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AT-635

AT-635

  • 厂商:

    MA-COM

  • 封装:

  • 描述:

    AT-635 - Voltage Variable Absorptive Attenuator 35 dB, DC - 2.0 GHz - M/A-COM Technology Solutions, ...

  • 详情介绍
  • 数据手册
  • 价格&库存
AT-635 数据手册
AT-635 Voltage Variable Absorptive Attenuator 35 dB, DC - 2.0 GHz Features • • • • • • • 35 dB Voltage Variable Attenuation at 1 GHz Single Voltage Control: 0 to -4 Volts Low DC Power Consumption Nanosecond Switching Speed Temperature Range: -40°C to +85°C SOIC-14 Plastic Package Tape and Reel Packaging Available Rev. V7 Functional Schematic 14 13 12 11 10 9 8 Description M/A-COM’s AT-635 is a GaAs MMIC voltage variable absorptive attenuator in a low cost SOIC 14-lead surface mount plastic package. The AT-635 is ideally suited for use where attenuation fine tuning, fast switching and very low power consumption are required. Typical applications include radio, cellular, GPS equipment and other automatic gain/level control circuits. The AT-635 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability. 1,2 1 2 3 4 5 6 7 Pin Configuration Pin No. 1 2 3 4 5 Function VC Ground Ground Ground Ground Ground Ground Pin No. 8 9 10 11 12 13 14 Function RF2 Ground Ground Ground Ground Ground RF1 Ordering Information Part Number AT-635 AT-635TR AT-635SMB 6 Package Bulk Packaging Tape and Reel Sample Board 7 Absolute Maximum Ratings 3,4 Parameter Input Power Control Voltage Operating Temperature Storing Temperature Absolute Maximum +21 dBm -8.5 V < VC < +5 V -40°C to +85°C -65°C to +150°C 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. M/A-COM does not recommend sustained operation near these survivability limits. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. AT-635 Voltage Variable Absorptive Attenuator 35 dB, DC - 2.0 GHz Electrical Specifications: TA = 25°C, Z0 = 50 Ω Parameter Insertion Loss Test Conditions5 DC - 0.5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 10 dB Attenuation – DC - 2.0 GHz 20 dB Attenuation – DC - 2.0 GHz 30 dB Attenuation – DC - 2.0 GHz Units dB dB dB dB dB dB Ratio 10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, 50% Control to 10% RF In Band Linear Operation Absolute maximum Input Power 0.05 GHz 0.5 - 2.0 GHz Measured Relative to Input Power (For two-tone Input Power Up to +5 dBm) 0.05 GHz 0.5 - 2.0 GHz Measured Relative to Input Power (For two-tone Input Power Up to +5 dBm) nS nS mV dBm dBm dBm dBm Min. — — — — — — — — — — — — — — Typ. 6.7 7.2 7.5 + 1.0 + 1.2 + 1.2 2.0:1 2 4 30 — — 34 47 Max. 7.0 7.4 7.8 + 1.3 + 1.5 + 1.5 — — — — 13 21 — — Rev. V7 Flatness (Peak to Peak) VSWR Trise, Tfall Ton, Toff Transients Power Handling IP2 IP3 dBm dBm 18 18.5 316 366 — — 5. Control voltage: 0 to -4 volts @ 20 µA typical. 6. For levels above 6 dB attenuation. For levels below 6 dB, the minimum specification numbers apply. SOIC-14† † Meets JEDEC moisture sensitivity level 1 requirements. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. AT-635 Voltage Variable Absorptive Attenuator 35 dB, DC - 2.0 GHz Typical Performance Curves Insertion Loss vs. Frequency 12 +25°C -40°C +85°C Rev. V7 Attenuation vs. Control Voltage, F = 1 GHz 40 10 30 8 6 20 4 10 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 Frequency (GHz) Control Voltage (V) Attenuation vs. Frequency 50 VSWR vs. Frequency 3.5 Insertion Loss 5 dB Atten 10 dB Atten 35 dB Atten 40 3.0 30 2.5 20 2.0 10 1.5 0 0.0 1.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency (GHz) Frequency (GHz) Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.
AT-635
1. 物料型号: - AT-635:散装封装。 - AT-635TR:胶带和卷轴封装。 - AT-635SMB:样品板封装。

2. 器件简介: AT-635是一款砷化镓MMIC电压可变吸收式衰减器,采用低成本SOIC 14引脚表面贴装塑料封装。该器件非常适合需要精细调节衰减、快速切换和极低功耗的应用场合。

3. 引脚分配: | 引脚编号 | 功能 | | ------- | ----- | | 1 | Vc | | 2 | 地 | | 3 | 地 | | 4 | 地 | | 5 | 地 | | 6 | 地 | | 7 | 地 | | 8 | RF2 | | 9 | 地 | | 10 | 地 | | 11 | 地 | | 12 | 地 | | 13 | 地 | | 14 | RF1 |

4. 参数特性: - 35 dB电压可变衰减,频率范围DC至2.0 GHz。 - 单电压控制:0至-4伏特。 - 低直流功耗。 - 纳秒级切换速度。 - 温度范围:-40°C至+85°C。 - 提供SOIC-14塑料封装和胶带及卷轴包装。

5. 功能详解: AT-635采用成熟的1微米工艺制造,整个芯片采用全芯片钝化,以提高性能和可靠性。

6. 应用信息: 典型应用包括无线电、蜂窝、GPS设备以及其他自动增益/电平控制电路。

7. 封装信息: - SOIC-14塑料封装。 - 符合JEDEC潮湿敏感度等级1的要求。
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