GB-PT333B22DB

GB-PT333 SERIES Phototransistor (5mm) DESCRIPTION: The PT333 series consists of a NPN silicon phototransistor encapsulated in blue transparent, dark blue or water clear plastic package. The dark blue plastic package which cuts the visible light is suitable for the detection of infrared application. φ5.0 PACKAGE DIMENSIONS Unit: mm Tol: +/- 0.2mm 5.9 ABSOLUTE MAXIMUM RATINGS: (Ta=25 C) Max Parameter 100mW Power Dissipation 30V Collector-Emitter Voltage 5V Emitter-Collector Voltage 20mA Collector Current -40oC To +85oC Operating Temperature Range -55oC To +100oC Storage Temperature Range o Lead Soldering Temperature 1.6mm(.06") from body 260 C for 5 seconds NOTES : 1. All dimensions are in millimeters. 2. Lead spacing is measured where the leads emerge from the package. 3. Protuded resin under flange is 1.5 mm (0.059") Max. 4. Specifications are subject to change without notice. 1.0 Max. 1.0 o 8.6 25.4 Min. 0.5 1.0 2.54 c b o e ELECTRO-OPTICAL CHARACTERISTICS (Ta=25 C) Part No. Lens Color Wave Length of Peak Sensitivity λp (nm) Typ GB-PT333A21C GB-PT333A21BT GB-PT333A21DB GB-PT333A22C GB-PT333A22BT GB-PT333A22DB GB-PT333B21C GB-PT333B21BT GB-PT333B21DB GB-PT333B22C GB-PT333B22BT GB-PT333B22DB Water Clear Blue Transparent Dark Blue Water Clear Blue Transparent Dark Blue Water Clear Blue Transparent Dark Blue Water Clear Blue Transparent Dark Blue 860 400~1200 840~1200 o Range of Spectral Bandwidth λ 0.5 (nm) Typ 400~1200 840~1200 CollectorEmitter Saturation Voltage Max 0.4 Collector Dark Current ID (nA) Max 100 Min On State Collector Current IC (on) Typ Max Angular Response ∆θ(Deg) Typ +20 980 0.70 1.30 1.90 0.54 1.00 1.46 980 400~1200 840~1200 0.4 100 1.40 4.00 6.80 1.08 3.08 5.23 +20 860 400~1200 840~1200 0.4 100 0.70 1.30 1.90 0.54 1.00 1.46 +20 0.4 100 0.70 2.00 3.40 0.54 1.54 2.62 +20 TESTING CONDITION FOR EACH PARAMETER (Ta=25 C) Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Collector Dark Current Rise Time Fall Time On State Collector Current Angular Response Symbol VBR CEO VBR ECO VCE (SAT) ID TR TF IC(ON) ∆θ Unit V V V nA µs µs mA Deg Test Condition Ic=100µA Ee=0mW/cm2 IE=100µA Ee=0mW/cm2 IC=0.1mA H=2.5mW/cm2 VCE=10V Ee=0m/W/cm2 VCC=5V IC=1mA RL=100Ω VCE=5V Ee=1mW/cm2 λ=940nm 0o 10o 20o 30o 1.0 0.9 0.8 40o 50o 60o 0.7 70o 80o 90o 0.5 0.3 0.1 0.2 0.4 0.6 SPATIAL DISTRIBUTION