1N5719

Axial Leaded Glass PIN Diodes Multi Purpose Axial Leaded Glass PIN Diodes RoHs Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ Glass Hermetically Sealed Packages Large Signal Switch Design Available in Low Capacitance Passivated Chip for Low Leakage Current Tape and Reel Packaging Available Fully RoHS Compliant MIL-STD 19500 Screening Available Rev. V6 Glass Package Styles ODS 4, 54 , 139, 146 Description M/A-COM’s series of low and medium power glass PIN diodes are specifically designed for use in switches, duplexers, electrically tuned digital filters AGC attenuators, TR switches and RF modulators. They preform particularly well in distortion sensitive environments from HF through S-Band. These hermetically sealed axial leaded PIN diodes are designed for use in the harshest commercial and military applications where their inherent ruggedness makes them an ideal choice. They may ordered screened to meet MIL-STD 19500 requirements. PIN Chip Glass Cylinder Tin Plated Dumet Leads Absolute Maximum Ratings TAMB = +25°C (Unless Otherwise Noted) 1 Parameter D.C. Reverse Voltage Operating Temperature Storage Temperature Installation Temperature Absolute Maximum (See Tables) -55°C to +175°C -55°C to +200°C +280°C for 10 Seconds Design Recommendations The axial leaded, glass, PIN diode series is available in four glass package styles. The ODS 54 is the most suitable to meet low power, low capacitance requirements for high isolation in a series connected switch at VHF frequencies. The ODS 4, 139 and 146 are most suited for moderate power applications requiring low package inductance. Power Dissipation Listed Below Will De-Rate Linearly to 0mW at 175˚C 250mW without heatsink Case Style 54 @ +25°C 500mW without heatsink Case Style 139 @ +25°C 1000mW without heatsink Case Style 4 & 146 @ +25°C Notes 1. Operation of this device above any one of these parameters may cause permanent damage. 1 M/A-COM’s silicon PIN diode chips are also available in a wide variety of alternative package styles besides glass. For case style options, availability and electrical specifications, please refer to the “Packaged PIN Diode Datasheet” located on the M/A-COM website at : www.macom.com/DataSheets/packagedpindiodes.pdf ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Axial Leaded Glass PIN Diodes Multi Purpose Axial Leaded Glass PIN Diodes RoHs Compliant Rev. V6 Unless otherwise noted Part Number Unless otherwise noted Max. Series Res. 100MHz RS @ 10mA Ω Nominal Characteristics Carrier 4 Lifetime μS I Region Length Mils Package Style 54 54 54 54 54 54 Rev. Volt. VR < 10 µA VDC 5 Max. Cap. 1MHz CT @ -50V pF MA47120 1N5719 MA4P203 MA47047 MA47600 MA4P404 35 100 100 200 200 250 Rev. Volt.5 1.00 0.35 1 0.5 1.5 1.5 3.0 6.0 .60 2 2 0.25 0.30 0.30 0.30 3 Part Number MA4PH151 MA47110 MA47123 Package Style 139 139 139 Max. Cap. 1MHz CT @ -50V pF 1.20 0.55 0.50 Max. Cap. 1MHz CT @ -50V pF 1.50 1.10 Max. Cap. 1MHz CT @ -100V pF 0.35 0.50 0.85 0.70 Max. Series Res. 100MHz RS @ 10mA Ω 0.6 6.0 3.0 Max. Series Res. 100MHz RS @ 50mA Ω 0.6 1.0 Max. Series Res. 100MHz RS @ 100mA Ω 0.60 0.45 0.30 0.70 VR < 10 µA VDC 100 200 200 Rev. Volt.5 3.0 0.4 1.0 2.0 0.1 0.8 1.0 2.0 2.0 4.0 1.0 1.0 Nominal Characteristics Carrier I Region Lifetime4 Length μS Mils Part Number MA47266 MA4PH301 Package Style 146 146 VR < 10 µA VDC 200 200 Rev. Volt.5 1.0 0.8 2.0 4.0 1.0 2.0 Nominal Characteristics Carrier I Region Lifetime4 Length μS Mils 3.0 3.0 5.0 5.0 Nominal Characteristics Carrier Lifetime4 μS 1.0 2.0 3.0 4.0 I Region Length Mils 2.0 2.0 2.0 4.0 Part Number Package Style 4 4 4 4 VR < 10 µA VDC 500 500 500 1000 MA4P504 MA4P505 MA4P506 MA4P606 Notes: 1. Tested at VR = 20V. 2. Tested at IF = 50mA. 3. Tested at VR = 10V. 4. Nominal carrier lifetime, TL, specified at IF = + 10mA , IREV = - 6mA. 5. Minimum specified reverse voltage, VR, is sourced and the resultant reverse leakage current, IR, is measured to be