MASWSS0161TR

MASWSS0161 High Power GaAs SPDT Switch DC - 2.0 GHz Features • • • • • • • • • • • Positive Supply and Control Voltages 1 dB Compression Point: +36 dBm Typical, 8 V 3rd Order Intercept Point: +65 dBm Typical, 8 V Low Insertion Loss: 0.4 dB Typical Low Power Consumption: 100 µW Fast Switching Speed Lead-Free SOIC-8 Plastic Package 100% Matte Tin Plating over Copper Halogen-Free “Green” Mold Compound 260°C Re-flow Compatible RoHS* Compliant Version of SW-277 Rev. V3 Functional Schematic 8 7 6 5 1 2 3 4 Description M/A-COM’s MASWSS0161 is a GaAs MMIC SPDT switch in a lead free SOIC-8 lead surface mount plastic package. The MASWSS0161 is ideally suited for use where low power consumption is required. Typical applications include transmit/receive switching, switch matrices and switched filter banks in systems such as radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment. The MASWSS0161 is fabricated using a monolithic GaAs MMIC using a mature 1 micron process. The process features full chip passivation for increased performance and reliability. Pin Configuration Pin No. 1 2 3 4 Description Ground, Thermal Contact VDD RFC 3 Pin No. 5 6 7 8 Description RF Port 1 3 Control A Control B RF Port 2 3 Ground, Thermal Contact 3. External DC blocking capacitors required on all RF ports. Absolute Maximum Ratings 4,5 Parameter Absolute Maximum +37 dBm +40 dBm +42 dBm 1.0 W -1 V ≤ VDD ≤ + 12 V -1 V ≤ VC ≤ VDD + 0.2 V -40°C to +85°C -65°C to +150°C θjc = 87°C/W Input Power - 0.5 - 2.0 GHz 5 V Control and Supply 8 V Control and Supply 10 V Control and Supply Power Dissipation Supply Voltage Control Voltage Operating Temperature Ordering Information 1 Part Number MASWSS0161 MASWSS0161TR Package Bulk Packaging 1000 piece reel 1. Reference Application Note M513 for reel size information. Truth Table 2 Control Inputs A 1 0 Condition of Switch RF Common to Each RF Port B 0 1 Storage Temperature Thermal Resistance 4. 5. 6. 6 RF1 Off On RF2 On Off 2. “0” = 0 to +0.2 V @ 20 mA maximum. “1” = +5 V @ 20 mA typical to 10 V @ 500 mA maximum. Exceeding any one or combination of these limits may cause permanent damage to this device. M/A-COM does not recommend sustained operation near these survivability limits. Thermal resistance is given for TA = 25°C. TCASE is the temperature of leads 1 and 4. 1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASWSS0161 High Power GaAs SPDT Switch DC - 2.0 GHz Electrical Specifications 7: TA = +25°C, VDD = +5 V, VC = +5 V / 0 V, PIN = +30 dBm Parameter Insertion Loss Rev. V3 Test Conditions DC - 0.5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz DC - 0.5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz DC - 2.0 GHz Input Power (5 V Supply/Control) 0.9 GHz Input Power (8 V Supply/Control) 0.9 GHz 10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, 50% Control to 10% RF In-Band Measured Relative to Input Power, two-tone up to +10 dBm (5 V Supply/Control) 0.9 GHz (8 V Supply/Control) 0.9 GHz V C = +5 V VDD = +5 V Units dB dB dB dB dB dB Ratio dBm dBm nS nS mV dBm dBm µA µA Min. — — — — 27 — — — — — — — — — — — Typ.8 0.45 0.55 0.6 30 32 27 1.2:1 33 35.8 30 35 12 55 65 — — Max. — 0.65 — — — — — — — — — — — — 20 60 Isolation VSWR 1 dB Compression Trise, Tfall Ton, Toff Transients 3rd Order Intercept Control Current Supply Current 7. All specifications apply when operated with control voltages of 0 V for VC low and 5 to 10 V for VC high, and 50 W impedance at all RF ports, unless otherwise specified. High power (greater than 1 W) handling specifications apply to cold switching only. For input powers under 1 W, hot switching can be used. The high control voltage must be within ± 0.2 V of the supply voltage. External DC blocking capacitors are required on all RF ports. 8. Typical values listed for middle of frequency range noted. Lead-Free SOIC-8† † Reference Application Note M538 for lead-free solder reflow recommendations. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASWSS0161 High Power GaAs SPDT Switch DC - 2.0 GHz Typical Performance Curves Insertion Loss 1.0 Rev. V3 Isolation 40 0.8 35 0.6 +25°C -40°C +85°C 30 0.4 25 +25°C -40°C 85°C 0.2 20 0.0 0.5 1.0 1.5 2.0 15 0.5 1.0 1.5 2.0 Frequency (GHz) Frequency (GHz) VSWR 2.0 +25°C -40°C +85°C Compression vs. Control Voltage @ 900 MHz 40 1dB .1dB 1.8 35 30 1.6 25 1.4 20 1.2 15 1.0 0.5 1.0 1.5 2.0 10 3 4 5 6 7 8 9 10 Frequency (GHz) Control Voltage (VDC) Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.