MASW6030G
GaAs DPDT Switch DC - 6.0 GHz
Features
• • • • Low Insertion Loss, 0.5 dB Typical Fast Switching Speed, 4 ns Typical Ultra Low DC Power Consumption RoHS* Compliant Rev. V3
Pad Layout
Description
MA/COM’s MASW6030G is a GaAs MMIC DPDT switch die. The MASW6030G is ideally used where low power consumption is required. Typical applications include transmit / receive switching, switch matrices and switched filter banks, WLAN IEEE 802.11a and 802.11 b/g systems. Other applications include cordless phones and base stations.
Ordering Information
Part Number
MASW6030G 1. Die quantity varies.
Die Size - Inches (mm)
Package
DIE 1 0.048 x 0.038 x 0.010 (1.220 x 0.970 x 0.250)
Bond Pad Dimensions
Bond Pad
RF1, RF6 RF2, RF3, RF4, RF5, A, B GND
Dimensions - Inches (mm)
0.005 x 0.005 (0.130 x 0.150) 0.004 x 0.004 (0.100 x 0.100) 0.005 x 0.013 (0.130 x 0.320)
Absolute Maximum Rating 2,3
Parameter
Control Value (A or B) Max Input RF Power Storage Temperature Max Operating Temperature
Absolute Maximum
0/-8 V +34 dBm (0.5 - 6.0 GHz with 0/-8 V CTL) -65°C to +175°C +175°C
Schematic
2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits.
Truth Table 4,5
RF1 to A
1 0
RF6 to RF4
On Off
B
0 1
RF2
On Off
RF3
Off On
RF5
Off On
4. 0 = 0 to –0.2 V, 1 = -5 V. 5. When an RF output port is “Off” it is shorted to ground through an “On” shunt MESFET. *Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
1
changes to the product(s) or information contained herein without notice.
MASW6030G
GaAs DPDT Switch DC - 6.0 GHz
Electrical Specifications: +25°C, 0/5 Vdc, 50 Ω
Parameter
Insertion Loss
6
Rev. V3
Test Conditions
DC - 1.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz 0.5 - 6.0 GHz, 0 / -5V, 0 / -8V 0.05 GHz, 0 / -5V, 0 / -8V Two Tone Input Power up to +5 dBm 0.5 - 6.0 GHz 0.05 GHz Two Tone Input Power up to +5 dBm 0.5 - 6.0 GHz 0.05 GHz VIN Low (0 to –0.2 V) VOUT High (-5 V @ 10 µA Typ to –8 V) 10% to 90% RF and 90% to 10% RF 50% control to 90% RF, and 50% control to 10% RF In Band
Units
dB dB dB dB dB dB dB dB Ratio Ratio Ratio Ratio dBm dBm dBm dBm dBm dBm µA µA nS nS mV
Min.
— — — — 40 35 25 20 — — — — — — — — — — — — — — —
Typ.
— — — — — — — — — — — — +27 / +33 +21 / +26 +68 +62 +45 +40 — — 2 4 15
Max.
0.6 0.8 1.0 1.5 — — — — 1.2:1 1.4:1 1.5:1 1.8:1 — — — — — — 5 100 — — —
Isolation
VSWR
Input P-1dB
IP2
IP3
Control Current T-rise, T-fall TON, TOFF Transients
6. Loss changes 0.0025 dB/°C (-55°C to +85°C.)
Handling Procedures
Please observe the following precautions to avoid damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW6030G
GaAs DPDT Switch DC - 6.0 GHz
Typical Performance
Insertion Loss
2.0
Insertion Loss +30°C Insertion Loss -55°C Insertion Loss +85°C
Rev. V3
Handling Precautions
Permanent damage to the MASW6030G may occur if the following precautions are not adhered to: A. Cleaniness - MASW6030G should be handled in a clean environment. DO NOT attempt to clean unit after the MASW6030G is installed. B. Static Sensitivity—All chip handling equipment and personnel should be DC grounded. C. Transient - Avoid instrument and power supply transients while bias is applied to the MASW6030G. Use shielded signal and bias cables to minimize inductive pick-up. D. Bias - Apply voltage to either of the complementary control ports only when the other is grounded. No port should be allowed to “float”. E. General Handling - It is recommended that the MASW6030G chip be handled along the long side of the die with a sharp pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers.
1.5
1.0
0.5
0.0 0 1 2 3 4 5 6 7
Frequency (GHz)
VSWR @ 25°C
2.0
1.8
1.6
Wire Bonding
1.4 1.2
1.0 0 1 2 3 4 5 6 7
Frequency (GHz)
Isolation @ 25°C
80
A. Ball or wedge with 1.0 mil diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150°C and a ball bonding force of 40 to 50 grams or wedge bonding force o1 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels achieve reliable wirebonds. B. Wirebonds should be started on the chip and terminated on the package.
70
60
50
40
30
20 0 1 2 3 4 5 6 7
Frequency (GHz)
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW6030G
GaAs DPDT Switch DC - 6.0 GHz
Mounting
The MASW6030G is back-metallized with Pd/Ni/Au (100/1,000, 10,000 Å) metallization. It can be diemounted with AuSn eutectic preforms or with thermally conductive epoxy. The package surface should be clean and flat before attachment. Eutectic Die Attach: A. A 80/20 gold/tin preform is recommended with a work surface temperature of approximately 255°C and a tool temperature of 265°C. When not 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290°C. B. DO NOT expose the MASW6030G to a temperature greater than 320°C for more than 20 seconds. No more than 3 seconds for scrubbing should be required for attachment. Epoxy Die Attach: A. Apply a minimum amount of epoxy and place the MASW6030G into position. A thin epoxy fillet should be visible around the perimeter of the chip. B. Cure epoxy per manufacturer’s recommended schedule. C. Electrically conductive epoxy may be used by is not required. Rev. V3
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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