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MASW-004100-11930W

MASW-004100-11930W

  • 厂商:

    MA-COM

  • 封装:

  • 描述:

    MASW-004100-11930W - HMIC™ Silicon PIN Diode Switch - M/A-COM Technology Solutions, Inc.

  • 数据手册
  • 价格&库存
MASW-004100-11930W 数据手册
MASW-004100-1193 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 Features ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling Description The MASW-004100-1193 is a SP4T series-shunt broad band switch made with M/A-COM’s unique HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies. Applications These high performance switches are suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50nS switching speeds are achieved. J3 J4 Absolute Maximum Ratings TAMB = +25°C ( Unless Otherwise Specified ) J2 J5 Parameter Operating Temperature Storage Temperature RF C.W. Incident Power (± 20mA) Bias Current ( Forward ) Applied Voltage ( Reverse ) Value -65°C to +125°C -65°C to +150°C +33dBm ± 20mA -25 Volts J1 Notes: Exceeding these limits may cause permanent damage. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 Typical Driver Connections Condition of RF Output J1-J2 Low Loss Isolation Isolation Isolation Condition of RF Output J1-J3 Isolation Low Loss Isolation Isolation Condition of RF Output J1-J4 Isolation Isolation Low Loss Isolation Condition of RF Output J1-J5 Isolation Isolation Isolation Low Loss Control Level ( DC Current ) at Port J2 -20mA +20mA +20mA +20mA J3 +20mA -20mA +20mA +20mA J4 +20mA +20mA -20mA +20mA J5 +20mA +20mA +20mA -20mA Electrical Specifications @ TAMB = +25oC, ± 20mA Bias Current (On-Wafer Measurements) Parameter Insertion Loss Isolation Input Return Loss Output Return Loss Switching Speed 1 Frequency 20 GHz 20 GHz 20 GHz 20 GHz 10 GHz Minimum 28 Nominal 0.9 34 15 15 50 Maximum 1.3 Units dB dB dB dB nS Notes: Typical switching speed is measured from 10% to 90% of detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390pF – 560pF and a resistor between 150Ω – 220Ω to achieve 50nS rise and fall times. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 Operation of the MASW-004100-1193 PIN Switch Operation of the MASW-004100-1193 PIN switch is achieved by the simultaneous application of negative DC current to the low loss port and positive DC current to the remaining isolated switching ports as shown in Figure 1. The backside area of the die is the RF and DC return ground plane. The DC return is achieved on the common port, J1. The DC control currents should be supplied by constant current source. The voltages at these points will not exceed ±1.5 volts (1.2 volts typical) for supply currents up to ±20 mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. For all the isolated ports, the shunt diode is forward biased and the series diode is reverse biased. The bias network design should yield > 30 dB RF to DC isolation. Best insertion loss, P1dB, IP3, and switching speed are achieved by using a voltage pull-up resistor in the DC return path, J1. A minimum value of |-2V| is recommended at this return node, which is achievable with a standard, 2 – 18 GHz Bias Network Schematic J1 39 pF 22 pF DC Bias 22nH 39 pF 100 Ω 22nH HMIC Switch Die J5 22 pF J2 J4 Fig. 1 3 J3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 Typical Microwave Performance MASW-004100-1193 INSERTION LOSS 0.0 Loss (dB) -0.5 -1.0 -1.5 -2.0 0.0 5.0 10.0 15.0 Frequency (GHz) 20.0 25.0 30.0 J1-J2 J1-J3 J1-J4 J1-J5 MASW-004100-1193 INPUT RETURN LOSS 0 -10 R. Loss (dB) -20 J1-J2 -30 -40 -50 -60 0 5 10 15 20 25 30 J1-J3 J1-J4 J1-J5 Frequency (GHz) 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 Typical Microwave Performance MASW-004100-1193 OUTPUT RETURN LOSS 0 -5 R. Loss(dB) -10 -15 -20 -25 -30 -35 0 5 10 15 Frequency (GHz) 20 25 30 J2 J3 J4 J5 MASW-004100-1193 ISOLATION 0 -10 -20 Isolation (dB) -30 -40 -50 -60 -70 -80 -90 0 5 10 15 Frequency (GHz) 20 25 30 J1-J2 J1-J3 J1-J4 J1-J5 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 ASSEMBLY INSTRUCTIONS Cleanliness These chips should be handled in a clean environment free of organic contamination. Electro-Static Sensitivity The MASW-00 Series PIN switches are ESD, Class 1A sensitive (HBM). The proper ESD handling procedures must be used. Wire Bonding Thermosonic wedge wire bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is recommended. A stage temperature of 150°C and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required to achieve a good bond. RF wire and ribbon bonds should be kept as short as possible to minimize parasitic inductance. Mounting These chips have Ti-Pt-Au back metal. They can be die mounted with a 80Au/20Sn or electrically conductive Ag epoxy. Mounting surface must be flat and clean of oils and contaminants. Eutectic Die Attachment An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255°C and a tool tip temperature of 265°C. When hot gas is applied, the tool tip temperature should be 290°C. The chip should not be exposed to temperatures greater than 320°C for more than 10 seconds. No more than 3 seconds should be required for the die attachment. Silver Epoxy Die Attachment Assembly should be preheated to 125°C-150°C. A Controlled thickness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure complete coverage. Cure epoxy per manufacturer’s recommended schedule. 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 MASW-004100-1193 Chip Dimensions DIM A B C D E F G H I J Thickness Bond Pads INCHES NOMINAL .066 .047 .054 .012 .043 .009 .004 .004 .033 .061 .005 .005X.005 MM NOMINAL 1.67 1.19 1.37 0.31 1.08 0.22 0.11 0.11 0.84 1.56 .120 0.120X.0120 Notes: 1. 2. Topside and backside metallization is gold , 2.5mm thick typical. Yellow areas indicate wire bonding pads Ordering Information Part Number MASW-004100-11930W MASW-004100-11930G 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. Package Waffle Pack Gel Pack changes to the product(s) or information contained herein without notice.
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