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MASWSS0118

MASWSS0118

  • 厂商:

    MA-COM

  • 封装:

  • 描述:

    MASWSS0118 - GaAs SP4T 2.5 V High Power Switch DC - 3.0 GHz - M/A-COM Technology Solutions, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
MASWSS0118 数据手册
MASWSS0118 GaAs SP4T 2.5 V High Power Switch DC - 3.0 GHz Features • • • • • • Low Voltage Operation: 2.5 V Low Harmonics: < -65 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.65 dB at 1 GHz High Isolation: 23 dB at 2 GHz 4 mm 16-Lead PQFN Package 0.5 micron GaAs PHEMT Process Rev. V3 Functional Schematic GND Pin 16 Pin 1 V1 RF1 RF4 39 pF GND ANT 39 pF V4 Description M/A-COM’s MASWSS0118 is a GaAs PHEMT MMIC single pole four throw (SP4T) high power switch in a low cost 4 mm 16-lead PQFN package. The MASWSS0118 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size, and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other handset and related applications. This part can be used in all systems operating up to 3.0 GHz requiring high power at low control voltage. The MASWSS0118 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. GND GND RF3 39 pF 39 pF GND RF2 39 pF GND Pin Configuration Pin No. 1 2 3 4 5 6 Pin Name V1 RF1 GND RF2 GND V2 V3 GND RF3 GND GND RF4 GND V4 GND ANT Paddle 2 GND Description Control 1 RF Port 1 RF Ground RF Port 2 RF Ground Control 2 Control 3 RF Ground RF Port 3 RF Ground RF Ground RF Port 4 RF Ground Control 4 RF Ground Antenna Port RF Ground V2 Ordering Information 1 Part Number MASWSS0118TR MASWSS0118TR-3000 MASWSS0118SMB 7 Package 1000 piece reel 3000 piece reel Sample Test Board 8 9 10 11 12 13 14 15 16 17 1. Reference Application Note M513 for reel size information. 2. The exposed pad centered on the package bottom must be connected to RF and DC ground. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. V3 MASWSS0118 GaAs SP4T 2.5 V High Power Switch DC - 3.0 GHz Electrical Specifications: TA = 25°C, Z0 = 50 Ω 3 Parameter Insertion Loss 4 Rev. V3 Test Conditions DC – 1 GHz 1 – 2 GHz 2 - 3 GHz DC – 1 GHz 1 – 2 GHz 2 - 3 GHz DC – 3 GHz Two Tone +26 dBm, 5 MHz Spacing, > 50 MHz VC = 0 V / 2.5 V Two Tone +26 dBm, 5 MHz Spacing, > 50 MHz VC = 0 V / 2.5 V VC = 0 V / 2.5 V 1 GHz, PIN = +34 dBm, VC = 0 V / 2.5 V 1 GHz, PIN = +34 dBm, VC = 0 V / 2.5 V 10% RF to 90% RF, 90% to 10% RF, VC = 0 V / 2.5 V 50% control to 90% RF, 50% control to 10% RF, VC = 0 V / 2.5 V Units dB dB dB dB dB dB dB dBm dBm dBm dBc dBc µS µS mV Min. — — — 27 21 — — — — — — — — — — — Typ. 0.65 0.80 1.00 29.0 23.0 18.5 20 57 81 38 -80 -68 0.2 0.2 35 10 Max. 0.85 1.00 — — — — — — — — -71 -65 — — — 50 Isolation Return Loss IP3 IP2 P.1dB 2 nd rd Harmonic 3 Harmonic Trise, Tfall Ton, Toff Transients Control Current VC = 0 V / 2.5 V, 34 dBm µA 3. External DC blocking capacitors are required on all RF ports. 4. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 500 MHz, 39 pF for 0.5 - 3 GHz. Absolute Maximum Ratings 5,6 Parameter Input Power (0.5 - 3.0 GHz, 2.5 V Control) Voltage Operating Temperature Storage Temperature Truth Table 7,8 V1 1 Absolute Maximum +38 dBm V2 0 1 0 0 V3 0 0 1 0 V4 0 0 0 1 ANTRF1 On Off Off Off ANTRF2 Off On Off Off ANTRF3 Off Off On Off ANTRF4 Off Off Off On ± 8.5 volts -40°C to +85°C -65°C to +150°C 0 0 0 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. M/A-COM does not recommend sustained operation near these survivability limits. 7. Differential voltage, V (state 1) -V (state 2), must be 2.5 V minimum. 8. 0 = -5 V to +2.5 V, 1 = -2.5 V to +5 V Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASWSS0118 GaAs SP4T 2.5 V High Power Switch DC - 3.0 GHz Typical Performance Curves Insertion Loss vs. Temperature +25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 .0 0.5 1.0 1.5 2.0 2.5 3.0 15 0.5 1.0 1.5 2.0 2.5 3.0 Rev. V3 Isolation vs. Temperature -40°C 40 35 +25°C +85°C -40°C +85°C Insertion Loss (dB) Isolation (dB) 30 25 20 F re que nc y ( G H z) F re que nc y ( G H z) 1 GHz 2nd Harmonic Rejection 25°C -50 -60 -70 -80 -90 -100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 85°C -40°C 1 GHz 3rd Harmonic Rejection 25°C -50 -60 85°C -40°C Harm onic (dBc) Harmonic (dBc) -70 -80 -90 -100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 C o ntro l Vo lta ge (V ) C o nt ro l V o lt a ge ( V ) 4 mm 16-Lead PQFN 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.
MASWSS0118
1. 物料型号: - MASWSS0118TR:1000片卷装 - MASWSS0118TR-3000:3000片卷装 - MASWSS0118SMB:样品测试板

2. 器件简介: - MASWSS0118是一款基于砷化镓PHEMT工艺的单刀四掷(SP4T)高功率开关,工作频率高达3.0GHz,采用低成本的4mm 16引脚PQFN封装。适用于需要高功率、低控制电压、低插入损耗、高隔离度、小尺寸和低成本的应用场合。

3. 引脚分配: - 1号引脚:V1(控制1) - 2号引脚:RF1(射频端口1) - 3号引脚:GND(射频地) - 4号引脚:RF2(射频端口2) - 5号引脚:GND(射频地) - 6号引脚:V2(控制2) - 7号引脚:V3(控制3) - 8号引脚:GND(射频地) - 9号引脚:RF3(射频端口3) - 10号引脚:GND(射频地) - 11号引脚:GND(射频地) - 12号引脚:RF4(射频端口4) - 13号引脚:GND(射频地) - 14号引脚:V4(控制4) - 15号引脚:GND(射频地) - 16号引脚:ANT(天线端口) - 17号引脚:Paddle 2(射频地)

4. 参数特性: - 工作电压:2.5V - 低谐波:在+34dBm和1GHz时小于-65dBc - 低插入损耗:在1GHz时为0.65dB - 高隔离度:在2GHz时为23dB

5. 功能详解: - MASWSS0118适用于GSM和DCS手机系统,连接独立的发射和接收功能至共用天线,以及其他手机和相关应用。该器件可在所有工作频率高达3.0GHz且需要低控制电压下高功率的系统中使用。

6. 应用信息: - 典型应用包括GSM和DCS手机系统,以及其他需要高功率、低控制电压、低插入损耗、高隔离度、小尺寸和低成本的场合。

7. 封装信息: - 采用4mm 16引脚PQFN封装,封装底部中心的暴露垫必须连接至射频和直流地。
MASWSS0118 价格&库存

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