MAPRST1214-30UF
Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty
Features
• • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant
M/A-COM Products Released, 30 May 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature
Symbol
VCES VEBO IC PTOT TSTG TJ
Rating
70 3.0 5.0 145 -65 to +200 200
Units
V V A W °C °C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter Test Conditions Frequency Symbol
BVCES ICES F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz RTH(JC) POUT GP ΔG
Min
70 30 7.5 45 -
Max
2.0 1.2 1.25 -9 0.5 3:1 1.5:1
Units
V mA °C/W W dB dB % dB dB -
Collector-Emitter Breakdown Voltage IC = 10mA Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Gain Flatness Collector Efficiency Input Return Loss Pulse Droop Load Mismatch Tolerance Load Mismatch Stability 1 VCE = 40V Vcc = 36V, Pin = 5.3W Vcc = 36V, Pin = 5.3W Vcc = 36V, Pin = 5.3W Vcc = 36V, Pin = 5.3W Vcc = 36V, Pin = 5.3W Vcc = 36V, Pin = 5.3W Vcc = 36V, Pin = 5.3W Vcc = 36V, Pin = 5.3W Vcc = 36V, Pin = 5.3W
ηC
RL Droop VSWR-T VSWR-S
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MAPRST1214-30UF
Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products Released, 30 May 07
Typical RF Performance
Freq. (GHz) 1.2 1.3 1.4 Pin (W) 5.3 5.3 5.3 Pout (W) 39.4 39.7 39.9 Gain (dB) 8.71 8.75 8.77 Ic (A) 2.08 1.98 1.92 Eff (%) 52.6 55.6 57.8 Droop (dB) 0.24 0.20 0.17 RL (dB) -12.3 -14.6 -15.0 VSWR-S (1.5:1) S S S VSWR-T (3:1) P P P
Gain vs. Frequency
9.0
Collector Efficiency vs. Frequency
65 Efficiency (%) 60 55 50 45 1.20
Gain (dB)
8.5 8.0 7.5 7.0 1.20
1.25
1.30 Fre q (GHz)
1.35
1.40
1.25
1.30 Fre q (GHz)
1.35
1.40
RF Test Fixture Impedance
F (GHz) 1.2 1.3 1.4 ZIF (Ω) 6.7 - j6.9 6.5 - j6.5 6.3 - j4.5 ZOF (Ω) 14.3 + j2.4 11.2 - j0.8 7.2 - j0.1
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MAPRST1214-30UF
Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty
Test Fixture Circuit Dimensions
M/A-COM Products Released, 30 May 07
Test Fixture Assembly
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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