S-LP03N060TZHG

S-LP03N060TZHG P-Channel 60-V (D-S) MOSFET 1. FEATURES ● Low RDS(on) trench technology ● Low thermal impedance ● Fast switching speed ● We declare that the material of product compliance with SOT223 RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 2,4 Drain qualified and PPAP capable. 2. APPLICATIONS ● Power Routing ● DC/DC Conversion Motor Drives ● 1 Gate 3 Source 3. DEVICE MARKING AND ORDERING INFORMATION Device S-LP03N060TZHG Marking Shipping GQ 1000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain-Source Voltage Gate-Source Voltage TA = 25℃ Continuous Drain Current (Note1) Pulsed Drain Current (Note2) Avalanche Current (L = 0.1mH) Avalanche Energy (L = 0.1mH) Symbol Limits Unit VDS VGS ID -60 ±20 V -2.8 IDM IAS EAS -12 8 3.2 PD 1.7 TJ , Tstg -55~+150 Power Dissipation (Note1) TA = 25℃ Operating Junction and Storage Temperature Range A A mJ W ℃ 5. THERMAL CHARACTERISTICS Parameter Symbol Limits Unit Thermal Resistance,Junction–to–Ambient(Note 1) RΘJA 70 ℃/W Thermal Resistance,Junction-to-Case (Note 3) RθJA 160 ℃/W Thermal Resistance,Junction-to-Case (Note 3) RθJC 20 ℃/W 1."1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu. 2.Pulse width limited by maximum junction temperature 3.Surface−mounted on FR4 board using the minimum recommended pad size. Leshan Radio Company, LTD. Rev.O Jul. 2021 1/6 S-LP03N060TZHG P-Channel 60-V (D-S) MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. Unit VBRDSS -60 - - V VGS(th) -1 - -3 V IGSS - - ±100 nA IDSS - - -10 µA RDS(ON) - 170 215 mΩ - 200 260 VSD - - -1.2 Qg - 3.6 - Qgs - 1.2 - 1.7 3.2 - 23.6 14.5 - Static Drain–Source Breakdown Voltage (VGS = 0, ID = -250μA) Gate Threshold Voltage (VDS =VGS , ID =-250μA) Gate Leakage Current (VDS =0V, VGS =±20V) Zero Gate Voltage Drain Current (VDS = -60 V, VGS = 0 V) Drain-Source On-Resistance(Note 4) (VGS = -10 V, ID = -1.8 A) (VGS = -4.5 V, ID = -1.4 A) Diode Forward Voltage (IS = -1.2 A, VGS = 0 V) V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time (VDS = -48 V, VGS = -4.5 V,ID = -1 A) (VDS = -30 V, RL = 30 Ω,ID = -1 A,VGEN = -10 V, RGEN = 3.1 Ω) Qgd - td(on) - tr - td(off) - - tf - Input Capacitance Ciss - 17.2 366 Output Capacitance Coss - 24 - Crss - 17 - Rg - 5 - Fall Time (VDS = -30 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance Gate Resistance (VDS = 0 V, VGS = 0 V, f = 1 MHz) nC ns pF Ω 4.Pulse test: PW ≤ 300us duty cycle ≤ 2%. Leshan Radio Company, LTD. Rev.O Jul. 2021 2/6 S-LP03N060TZHG P-Channel 60-V (D-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES VGS=3.8V,4V,6V,8V,10V 8 8 7 VGS=3.6V 6 6 VGS=3.4V 5 ID(A) ID(A) VDS=10V 4 VGS=3.2V 4 25℃ 3 VGS=3.0V 2 2 1 150℃ 0 -55℃ 0 0 1 2 3 4 5 0 1 2 3 4 5 VGS(V) VDS(V) ID vs. VGS ID vs. VDS 0.5 50 0.4 150℃ 0.5 25℃ RDS(on) (Ω) IS(A) 5 -55℃ 0.3 VGS=4.5V 0.2 VGS=10V 0.05 0.1 0.005 0 0.2 0.4 0.6 0.8 VSD(V) 1.0 1.2 1 3 4 5 6 7 8 ID(A) IS vs. VSD Leshan Radio Company, LTD. 2 RDS(on) vs. ID Rev.O Jul. 2021 3/6 S-LP03N060TZHG P-Channel 60-V (D-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.40 0.9 0.8 0.35 ID=1.8A 0.7 0.30 RDS(on) (Ω) RDS(on) (Ω) 0.6 0.5 0.4 150℃ 0.3 0.2 VGS=4.5V,ID=1.4A 0.20 VGS=10V,ID=1.8A 0.15 0.10 25℃ 0.05 -55℃ 0.1 0.25 0.0 0.00 0 2 4 6 8 10 -50 VGS(V) -25 0 25 50 75 Tj(℃) RDS(on) vs. Tj RDS(on) vs. VGS 2.2 500 2.1 ID=250uA f=1.0MHz, Ta=25℃ Ciss 400 Capacitance(pF) 2.0 1.9 VGSth(V) 100 125 150 1.8 1.7 300 200 1.6 100 Coss 1.5 Crss 0 1.4 -50 -25 0 25 50 75 Tj(℃) 100 125 150 0 VGSth vs. Tj Leshan Radio Company, LTD. 10 20 30 VDS(V) 40 50 60 Capacitance Rev.O Jul. 2021 4/6 S-LP03N060TZHG P-Channel 60-V (D-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 100 10us 10 ID(A) 100us 1 1ms 10ms 100ms DC result 0.1 0.01 PCB Size 1.5 x 1.5in(FR-4) 0.1 1 10 100 VDS(V) Notmalized Effective Transient Thermal Impedance Safe Operating Area 10 1 0.1 0.01 50% 25% 10% 5% P(pk) t1 t2 1% 1.Duty Cycle, D = t1 / t2 2.RθJA = 70 °C /W 3.TJ -TA =P*RθJA(t) 4.RθJA(t)=r(t)*RθJA 0.1% 0.001 Single Pulse 0.0001 0.000001 0.00001 FR4 Board 0.0001 0.001 0.01 0.1 Pulse time (s) 1 10 100 1000 Thermal Response Leshan Radio Company, LTD. Rev.O Jul. 2021 5/6 S-LP03N060TZHG P-Channel 60-V (D-S) MOSFET 8.OUTLINE AND DIMENSIONS SOT223 D b1 C E HE ɵ1 ɵ1 L1 A2 b2 Gauge Plane Seating Plane L L1 0.25 ɵ e1 e DIM A A1 A2 b1 b2 c D E e e1 HE L L1 θ θ1 SOT223 MIN NOR 1.50 1.60 0.00 0.05 0.80 0.90 2.90 3.02 0.60 0.72 0.20 0.27 6.30 6.50 3.30 3.50 4.60BSC 2.30BSC 6.80 7.00 0.80 1.00 1.75(REF) 0º~8º 8º 10º All Dimensions in mm MAX 1.70 0.10 1.00 3.10 0.80 0.35 6.70 3.70 7.20 1.20 12º A GENERAL NOTES A1 1. Top package surface finish Ra0.4±0.2um 2. Bottom package surface finish Ra0.7±0.2um 3. Side package surface finish Ra0.4±0.2um 4. Protrusion or Gate Burrs shall not exceed 0.10mm per side. 9.SOLDERING FOOTPRINT Y1 X1 C2 DIM X1 Y1 X2 Y2 C1 C2 Y2 X2 SOT223 (mm) 3.80 2.00 1.20 2.00 2.30 6.30 C1 Leshan Radio Company, LTD. C1 Rev.O Jul. 2021 6/6 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.