UF28150J

UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V Features M/A-COM Products Released; RoHS Compliant Package Outline • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3 Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance Symbol VDS VGS IDS PD TJ TSTG ΘJC Rating 65 20 16* 389 200 -65 to +150 0.45 Units V V A W °C °C °C/W 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these maximum limits. 3. At 25°C Tcase, unless noted. ELECTRICAL SPECIFICATIONS: 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Notes: * Per side ** At all phase angles Test Conditions VGS = 0.0 V, IDS = 20.0 mA* VDS = 28.0 V, VGS = 0.0V* VGS = 20 V, VDS = 0.0 V* VDS = 10.0 V, IDS = 400.0 mA* VDS = 10.0 V, IDS = 4000.0 mA, ∆VGS = 1.0 V, 80µs pulse* VDS = 28.0V, F = 1.0 MHz* VDS = 28.0V, F = 1.0 MHz* VDS = 28.0V, F = 1.0 MHz* VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz Units BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS GP ηD VSWR-T Min. 65 — — 2.0 2.0 — — — 8 55 — Max. — 4.0 4.0 6.0 — 180 120 32 — — 10:1** 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V Typical Broadband Performance Curves Capacitance vs Voltage F=1.0 MHz Power Output vs Voltage PIN =24 W IDQ =400 mA F=500 MHz M/A-COM Products Released; RoHS Compliant CISS Power Output (W) Capacitance (PF) COSS COSS VDS (V) VDD (V) Gain vs Frequency VDD =28V POUT =100W IDQ =400mA 65 Efficiency vs Frequency VDD =28W IDQ =400mA POUT =150W Gain (dB) Efficiency (%) Frequency (MHz) 60 55 50 Power Output vs Power Input VDD =28W IDQ =400mA Frequency (MHz) Power Output (W) Power Input (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V TYPICAL OPTIMUM DEVICE IMPEDANCES F (MHz) 100 300 500 ZIN (Ω) 3.7 - j5.9 2.7 - j5.9 2.5 - j2.9 ZLOAD (Ω) 3.0 - j0.7 2.6 - j0.55 2.5 - j0.5 M/A-COM Products Released; RoHS Compliant VDD = 28V, IDQ = 400mA, POUT = 150W PARTS LIST C23 C1 C12 C2, 3, 13, 22 C7,16 C4,6,15,17 C18 R1 R2 R3 T1 T2,3,4,5 T6 L1 L2 L3,4 RL1 Q1A, 1B 1.0pF 9.1pF 11pF 270pF 680pF .015uF 50uF 50V 11K OHM .25 W. 10% 47 OHM .05 W. 10% 12 OHM .25 W. 10% 2.50’ OF 50 OHM (.85’ OD) SEMI-RIGID CABLE 2.50’ OF 10 OHM (.70’ OD) SEMI-RIGID CABLE 2.50’ OF 50 OHM (.141’ OD) SEMI-RIGID CABLE 5uH 16 TURNS OF NO. 18 AWG ON TORID CORE (INDIANA GENERAL F6278-Q1) 4 TURNS OF NO. 18 AWG ON .125 DIAMETER 9 TURNS OF NO. 18 AWG ON 15 OHM 2 W. 10% RESISTOR UF28150J HANDLING PROCEDURES: STATIC SENSITIVITY Please observe the following precautions to avoid damage: DMOS devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.