) hFE (IC = -10 mA, VCE = -1.0 V) 100 - - (IC = -150 mA, VCE = -2.0 V) 100 - 300 (IC = -500 mA, VCE = -2.0 V) 20 - - - - -0.4 - - -0.75 -0.75 - -0.95 - - -1.3 fT 200 - - MHz Ccb - - 8.5 pF Ceb - - 30 pF hfe 60 - 500 - (VCC=– 30V,VEB=–2.0V ,IC=–150mA,IB1=–15mA) td - - 15 tr - - 20 (VCC = –30 V,IC=–150 mA, IB1=IB2=–15 mA) ts - - 225 tf - - 30 Collector–Emitter Saturation Voltage VCE(sat) (IC = -150 mA, IB = -15 mA) (IC = -500 mA, IB = -50 mA) V Base–Emitter Saturation Voltage VBE(sat) (IC = -150 mA, IB = -15 mA) (IC = -500 mA, IB = -50 mA) V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –20mA, VCE = –10 V, f = 100 MHz) Collector–Base Capacitance (VCB = –10 V, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VBE = –0.5 V, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (VCE = –10 V, IC = –1.0 mA, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns 3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.D Feb. 2023 2/5 LMBT4403LT1G, S-LMBT4403LT1G General Purpose Transistors PNP Silicon 6.ELECTRICAL CHARACTERISTICS CURVES 500 500 VCE=1.0V 400 VCE=10V 150℃ 400 150℃ HFE Dc gain HFE DC Gain 125℃ 125℃ 300 200 25℃ 100 -55℃ 0 0.0001 300 25℃ 200 -55℃ 100 0.001 0.01 0.1 IC,Collector Current(A) 0 0.0001 1 0.001 IB=7.0mA IB=5.0mA VCE Collector to Emittor Voltage(V) IC Collector Current(A) IC=1.0mA 1.0 IB=3.0mA IB=9.0mA 0.4 1 HFE vs. IC(VCE=10V) IB=10mA 0.5 0.1 IC,Collector Current(A) HFE vs. IC(VCE=1.0V) 0.6 0.01 IB=2.5mA IB=2.0mA 0.3 IB=1.5mA 0.2 IB=1.0mA IC=500mA IC=10mA IC=460mA 0.8 IC=100mA IC=370mA IC=280mA 0.6 IC=190mA 0.4 0.2 0.1 0 0 1 2 3 4 5 0.0 0.0005 0.05 0.5 5 50 IB Base Current(mA) VCE Collector to Emittor Voltage(V) VCE vs. IB IC vs. VCE Leshan Radio Company, LTD. 0.005 Rev.D Feb. 2023 3/5 LMBT4403LT1G, S-LMBT4403LT1G General Purpose Transistors PNP Silicon 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1.2 1.2 1.0 1.0 VBE(sat) (V) VBE(on) (V) -55℃ -55℃ 0.8 25℃ 0.6 125℃ 0.8 25℃ 0.6 125℃ 0.4 0.4 150℃ 150℃ 0.2 0.2 IC/IB=10 VCE=1.0V 0.0 0.0001 0.001 0.01 0.1 0.0 0.0001 1 IC,Collector Current(A) 0.001 0.01 0.1 IC,Collector Current(A) VBE(sat) vs. IC VBE(on) vs. IC 50 0.30 f=1.0MHz Ta=25℃ IC/IB=10 0.25 40 0.20 Capacitance(pF) VCE(sat) (V) 1 150℃ 0.15 -55℃ Cibo 30 20 0.10 0.05 Cobo 10 25℃ 125℃ 0.00 0.001 0 0.01 0.1 IC Collector Current(A) 1 VCE(sat) vs. IC Leshan Radio Company, LTD. 0.1 1 10 VR Reverse Voltage(V) 100 Capacitance Rev.D Feb. 2023 4/5 LMBT4403LT1G, S-LMBT4403LT1G General Purpose Transistors PNP Silicon 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.D Feb. 2023 5/5 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.