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MASW4060G

MASW4060G

  • 厂商:

    MA-COM

  • 封装:

  • 描述:

    MASW4060G - GaAs SP4T Switch DC - 4.0 GHz - M/A-COM Technology Solutions, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
MASW4060G 数据手册
MASW4060G GaAs SP4T Switch DC - 4.0 GHz Features • • • • • Low Insertion Loss, 1.2 dB Typical Fast Switching Speed, 4 nS Typical Ultra Low DC Power Consumption Terminated Option RoHS* Compliant Rev. V4 Pad Layout Description M/A-COM’s MASW4060G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4060G is fabricated using a mature 1micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability. Die Size - Inches (mm) 0.076 x 0.058 x 0.010 (1.920 x 1.470 x 0.25) Absolute Maximum Rating2,3 Parameter Control Value (A or B) Ordering Information Part Number MASW4060G 1. Die quantity varies. Absolute Maximum -8.5 Vdc +34 dBm -65°C to +175°C +175°C Package DIE 1 Max Input RF Power Storage Temperature Max Operating Temperature Schematic 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. Bond Pad Dimensions Bond Pad RF RF1, RF2, RF3, RF4 A1, A2, A3, A4 B1, B2, B3, B4 G1, G2, G3, G4 T1, T2, T3, T4 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 4 Dimensions - Inches (mm) 0.005 x 0.005 (0.125 x 0.125) 0.004 x 0.004 (0.100 x 0.100) 0.004 x 0.004 (0.100 x 0.100) 0.004 x 0.004 (0.100 x 0.100) 0.008 x 0.004 (0.200 x 0.100) 0.006 x 0.005 (0.150 x 0.125) 5 4. “G” pads designate internal grounds necessary to maintain data sheet isolation. These are not DC blocked and would need to be blocked if positive control voltage is required. 5. “T” pads denote a 50 Ω termination path connected to each RFx port. If bonded to ground, it will cause the related port to be absorptive, or matched, in the isolated condition. As described in note 4, these pads are also not DC blocked. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW4060G GaAs SP4T Switch DC - 4.0 GHz Electrical Specifications: 0/-5 Vdc, 50 Ω, -55°C to +85°C 6 Parameter Insertion Loss Rev. V4 Test Conditions DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 4.0 GHz 0.5 GHz 0.5 - 4.0 GHz Two Tone Input Power up to +5 dBm 0.5 GHz 0.5 - 4.0 GHz Two Tone Input Power up to +5 dBm 0.5 GHz 0.5 - 4.0 GHz VIN Low (0 to –0.2 V) VOUT High (-5 V) 10% to 90% RF and 90% to 10% RF 50% control to 90% RF, and 50% control to 10% RF In Band Units dB dB dB dB dB dB dB dB Ratio Ratio Ratio Ratio dBm dBm dBm dBm dBm dBm µA µA nS nS mV Min. — — — — 50 45 40 30 — — — — — — — — — — — — — — — Typ. — — — — — — — — — — — — +17 +27 +45 +60 +35 +46 — 50 2 4 20 Max. 1.3 1.3 1.3 1.7 — — — — 1.4:1 1.4:1 1.5:1 2.0:1 — — — — — — 25 200 — — — Isolation VSWR Input P-1dB IP2 IP3 Control Current T-rise, T-fall TON, TOFF Transients Truth Table 1 0 0 0 0 1 1 1 0 1 0 0 1 0 1 1 6. Loss changes ±0.0025 dB/°C. (From -55°C to +85°C) 7 Wire Bonding Off Off On Off Off Off Off On ANT- ANT- ANT- ANTA1 B1 A2 B2 A3 B3 A4 B4 RF1 RF2 RF3 RF4 0 0 1 0 1 1 0 1 0 0 0 1 1 1 1 0 On Off Off Off Off On Off Off 7. 0 = 0 V to –0.2 V, 1 = -5 V. Handling Procedures Please observe the following precautions to avoid damage: A. Ball or wedge with 1.0 mil diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150°C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels achieve reliable wirebonds. B. Wirebonds should be started on the chip and terminated on the package. GND bonds should be as short as possible; at least three and no more than four bond wires from ground pads to package are recommended. Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW4060G GaAs SP4T Switch DC - 4.0 GHz Typical Performance @ 25°C Insertion Loss 2.0 Rev. V4 Handling Precautions Permanent damage to the MASW4060 may occur if the following precautions are not adhered to: A. Cleanliness - The MASW4060 should be handled in a clean environment. DO NOT attempt to clean unit after MASW4060 is installed. B. Static Sensitivity - All chip handling equipment and personnel should be DC grounded. C. Transient - Avoid instrument and power supply transients while bias is applied to the MASW4060. Use shielded signal and bias cables to minimize inductive pick-up. D. Bias - Apply voltage to either control port V1 or V2 only when the other is grounded. No port should be allowed to “float.” E. General Handling - It is recommended that the MASW4060 chip be handled along the long side of the die with a sharp pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers. 1.5 1.0 0.5 0.0 0 1 2 3 4 Frequency (GHz) Isolation 65 60 55 50 45 40 35 0 1 2 3 4 Mounting The MASW4060 is back-metallized with Pd/Ni/Au (100/1,000/10,000Å) metallization. It can be diemounted with AuSn eutectic performs or with thermally conductive epoxy. The package surface should be clean and flat before attachment. Eutectic Die Attach: A. A 80/20 gold/tin perform is recommended with a work surface temperature or approximately 225°C and a tool temperature of 265°C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290°C. B. DO NOT expose the MASW4060 to a temperature greater than 320°C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: A. Apply a minimum amount of epoxy and place the MASW4060 into position. A thin epoxy fillet should be visible around the perimeter of the chip. B. Cure epoxy per manufacturer’s recommended schedule. C. Electrically conductive epoxy may be used but is not required. Frequency (GHz) VSWR 1.4 1.3 1.2 1.1 1.0 0 1 2 3 4 Frequency (GHz) 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.
MASW4060G
1. 物料型号: - 型号:MASW4060G - 封装:DIE(裸片)

2. 器件简介: - MASW4060G是M/A-COM公司生产的SPDT(单极双掷)GaAs MESFET MMIC开关,适用于4.0 GHz以下的电路设计。该器件结合了小尺寸、低插入损耗和低功耗以及高隔离度的特点,非常适合多种应用场景和模块使用。

3. 引脚分配: - 控制值(A或B):-8.5 Vdc - 最大输入RF功率:+34 dBm - 存储温度:-65°C至+175°C - 最大工作温度:+175°C - 焊盘尺寸: - RF:0.005x 0.005 英寸 (0.125x 0.125 毫米) - RF1-RF4,A1-A4,B1-B4:0.004x 0.004 英寸 (0.100 x 0.100 毫米) - G1-G4:0.008 x 0.004 英寸 (0.200 x 0.100 毫米) - T1-T4:0.006 x 0.005 英寸 (0.150 x 0.125 毫米)

4. 参数特性: - 插入损耗:在DC至4.0 GHz的频率范围内,典型值为1.2 dB至1.7 dB - 隔离度:在DC至4.0 GHz的频率范围内,最小值从30 dB至50 dB - 输入P-1dB功率:在0.5 GHz至4.0 GHz的频率范围内,典型值为+17 dBm至+27 dBm - IP2和IP3:在0.5 GHz至4.0 GHz的频率范围内,典型值分别为+45 dBm至+60 dBm和+35 dBm至+46 dBm - 控制电流:在低电压(0至-0.2 V)时为50 A,高电压(-5V)时为25 A至200 A - 切换速度:上升时间为2 ns,下降时间为4 ns

5. 功能详解: - MASW4060G采用成熟的1微米门长GaAs MESFET工艺制造,具有全芯片钝化特性,以提高性能和可靠性。 - 该开关具有低插入损耗、快速切换速度和超低直流功耗的特点,并且有终止选项,符合RoHS合规性。

6. 应用信息: - 适用于需要低插入损耗、高隔离度和低功耗的应用,如通信系统、测试设备等。

7. 封装信息: - 尺寸:0.076 x 0.058 x 0.010 英寸 (1.920 x 1.470 x 0.25 毫米) - 该器件的裸片背面采用Pd/Ni/Au (100/1,000/10,000Å)金属化处理,可以通过AuSn共晶或热导电胶进行封装。
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