MASW4030G

MASW4030G GaAs SPDT Switch DC - 4.0 GHz Features • • • • • • Absorbtive or Reflective Excellent Intermodulation Products Excellent Temperature Stability Fast Switching Speed: 3 nS Typical Ultra Low DC Power Consumption Independent Bias Control Rev. V3 Pad Layout G1 G1 RF G1 Description M/A/COM’s MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4030G is fabricated using a mature 1micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability. RF1 B T RF2 A T BC AC G2 G2 Die Size - Inches (mm) 0.042 x 0.040 x 0.010 (1.065 x 1.015 x 0.25) Ordering Information Part Number MASW4030G Bond Pad Dimensions Package DIE Bond Pad G1 RF1, RF2 Dimensions - Inches (mm) 0.004 x 0.008 (0.100 x 0.200) 0.004 x 0.008 (0.100 x 0.200) 0.0065 x 0.13 (0.165 x 0.330) 0.004 x 0.004 (0.100 x 0.100) 0.008 x 0.006 (0.200 x 0.150) Absolute Maximum Rating1,2 Parameter Control Value (A or B) Max Input RF Power Storage Temperature Max Operating Temperature T A, B, Ac, Bc, G2 RF Absolute Maximum -8.5 Vdc +34.0 dBm (500 MHz - 4 GHz) -65°C to +175°C +175°C Schematic 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these survivability limits. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW4030G GaAs SPDT Switch DC - 4.0 GHz Electrical Specifications : TA = 25°C, Z0 = 50 Ω, -55°C to +85°C Parameter Insertion Loss Rev. V3 Test Conditions DC - 1.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 1.0 GHz Absorbtive Mode DC - 2.0 GHz Reflective Mode DC - 2.0 GHz DC - 4.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 4.0 GHz 0.05 GHz (0 / -5 V, 0 / -8 V) 0.5 - 4.0 GHz (0 / -5 V, 0 / -8 V) Two Tone Input Power up to +5 dBm 0.05 GHz 0.05 - 4.0 GHz Two Tone Input Power up to +5 dBm 0.05 GHz 0.05 - 4.0 GHz VIN Low (0 to - 0.2 V) VIN High (-5 V @ 25 µA Typ. to -8 V) 10% to 90% RF and 90% to 10% RF 50% control to 90% RF, and 50% control to 10% RF Units dB dB dB dB dB dB dB Ratio Ratio Ratio dBm dBm dBm dBm dBm dBm µA µA nS nS Min. — — — 60 50 42 40 — — — — — — — — — — — — — Typ. — — — — — — — — — — +24, +25 +30, +33 62 68 39 46 9 75 3 6 Max. 0.6 0.8 1.0 — — — — 1.2:1 1.2:1 1.5:1 — — — — — — — — — — Isolation VSWR Input P-1dB IP2 IIP3 Control Current T-rise, T-fall TON, TOFF Truth Table Condition of Switch Absorbtive SPDT Reflective Control Inputs A V IN Low V IN Hi V IN Low Condition of Bond Pad G2 — — GND B V IN Hi V IN Low V IN Hi T GND GND — G1 GND GND GND RF1 On Off On RF2 Off On Off Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW4030G GaAs SPDT Switch DC - 4.0 GHz Typical Performance @ 25°C Insertion Loss 1.00 IL (Reflect) 0.75 IL (Absorb) Rev. V3 Handling Precautions Permanent damage to the MASW4030G may occur if the following precautions are not adhered to: A. Cleaniness—MASW4030G should be handled in a clean environment. DO NOT attempt to clean unit after the MASW3040G is installed. B. Static Sensitivity—All chip handling equipment and personnel should be DC grounded. C. Transient—Avoid instrument and power supply transients while bias is applied to the MASW4030G. Use shielded signal and bias cables to minimize inductive pick-up. D. Bias—Apply voltage to either of the complementary control ports only when the other is grounded. No port should be allowed to “float”. E. General Handling—It is recommended that the MASW4030G chip be handled along the long side of the die with a sharp pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers. 0.50 0.25 0.00 0 1 2 3 4 Frequency (GHz) Isolation 75 70 65 60 55 50 45 40 35 0 1 2 3 4 Isolation (Absorb) Isolation (Reflect) Frequency (GHz) VSWR 1.5 VSWR (Absorb) 1.4 VSWR (Reflect) 1.3 1.2 1.1 1.0 0 1 2 3 4 Frequency (GHz) 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW4030G GaAs SPDT Switch DC - 4.0 GHz Mounting The MASW4030G is back-metallized with pd/ni/au (100/1,000, 10,000 Å) metallization. It can be diemounted with AuSn eutectic preforms or with thermally conductive epoxy. The package surface should be clean and flat before attachment. Eutectic Die Attach: A. A 80/20 gold/tin preform is recommended with a work surface temperature of approximately 255°C and a tool temperature of 265°C. When not 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290°C. B. DO NOT expose the MASW4030G to a temperature greater than 320°C for more than 20 seconds. No more than 3 seconds for scrubbing should be required for attachment. Epoxy Die Attach: A. Apply a minimum amount of epoxy and place the MASW4030G into position. A thin epoxy fillet should be visible around the perimeter of the chip. B. Cure epoxy per manufacturer’s recommended schedule. C. Electrically conductive epoxy may be used by is not required. Rev. V3 Wire Bonding A. Ball or wedge with 1.0 mil diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150°C and a ball bonding force of 40 to 50 grams or wedge bonding force o1 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels achieve reliable wirebonds. B. Wirebonds should be started on the chip and terminated on the package. GND bonds should be as short as possible; at least three and no more than four bond wires from ground pads to package are recommended. 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.