S-LMUN5311DW1T1G

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5311DW1T1G series, two complementary BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • We declare that the material of product compliance with RoHS requirements and Halogen Free. • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. MAXIMUM RATINGS 6 5 4 1 2 3 SOT-363/SC-88 6 5 R1 Q2 (T A = 25°C unless otherwise noted, common for Q 1 4 R2 and Q 2 , – minus sign for Q 1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Symbol Value V CBO 50 V CEO 50 IC 100 R1 1 Symbol PD R θJA MARKING DIAGRAM Max 187 (Note 1.) Unit mW 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) mW/°C 670 (Note 1.) 490 (Note 2.) 3 2 6 T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Q1 R2 Unit Vdc Vdc mAdc °C/W 5 4 XX 1 2 3 xx = Device Marking = (See Page 2) DEVICE MARKING Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C INFORMATION Symbol PD Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead R θJA Junction and Storage Temperature T J , T stg 1. FR–4 @ Minimum Pad Mar. 2020 R θJL Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) Unit See specific marking information in the device marking table on page 2 of mW this data sheet. mW/°C 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) °C/W –55 to +150 °C °C/W 2. FR–4 @ 1.0 x 1.0 inch Pad Rev.B 1/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1(K) R2(K) Shipping LMUN5311DW1T1G SOT-363 11 10 10 3000/Tape&Reel LMUN5311DW1T3G SOT-363 11 10 10 10000/Tape&Reel LMUN5312DW1T1G SOT-363 12 22 22 3000/Tape&Reel LMUN5312DW1T3G SOT-363 12 22 22 10000/Tape&Reel LMUN5313DW1T1G SOT-363 13 47 47 3000/Tape&Reel LMUN5313DW1T3G SOT-363 13 47 47 10000/Tape&Reel LMUN5314DW1T1G SOT-363 14 10 47 3000/Tape&Reel LMUN5314DW1T3G SOT-363 14 10 47 10000/Tape&Reel LMUN5315DW1T1G SOT-363 15 10 Ğ 3000/Tape&Reel LMUN5315DW1T3G SOT-363 15 10 Ğ 10000/Tape&Reel LMUN5316DW1T1G SOT-363 16 4.7 Ğ 3000/Tape&Reel LMUN5316DW1T3G SOT-363 16 4.7 Ğ 10000/Tape&Reel LMUN5330DW1T1G SOT-363 30 1 1 3000/Tape&Reel LMUN5330DW1T3G SOT-363 30 1 1 10000/Tape&Reel LMUN5331DW1T1G SOT-363 31 2.2 2.2 3000/Tape&Reel LMUN5331DW1T3G SOT-363 31 2.2 2.2 10000/Tape&Reel LMUN5332DW1T1G SOT-363 32 4.7 4.7 3000/Tape&Reel LMUN5332DW1T3G SOT-363 32 4.7 4.7 10000/Tape&Reel LMUN5333DW1T1G SOT-363 33 4.7 47 3000/Tape&Reel LMUN5333DW1T3G SOT-363 33 4.7 47 10000/Tape&Reel LMUN5334DW1T1G SOT-363 34 22 47 3000/Tape&Reel LMUN5334DW1T3G SOT-363 34 22 47 10000/Tape&Reel LMUN5335DW1T1G SOT-363 35 2.2 47 3000/Tape&Reel LMUN5335DW1T3G SOT-363 35 2.2 47 10000/Tape&Reel Mar. 2020 Rev.B 2/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 kW R1/R2 0.8 0.17 − 0.8 0.055 0.38 0.038 1.0 0.21 − 1.0 0.1 0.47 0.047 1.2 0.25 − 1.2 0.185 0.56 0.056 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) LMUN5311DW1T1G LMUN5312DW1T1G LMUN5313DW1T1G LMUN5314DW1T1G LMUN5315DW1T1G LMUN5316DW1T1G LMUN5330DW1T1G LMUN5331DW1T1G LMUN5332DW1T1G LMUN5333DW1T1G LMUN5334DW1T1G LMUN5335DW1T1G Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) LMUN5330DW1T1G/LMUN5331DW1T1G (IC = 10 mA, IB = 1 mA) LMUN5315DW1T1G/LMUN5316DW1T1G LMUN5332DW1T1G/LMUN5333DW1T1G/LMUN5334DW1T1G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor VOL LMUN5311DW1T1G LMUN5312DW1T1G LMUN5314DW1T1G LMUN5315DW1T1G LMUN5316DW1T1G LMUN5330DW1T1G LMUN5331DW1T1G LMUN5332DW1T1G LMUN5333DW1T1G LMUN5334DW1T1G LMUN5335DW1T1G LMUN5313DW1T1G Vdc LMUN5330DW1T1G LMUN5315DW1T1G LMUN5316DW1T1G LMUN5333DW1T1G LMUN5311DW1T1G LMUN5312DW1T1G LMUN5313DW1T1G LMUN5314DW1T1G LMUN5315DW1T1G LMUN5316DW1T1G LMUN5330DW1T1G LMUN5331DW1T1G LMUN5332DW1T1G LMUN5333DW1T1G LMUN5334DW1T1G LMUN5335DW1T1G Resistor RatioLMUN5311DW1T1G/LMUN5312DW1T1G/LMUN5313DW1T1G LMUN5314DW1T1G LMUN5315DW1T1G/LMUN5316DW1T1G LMUN5330DW1T1G/LMUN5331DW1T1G/LMUN5332DW1T1G LMUN5333DW1T1G LMUN5334DW1T1G LMUN5335DW1T1G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Mar. 2020 Vdc Rev.B 3/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc Characteristic OFF CHARACTERISTICS LMUN5311DW1T1G LMUN5312DW1T1G LMUN5313DW1T1G LMUN5314DW1T1G LMUN5315DW1T1G LMUN5316DW1T1G LMUN5330DW1T1G LMUN5331DW1T1G LMUN5332DW1T1G LMUN5333DW1T1G LMUN5334DW1T1G LMUN5335DW1T1G 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% ALL LMUN5311DW1T1G SERIES DEVICES PD, POWER DISSIPATION (mW) 300 Both Junctions 250 200 150 one Junction 100 50 0 −50 RqJA = 490°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve Mar. 2020 Rev.B 4/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5311DW1T1G NPN TRANSISTOR TA
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−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA
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75°C 25°C −25°C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 4 3 100 50 TA
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−25°C 10 1 0.1 0.01 VO = 5 V 0.001 Figure 4. Output Capacitance 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 Figure 5. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA
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−25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current Mar. 2020 9 Rev.B 5/29 10 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5311DW1T1G PNP TRANSISTOR TA
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−25°C 0.1 25°C 75°C 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) TA
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75°C 25°C 100 10 50 VCE = 10 V −25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 4 3 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 V in , INPUT VOLTAGE (VOLTS) 25°C 75°C TA
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−25°C 10 1 0.1 0.01 0.001 VO = 5 V 0 Figure 9. Output Capacitance 100 100 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 Figure 10. Output Current versus Input Voltage VO = 0.2 V TA
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−25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current Mar. 2020 9 Rev.B 6/29 10 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5312DW1T1G NPN TRANSISTOR IC/IB = 10 25°C TA
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−25°C 0.1 75°C 0.01 0.001 0 20 −25°C 100 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 100 f = 1 MHz IE = 0 V TA = 25°C 3 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) TA
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75°C 25°C 10 50 40 VCE = 10 V 2 1 75°C 25°C TA
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−25°C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 14. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA
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−25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current Mar. 2020 10 Rev.B 7/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5312DW1T1G PNP TRANSISTOR IC/IB = 10 1 25°C TA
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−25°C 75°C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 TA
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75°C 1 10 Figure 18. DC Current Gain 100 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 19. Output Capacitance V in , INPUT VOLTAGE (VOLTS) 100 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) versus IC 3 25°C −25°C 100 10 50 VCE = 10 V TA
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−25°C 10 1 0.1 0.01 0.001 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 Figure 20. Output Current versus Input Voltage VO = 0.2 V TA
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−25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Mar. 2020 Rev.B 8/29 10 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 10 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5313DW1T1G NPN TRANSISTOR 1 25°C TA
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−25°C 75°C 0.1 0.01 0 TA
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75°C 25°C −25°C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V 1 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 100 2.4 2.0 1.6 1.2 0.8 0.4 0 0 10 50 20 30 40 VR, REVERSE VOLTAGE (V) 25°C 75°C f = 10 kHz IE = 0 A TA = 25°C IC, COLLECTOR CURRENT (mA) Cob, OUTPUT CAPACITANCE (pF) 3.2 2.8 100 10 IC, COLLECTOR CURRENT (mA) TA
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−25°C 10 1 0.1 0.01 VO = 5 V 0.001 Figure 24. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 Figure 25. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA
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−25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current Mar. 2020 10 Rev.B 9/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1 1000 IC/IB = 10 TA
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−25°C 25°C 75°C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5313DW1T1G PNP TRANSISTOR 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA
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75°C 25°C −25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 100 f = 10 kHz lE = 0 A TA = 25°C 8 IC, COLLECTOR CURRENT (mA) Cob, OUTPUT CAPACITANCE (pF) 10 9 7 6 5 4 3 2 1 0 0 10 100 20 30 40 VR, REVERSE VOLTAGE (V) −25°C 10 1 0.1 0.01 0.001 50 25°C TA
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75°C Figure 29. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 Figure 30. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA
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−25°C 25°C 75°C 10 1
0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 31. Input Voltage versus Output Current Mar. 2020
9 Rev.B 10/29 10 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 300 1 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5314DW1T1G NPN TRANSISTOR TA
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−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA
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75°C VCE = 10 250 25°C 200 −25°C 150 100 50 0 80 1 2 4 6 Figure 32. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25°C 3 TA
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75°C IC, COLLECTOR CURRENT (mA) 3.5 Cob , CAPACITANCE (pF) 90 100 Figure 33. DC Current Gain 4 2.5 2 1.5 1 0.5 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 34. Output Capacitance 40 45 50 25°C −25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 Figure 35. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA
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−25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 36. Input Voltage versus Output Current Mar. 2020 Rev.B 11/29 10 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5314DW1T1G PNP TRANSISTOR TA
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−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA
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75°C VCE = 10 V 160 25°C 140 −25°C 120 100 80 60 40 20 0 80 1 2 4 6 Figure 37. VCE(sat) versus IC 100 TA
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75°C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 4 Cob , CAPACITANCE (pF) 80 90 100 Figure 38. DC Current Gain 4.5 3 2.5 2 1.5 1 0.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 Figure 39. Output Capacitance 50 25°C −25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 Figure 40. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V 25°C 75°C TA
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−25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 41. Input Voltage versus Output Current Mar. 2020 10 Rev.B 12/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 TA = −25°C 100 10 1 50 25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC 100 Figure 43. DC Current Gain 12 100 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5315DW1T1G NPN TRANSISTOR f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 35 40 45 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 44. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C 75°C VO = 0.2 V 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 46. Input Voltage versus Output Current Mar. 2020 10 Figure 45. Output Current versus Input Voltage 10 0.1 9 Rev.B 13/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 30 40 10 IC, COLLECTOR CURRENT (mA) 25°C 10 1 50 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) versus IC 100 Figure 48. DC Current Gain 100 4 IC, COLLECTOR CURRENT (mA) 4.5 Cob, CAPACITANCE (pF) VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5315DW1T1G PNP TRANSISTOR f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 49. Output Capacitance 50 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C 75°C VO = 0.2 V 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 51. Input Voltage versus Output Current Mar. 2020 10 Figure 50. Output Current versus Input Voltage 10 0.1 9 Rev.B 14/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 25°C 10 1 50 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 52. VCE(sat) versus IC 100 Figure 53. DC Current Gain 12 100 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5316DW1T1G NPN TRANSISTOR f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 35 40 45 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 54. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C 75°C VO = 0.2 V 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 56. Input Voltage versus Output Current Mar. 2020 10 Figure 55. Output Current versus Input Voltage 10 0.1 9 Rev.B 15/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 30 40 10 IC, COLLECTOR CURRENT (mA) TA = −25°C 10 1 50 25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 57. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 4 3.5 100 Figure 58. DC Current Gain 4.5 Cob, CAPACITANCE (pF) VCE = 10 V 75°C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5316DW1T1G PNP TRANSISTOR 3 2.5 2 1.5 1 0.5 75°C 10 25°C TA = −25°C 1 0.1 0.01 VO = 5 V 0.001 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 59. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 Figure 60. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = −25°C 1 25°C 75°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 61. Input Voltage versus Output Current Mar. 2020 10 Rev.B 16/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5330DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 100 75°C 10 25°C TA = −25°C 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 1 30 1 10 IC, COLLECTOR CURRENT (mA) Figure 62. VCE(sat) versus IC Figure 63. DC Current Gain 10 100 75°C 10 Vin, INPUT VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) 100 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V TA = −25°C 1 25°C VO = 0.2 V 0.1 0.001 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 64. Output Current versus Input Voltage Mar. 2020 75°C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 65. Input Voltage versus Output Current Rev.B 17/29 25 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5330DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 75°C 10 25°C TA = −25°C VCE = 10 V 0.001 30 10 20 40 IC, COLLECTOR CURRENT (mA) 0 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 66. VCE(sat) versus IC Figure 67. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 100 4 Cob, CAPACITANCE (pF) 100 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 35 40 45 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 68. Output Capacitance 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 70. Input Voltage versus Output Current Mar. 2020 10 Figure 69. Output Current versus Input Voltage 10 1 9 Rev.B 18/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5330DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 100 75°C TA = −25°C 1 30 25°C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 71. VCE(sat) versus IC Figure 72. DC Current Gain 12 100 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 100 f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 10 75°C 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 73. Output Capacitance 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 75°C 25°C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 75. Input Voltage versus Output Current Mar. 2020 10 Figure 74. Output Current versus Input Voltage 10 1 9 Rev.B 19/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5331DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 TA = −25°C VCE = 10 V 0.001 30 10 20 40 IC, COLLECTOR CURRENT (mA) 0 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 76. VCE(sat) versus IC 100 Figure 77. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 100 4 Cob, CAPACITANCE (pF) 25°C 75°C 10 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 35 40 45 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 78. Output Capacitance 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 Figure 79. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = −25°C 75°C 1 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 80. Input Voltage versus Output Current Mar. 2020 10 Rev.B 20/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5332DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 75°C 100 25°C 10 TA = −25°C 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 81. VCE(sat) versus IC Figure 82. DC Current Gain 12 100 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 100 f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 35 40 45 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 83. Output Capacitance 50 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 25°C 75°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 85. Input Voltage versus Output Current Mar. 2020 10 Figure 84. Output Current versus Input Voltage 10 1 9 Rev.B 21/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5332DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 30 10 20 40 IC, COLLECTOR CURRENT (mA) 0 TA = −25°C 10 1 50 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 86. VCE(sat) versus IC 100 Figure 87. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 6 Cob, CAPACITANCE (pF) 25°C f = 1 MHz IE = 0 V TA = 25°C 5 4 3 2 1 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 88. Output Capacitance 50 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 Figure 89. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 90. Input Voltage versus Output Current Mar. 2020 10 Rev.B 22/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5333DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 91. VCE(sat) versus IC 100 Figure 92. DC Current Gain 8 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 7 Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = −25°C 6 5 4 3 2 1 0 75°C 10 25°C 1 0.1 TA = −25°C 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 93. Output Capacitance 50 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 95. Input Voltage versus Output Current Mar. 2020 10 Figure 94. Output Current versus Input Voltage 10 75°C 9 Rev.B 23/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5333DW1T1G PNP TRANSISTOR 75°C −25°C 25°C 0.01 0.001 0 5 20 10 15 25 IC, COLLECTOR CURRENT (mA) 75°C 25°C 10 1 30 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 96. VCE(sat) versus IC Figure 97. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 3.5 Cob, CAPACITANCE (pF) 100 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 35 40 45 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 98. Output Capacitance 50 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 100. Input Voltage versus Output Current Mar. 2020 10 Figure 99. Output Current versus Input Voltage 10 75°C 9 Rev.B 24/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5334DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 101. VCE(sat) versus IC 100 Figure 102. DC Current Gain 3.5 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 3 Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = −25°C 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 0.1 TA = −25°C 0.01 VO = 5 V 0.001 0 5 35 40 45 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 103. Output Capacitance 50 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 Figure 104. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 100 10 TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 105. Input Voltage versus Output Current Mar. 2020 Rev.B 25/29 10 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5334DW1T1G PNP TRANSISTOR 75°C −25°C 25°C 0.01 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) Figure 106. VCE(sat) versus IC Mar. 2020 30 75°C 100 TA = −25°C 25°C 10 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 107. DC Current Gain Rev.B 26/29 100 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5335DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 108. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 100 Figure 109. DC Current Gain 12 f = 1 MHz IE = 0 V TA = 25°C 10 25°C 10 1 50 TA = −25°C 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 35 40 45 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 110. Output Capacitance 50 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 Figure 111. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 112. Input Voltage versus Output Current Mar. 2020 Rev.B 27/29 10 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5335DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 30 10 20 40 IC, COLLECTOR CURRENT (mA) 0 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 113. VCE(sat) versus IC 100 Figure 114. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 100 4 Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = −25°C f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 25°C 10 75°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 35 40 45 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 115. Output Capacitance 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 Figure 116. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 75°C 1 25°C TA = −25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 117. Input Voltage versus Output Current Mar. 2020 Rev.B 28/29 10 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1G Series S-LMUN5311DW1T1G Series SC-88/SOT-363 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G DIM 6 5 4 - B- S 1 2 3 0.2 (0.008) M B M D6PL N J A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 K H 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm Mar. 2020 Rev.B 29/29