S-LPB8630DT0AG

S-LPB8630DT0AG P-Channel 60-V Power MOSFET 1. FEATURES ● Low RDS(on) trench technology ● Low thermal impedance ● Fast switching speed ● We declare that the material of product compliance with ● RoHS requirements and Halogen Free. S-prefix for automotive and other applications requiring Pin 1 DFN3333-8A unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS ● Power Routing ● DC/DC Conversion Motor Drives ● 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping P30 2000/Tape&Reel S-LPB8630DT0AG 4. MAXIMUM RATINGS Parameter Symbol Limits Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Continuous Drain Current Pulsed Drain Current Avalanche Current TA = 25℃ Power Dissipation -36 -20.3 ID TC = 70℃ TC = 25℃ -16 IDM IAS Avalanche Energy (L = 0.1mH) Power Dissipation (Note 1) -7 IDM TA = 25℃ TC = 25℃ -81 29 42.05 EAS TA = 25℃ TC = 25℃ TC = 70℃ Operating Junction and Storage Temperature Range 1.9 PD TA = 70℃ V -9 ID TA = 70℃ Unit 62.5 40 -55~+150 TJ , Tstg A A mJ W 1.2 PD A W ℃ 5. THERMAL CHARACTERISTICS Parameter Thermal Resistance,Junction-to-Ambient(Note 1) Thermal Resistance,Junction-to-Ambient(Note 3) Thermal Resistance,Junction-to-Case Symbol RθJA RθJA Max 65 165 RθJC 2 Unit ℃/W Note:1.Surface mounted on "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu. 2.Pulse width limited by maximum junction temperature. 3.Surface−mounted on FR4 board using the minimum recommended pad size. Leshan Radio Company, LTD. Rev.B Feb. 2024 1/8 S-LPB8630DT0AG P-Channel 60-V Power MOSFET 6. ELECTRICAL CHARACTERISTICS Characteristic Static Drain–Source Breakdown Voltage (VGS = 0, ID = -250μA) Gate Threshold Voltage (VDS =VGS , ID =-250μA) Gate Leakage Current (VDS =0V, VGS =±20V) Symbol Min. Typ. Max. Unit VBRDSS -60 - - V VGS(th) -1 - -3 V IGSS - - ±10 uA IDSS - - -1 µA - - -25 - 20 26 - 25 34 Qg - 29.6 45 Qgs - 7.4 12 9.7 15 Zero Gate Voltage Drain Current (VDS = -48 V, VGS = 0 V) (VDS = -48 V, VGS = 0 V, TJ = 55°C) Drain-Source On-Resistance(Note 4) RDS(ON) (VGS = -10 V, ID = -4 A) (VGS = -4.5 V, ID = -4 A) mΩ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time (VDS = -30 V, VGS = -4.5 V,ID = -4 A) (VDS = -30 V, RL = 7.5 Ω,ID = -4 A,VGEN = -10 V, RGEN = 6 Ω) Qgd - td(on) - 15 - tr - 18 - td(off) - 136 - nC ns tf - 76 Input Capacitance Ciss - 3571 5357 Output Capacitance Coss - 162 243 Crss - 146 219 Rg - 3 - Ω IS - - -20.3 A ISM - - -81 A VSD - -0.75 -1.2 V trr - 37 - ns Reverse Recovery Charge (VR=-30V,IF=-4.5A,dIF/dt=100A/us) Qrr - 41 - nC Reverse Recovery Current (VR=-30V,IF=-4.5A,dIF/dt=100A/us) IRRM - 2.2 - A Fall Time (VDS = -30 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance Gate Resistance (VDS = 0 V, VGS = 0 V, f = 1 MHz) Diode characteristics Continuous Current TC= 25℃ Plused Current TC= 25℃ Diode Forward Voltage (IS = -2 A, VGS = 0 V) Reverse Recovery Time (VR=-30V,IF=-4.5A,dIF/dt=100A/us) pF 4.Pulse test: PW≤ 300µs duty cycle ≤ 2%. Leshan Radio Company, LTD. Rev.B Feb. 2024 2/8 S-LPB8630DT0AG P-Channel 60-V Power MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES 35 35 VGS=5V,7V,9V,10V 30 30 VDS=10V VGS=3.0V 25 20 VGS=2.8V ID(A) ID(A) 25 15 20 15 25℃ VGS=2.6V 10 10 VGS=2.4V 5 5 VGS=2.2V 0 150℃ -55℃ 0 0 1 2 3 4 5 0 VDS(V) 0.5 1 1.5 2 VGS(A) 2.5 3 3.5 35 40 ID vs. VGS ID vs. VDS 0.050 50 0.045 0.040 5 150℃ 0.5 25℃ -55℃ RDS(on)(Ω) IS(A) ） 0.035 0.030 VGS=4.5V 0.025 VGS=10V 0.020 0.015 0.05 0.010 0.005 0.005 0.00 0.000 0.20 0.40 0.60 0.80 VSD(V) 1.00 1.20 IS vs. VSD Leshan Radio Company, LTD. 0 5 10 15 20 25 ID(A) 30 RDS(on) vs. ID Rev.B Feb. 2024 3/8 S-LPB8630DT0AG P-Channel 60-V Power MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.050 0.10 0.045 ID=4A 0.08 0.040 RDS(on)(Ω) RDS(on)(Ω) 0.035 0.06 150℃ 0.04 0.030 VGS=4.5V,ID=4A 0.025 VGS=10V,ID=4A 0.020 0.015 25℃ 0.02 0.010 -55℃ 0.005 0.00 0 2 4 6 8 0.000 -50 10 -25 0 25 VGS(V) 100 125 150 RDS(on) vs. Tj RDS(on) vs. VGS 5000 1.70 1.60 4500 ID=250uA Ta=25℃， f=1MHz Ciss 4000 1.50 3500 Capacitance(pF) 1.40 VGS(th)(V) 50 75 Tj(℃) 1.30 1.20 1.10 3000 2500 2000 1500 1.00 1000 0.90 500 0.80 0 -50 -25 0 25 50 75 Tj(℃) 100 125 150 VGSth vs. Tj Leshan Radio Company, LTD. Coss Crss 0 10 20 30 VDS(V) 40 50 60 Capacitance Rev.B Feb. 2024 4/8 S-LPB8630DT0AG P-Channel 60-V Power MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 100 10us ID(A) 10 100us 1ms 100ms 1 10ms DC result 0.1 0.01 PCB Size: 30.0mm×25.0mm×1.6mm(FR4) 0.2 2 20 200 VDS(V) Safe Operating Area Leshan Radio Company, LTD. Rev.B Feb. 2024 5/8 S-LPB8630DT0AG P-Channel 60-V Power MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 100 100 80 80 Ider (%) 120 Pder(%) 120 60 60 40 40 20 20 Pder=PD÷PD(25℃)×100% 0 Ider=ID÷ID(25℃)×100% 0 -40 -20 0 20 40 -40 -20 60 80 100 120 140 160 TC(℃) 0 20 40 60 80 100 120 140 160 TC (℃) Normalizeddrain Current Normalized Derating Curve 100 4.5 10us 4.0 VDS=-30V,VGS=-4.5V ID=-4A 3.5 100us 2.5 ID(A) VGS(V) 3.0 2.0 10 DC result 1ms 1.5 1.0 TJ=150℃ TC=25℃ Single Pulse 0.5 1 0.0 0 10 20 Qg(nC) 30 40 VGS vs. Qg Leshan Radio Company, LTD. 1 10 VDS(V) 100 Safe Operating Area Rev.B Feb. 2024 6/8 S-LPB8630DT0AG P-Channel 60-V Power MOSFET Notmalized Effective Transient Thermal Impedance 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 10 1 0.1 0.01 50% 20% 10% 5% 2% 1% 0.001 Single Pulse 0.0001 0.00001 0.000001 0.00001 0.0001 0.001 0.01 0.1 Pulse time (s) 1 10 100 1000 Thermal Response Leshan Radio Company, LTD. Rev.B Feb. 2024 7/8 S-LPB8630DT0AG P-Channel 60-V Power MOSFET 8.OUTLINE AND DIMENSIONS DFN3333-8A DIM MIN NOR MAX A 0.60 0.65 0.70 A1 0.00 0.03 0.05 b 0.27 0.32 0.37 D 3.25 3.30 3.35 E 3.25 3.30 3.35 D1 2.22 2.27 2.32 E1 1.60 1.65 1.70 e 0.65BSC L 0.40 0.45 0.50 L1 0.30 0.35 0.40 A3 0.152REF. All Dimensions in mm 9.SOLDERING FOOTPRINT DFN3333-8A DIM (mm) C 0.65 X 0.42 X1 0.42 X2 0.23 X3 2.37 Y 0.70 Y1 1.85 Y2 3.70 Y3 2.25 Leshan Radio Company, LTD. Rev.B Feb. 2024 8/8 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.