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AM42-0040

AM42-0040

  • 厂商:

    MA-COM

  • 封装:

  • 描述:

    AM42-0040 - GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz - M/A-COM Technology Solutions, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
AM42-0040 数据手册
AM42-0040 GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz Features • • • • • • High Linear Gain: 30 dB Typical High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 26% Typ. 50 Ω Input/Output Broadband Matched Lead-Free Ceramic Bolt Down Package RoHS* Compliant and 260°C Reflow Compatible Rev. V4 Functional Schematic N/C GND VDD GND Description M/A-COM’s AM42-0040 is a three-stage MMIC power amplifier in a lead-free, ceramic bolt down style hermetic package. The AM42-0040 employs an internally matched monolithic chip with internally decoupled Gate and Drain bias networks. The AM42-0040 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications. The AM42-0040 is designed for use as an output stage or driver amplifier for C-band VSAT transmitter systems. This amplifier employs a fully monolithic chip and requires a minimum of external components. M/A-COM’s AM42-0040 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications. RFIN GND VGG RFOUT VDET N/C Pin Configuration Pin No. 1 2 3 4 5 6 7 Pin Name N/C GND RF In GND VGG N/C VDET RF Out GND VDD Description No Connection DC and RF Ground RF Input DC and RF Ground Gate Supply No Connection Detector RF Output DC and RF Ground Drain Supply Ordering Information Part Number AM42-0040 Package Ceramic Bolt Down Package 8 9 10 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. AM42-0040 GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz Electrical Specifications: TA = 25°C, VDD = +9 V, VGG adjusted for IDD = 1050 mA Parameter Linear Gain Input VSWR Output VSWR Output Power Output Power vs. Frequency Output Power vs. Temperature (with respect to TA = 25°C) Drain Bias Current Gate Bias Voltage Gate Bias Current Thermal Resistance Second Harmonic Third Harmonic VDET Test Conditions PIN < -10 dBm PIN < -10 dBm PIN < -10 dBm PIN = +10 dBm, IDD = 1050 mA Typ. PIN = +10 dBm, IDD = 1050 mA Typ. PIN = +10 dBm, IDD = 1050 mA Typ. TA = -40°C to +70°C PIN = +10 dBm PIN = +10 dBm, IDD = 1050 mA Typ. PIN = +10 dBm, IDD = 1050 mA Typ. 25°C Heat Sink PIN = +10 dBm, IDD = 1050 mA Typ. PIN = +10 dBm, IDD = 1050 mA Typ. Units dB Ratio Ratio dBm dB dB mA V mA °C/W dBc dBc V Min. 27 — — 31.7 — — 900 -2.4 — — — — 2 Typ. 30 2.3:1 3.0:1 33.0 1.0 ±0.4 1050 -1.2 5 5.6 -35 -45 — Max. — 2.7:1 — 34.5 1.5 — 1100 -0.4 20 — — — — Rev. V4 Absolute Maximum Ratings 1,2,3 Parameter Input Power VDD VGG VDD - VGG IDD Channel Temperature Storage Temperature Absolute Maximum +23 dBm +12 Volts -3 Volts +12 Volts 1700 mA -40°C to +85°C -65°C to +150°C Typical Bias Configuration4,5,6,7,8 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these survivability limits. 3. Case Temperature (TC) = +25°C. 4. Nominal bias is obtained by first connecting -2.4 volts to pin 5 (VGG), followed by connection +9 volts to pin 10 (VDD). Note sequence. Adjust VGG for a drain current of 1050 mA typical. 5. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 6. No DC bias voltage appears at the RF ports. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of the VDD leads. 8. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0040. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. AM42-0040 GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz Typical Performance Curves @ +25°C Linear Gain vs. Frequency 40 30 20 10 0 -20 Rev. V4 Input and Output Return Loss vs. Frequency 0 -5 -10 -15 -10 -20 -30 -40 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 -25 -30 -35 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 S11 S22 Frequency (GHz) Output Power vs. Frequency @ PIN = +10 dBm 35 30 25 20 Frequency (GHz) PAE vs. Frequency @ PIN = +10 dBm 30 25 20 15 15 10 5 0 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 10 5 0 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 Frequency (GHz) Output Power vs. Input Power @ 6.15 GHz 35 34 33 32 31 30 0 2 4 6 8 10 12 14 Frequency (GHz) PAE vs. Input Power @ 6.15 GHz 25 20 15 10 5 0 0 2 4 6 8 10 12 14 P (dBm) IN P (dBm) IN 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. AM42-0040 GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz Lead-Free CR-15† Handling Procedures Please observe the following precautions to avoid damage: Rev. V4 Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.
AM42-0040
1. 物料型号: - 型号为AM42-0040。

2. 器件简介: - M/A-COM的AM42-0040是一款三级MMIC功率放大器,采用无铅、陶瓷螺栓固定式密封封装。 - 该器件采用内部匹配的单片芯片,具有内部去耦的栅极和漏极偏置网络。 - 设计用于从恒定电流漏极供电器操作,并且通过变化栅极偏置电压,可以为不同应用定制饱和输出功率性能。

3. 引脚分配: - 引脚1: N/C(无连接) - 引脚2: GND(直流和射频地) - 引脚3: RF In(射频输入) - 引脚4: GND(直流和射频地) - 引脚5: VGG(栅极供电) - 引脚6: N/C(无连接) - 引脚7: VDET(检测器) - 引脚8: RF Out(射频输出) - 引脚9: GND(直流和射频地) - 引脚10: VDD(漏极供电)

4. 参数特性: - 典型线性增益:30 dB - 典型饱和输出功率:+33 dBm - 典型功耗增益:26% - 50 Ω 输入/输出宽带匹配 - 无铅陶瓷螺栓固定封装,符合RoHS并兼容260°C回流焊

5. 功能详解应用信息: - 设计用于作为C波段VSAT发射机系统的输出级或驱动放大器。 - 该放大器采用全单片芯片,并需要最少的外部组件。

6. 封装信息: - 封装类型为Ceramic Bolt Down Package(陶瓷螺栓固定封装)。
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