LF2810A

LF2810A RF Power MOSFET Transistor 10W, 500-1000MHz, 28V Features M/A-COM Products Released; RoHS Compliant Package Outline • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications Broadband linear operation 500 MHz to 1200 MHz Parameter Symbol VDS VGS IDS PD TJ TSTG θJC Rating 65 20 2.8 26.5 200 -55 to +150 6.6 Units V V A W °C °C °C/W LETTER DIM A MILLIMETERS MIN 20.70 14.35 13.72 6.27 6.22 6.22 1.14 2.92 1.40 1.96 3.61 .08 MAX 20.96 14.61 14.22 6.53 6.48 6.48 1.40 3.18 1.65 2.46 4.37 .15 INCHES MIN .815 .565 .540 .247 .245 .245 .045 .115 .055 .077 .142 .003 MAX .825 .575 .560 .257 .255 .255 .055 .125 .065 .097 .172 .006 ABSOLUTE MAXIMUM RATINGS AT 25° C Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance TYPICAL DEVICE IMPEDANCE F (MHz) 500 1000 1200 ZIN (Ω) 0.60 - j9.5 1.4 - j1.0 1.5 - j3.5 ZLOAD (Ω) 10.0 +j17.0 4.85 + j7.9 5.7 + j5.7 B C D E F G H J K L M VDD = 28V, IDQ = 100 mA, POUT = 10 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Symbol BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS GP ŋD VSWR-T Min 65 2.0 160 10 50 Max 2.0 2.0 6.0 14 10 4.8 20:1 Units V mA µA V mS pF pF pF dB % - Test Conditions VGS = 0.0 V , IDS = 4.0 mA VGS = 28.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 20.0 mA VDS = 10.0 V , IDS 200.0 mA , 80-30 μs Pulse VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDD = 28.0 V, IDQ = 100 mA, POUT = 10.0 W, F =1.0 GHz VDD = 28.0 V, IDQ = 100 mA, POUT = 10.0 W, F =1.0 GHz VDD = 28.0 V, IDQ = 100 mA, POUT = 10.0 W, F =1.0 GHz 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. LF2810A RF Power MOSFET Transistor 10W, 500-1000MHz, 28V Typical Broadband Performance Curves CAPACITANCES VS VOLTAGE F =1.0MHz POWER OUTPUT (W) CISS COSS M/A-COM Products Released; RoHS Compliant POWER OUTPUT VS VOLTAGE F =1.0 GHz PIN=1.0 W IDQ=100 mA 14 12 CAPACITANCE (pF) 10 8 6 4 2 0 5 12 10 8 6 4 2 0 5 CRSS 10 15 VPS (v) 20 25 30 10 15 20 VDS (V) 25 30 35 20 15 GAIN (dB) 10 5 0 500 GAIN VS FREQUENCY VDD=28 V IDQ=100 mA POUT=10 W 55 EFFICIENCY VS FREQUENCY VDD =28 V IDQ =100 mA Pout =10 W EFFICIENCY (%) 50 45 700 FREQUENCY (MHz) 1000 1200 40 500 750 1000 FREQUENCY (MHz) 1250 1400 POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =50 mA 14 POWER OUTPUT (W) 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 500MHz 1000 MHz 1400 MHz POWER INPUT (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. LF2810A RF Power MOSFET Transistor 10W, 500-1000MHz, 28V TEST FIXTURE CIRCUIT DIMENSIONS M/A-COM Products Released; RoHS Compliant TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.