SRK7002LT1G
S-SRK7002LT1G
N-Channel Small Signal MOSFET
1. FEATURES
●
Low on-Resistance.
●
Fast switching speed.
●
Low-voltage drive.
●
Easily designed drive circuits.
●
Easy to parallel.
●
ESD Protected:2000V
●
We declare that the material of product compliance with
SOT23(TO-236)
3
d
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
1
unique site and control change requirements; AEC-Q101
g
qualified and PPAP capable.
s
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
SRK7002LT1G
RK
3000/Tape&Reel
SRK7002LT3G
RK
10000/Tape&Reel
2
3. MAXIMUM RATINGS(Ta = 25ºC)
Symbol
Limits
Unit
VDSS
VGS
60
V
±20
Continuous
ID
115
V
mA
Pulsed
IDP(Note 1)
0.8
A
Continuous
IDR
115
mA
Pulsed
IDRP(Note 1)
0.8
A
PD(Note 2)
225
mW
Channel temperature
Tch
150
℃
Storage temperature
Tstg
-55~+150
℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain current
Drain reverse current
Total power dissipation
1. Pw≤10µs, Duty cycle≤1%
2. When mounted on a 1×0.75×0.062 inch glass epoxy board.
Leshan Radio Company, LTD.
Rev.A Aug. 2018
1/5
SRK7002LT1G, S-SRK7002LT1G
N-Channel Small Signal MOSFET
4. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
Characteristic
Symbol
Gate-source leakage current
Typ.
Max.
-
-
±10
60
-
-
-
-
1
1
1.85
2.5
-
-
7.5
-
-
7.5
80
-
-
mS
Ciss
-
25
Coss
Crss
-
10
50
25
pF
-
3
5
-
3.5
-
-
40
-
IGSS
(VGS =±20V, VDS =0V)
Drain-source breakdown voltage
V(BR)DSS
(ID =10µA, VGS =0V)
Zero gate voltage drain current
IDSS
(VDS =60V, VGS =0V)
Gate threshold voltage
VGS(th)
(VDS =VGS, ID =250µA)
Unit
Min.
µA
V
μA
V
Drain-source on-state resistance
RDS(on)
(ID =0.5A, VGS =10V)
(ID =0.05A, VGS =5V)
Forward transfer admittance
l Y fs l
(VDS =10V, ID =0.2A)
Input capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
(VDS
=25V,VGS
=0V,f=1MHz)
(ID =200mA,
VDD =30V,VGS
=10V,RL =150
Ω,RGS =10Ω)
td(on)
td(off)
Ω
ns
3. PW ≤300µs, Duty cycle≤1%
Leshan Radio Company, LTD.
Rev.A Aug. 2018
2/5
SRK7002LT1G, S-SRK7002LT1G
N-Channel Small Signal MOSFET
5.ELECTRICAL CHARACTERISTICS CURVES
0.8
0.8 VGS=6V,8V,10V
VGS=4V
0.7
VDS=10V
0.7
-55℃
150℃
0.6
ID,Drain Current(A)
VGS=3.5V
0.5
0.4
VGS=3V
0.3
0.2
0.5
25℃
0.4
0.3
0.2
VGS=2.5V
0.1
0.1
VGS=2V
Ta=25℃
0
0
0
1
2
3
4
VDS,Drain to Source Voltage(V)
0
5
1
2
3
4
VGS,Gate To Sourcce Voltage(V)
5
ID vs. VGS
ID vs. VDS
2.6
1
Ta=25℃
0.1
150℃
25℃
-55℃
0.01
RDSon On Resistance(Ω)
2.4
IS,Diode Forward Current(A)
ID,Drain Current(A)
0.6
2.2
VGS=5V
2
1.8
VGS=10V
1.6
0.001
1.4
0.3
0.5
0.7
0.9
VSD,Diode Forward Voltage(V)
0
0.4
0.6
ID,Drain Current(A)
0.8
RDS(on) vs. ID
IS vs. VSD
Leshan Radio Company, LTD.
0.2
Rev.A Aug. 2018
3/5
SRK7002LT1G, S-SRK7002LT1G
N-Channel Small Signal MOSFET
5.ELECTRICAL CHARACTERISTICS CURVES(Con.)
3.5
1.8
1.7
VGSTH Threshold Voltage(V)
RDSon On Resistance(Ω)
3
VGS=5.0V,ID=0.05A
2.5
2
VGS=10V,ID=0.5 A
ID=250uA
1.6
1.5
1.4
1.3
1.2
1.5
1.1
1
1
-50
-25
0
25
50
75 100
Tj,Temperature(℃)
125
150
-50
RDS(on) vs. Tj
-25
0
25
50
75 100
Tj,Temperature(℃)
125
150
VGSTH vs. Tj
50
45
f=1.0MHz
Ta=25℃
Capacitor(pF)
40
35
30
25
Ciss
20
15
Coss
10
Crss
5
0
0
20
40
60
VDS(V)
Capacitance
Leshan Radio Company, LTD.
Rev.A Aug. 2018
4/5
SRK7002LT1G, S-SRK7002LT1G
N-Channel Small Signal MOSFET
6.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
DIM MIN
A 0.89
NOM
MAX
MIN
NOM
MAX
0.04
0.044
1
1.11
0.035
A1
0.01
0.06
0.1
0.001 0.002 0.004
b
0.37
0.44
0.5
0.015 0.018
c
0.09
0.13
0.18
0.003 0.005 0.007
D
2.80
2.9
3.04
0.11
E
1.20
1.3
1.4
0.047 0.051 0.055
e
1.78
1.9
2.04
0.07
L
0.10
0.2
0.3
0.004 0.008 0.012
L1
HE
0.35
0.54
0.69
0.014 0.021 0.029
2.10
2.4
2.64
0.083 0.094 0.104
0°
---
10°
θ
0°
0.114
0.02
0.12
0.075 0.081
---
10°
7.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.A Aug. 2018
5/5
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