UF2840G

UF2840G RF Power MOSFET Transistor 40W, 100-500 MHz, 28V Features M/A-COM Products Released; RoHS Compliant Package Outline • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices Parameter Symbol VDS VGS IDS PD TJ TSTG θJC ZIN (Ω) 6.0-j20.0 3.5-j11.5 2.5-j5.5 3.0+j0.0 4.0+j3.0 Rating 65 20 4* 116 200 -55 to 150 1.52 Units V V A W °C °C °C/W ZLOAD (Ω) 12.0+j6.0 16.5+j19.5 13.0j13.0 12.0+j9.0 +12.0j5.0 ABSOLUTE MAXIMUM RATINGS AT 25° C Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance F (MHz) 100 200 300 400 500 TYPICAL DEVICE IMPEDANCES VDD=28V, IDQ=500 mA, POUT =40.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance *Per side Symbol BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS GP ŋD VSWR-T Min 65 2.0 .500 10 50 Max 1.0 1.0 6.0 45 30 8 30:1 Units V mA µA V S pF pF pF dB % Test Conditions VGS = 0.0 V , IDS = 5.0 mA VGS = 28.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 100.0 mA VDS = 10.0 V , IDS 1.0 A , Δ VGS = 1.0V, 80 μs Pulse VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF2840G RF Power MOSFET Transistor 40W, 100-500 MHz, 28V Typical Broadband Performance Curves GAIN VS FREQUENCY VDD =28 V IDQ=500 mA POUT =40 W EFFICIENCY VS FREQUENCY VDD=200 V IDD =500 mA POUT =40 W M/A-COM Products Released; RoHS Compliant 30 25 GAIN (dB) 20 15 0 100 70 65 60 55 50 100 EFFICIENCY (W) 200 300 400 500 200 300 400 500 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =500 mA 60 200MHz POWER OUTPUT (W) 60 40 30 20 10 0 0 .01 300MHz 100MHz 400 MHz 500MHz 0.25 0.5 1 POWER INPUT (W) 2 2.5 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF2840G RF Power MOSFET Transistor 40W, 100-500 MHz, 28V TEST FIXTURE SCHEMATIC M/A-COM Products Released; RoHS Compliant TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.