UF2840P

UF2840P RF Power MOSFET Transistor 40W, 100-500 MHz, 28V Features M/A-COM Products Released; RoHS Compliant Package Outline • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance Symbol VDS VGS IDS PD TJ TSTG θJC ZIN (Ω) 6.0-j20.0 2.5-j5.5 4.0+j3.0 Rating 65 20 4* 116 200 -55 to 150 1.5 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCES F (MHz) 100 300 500 ZLOAD (Ω) 25.0j27.0 13.0+j13.0 12.0j5.0 VDD=28V, IDQ=500 mA, POUT =40.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance *Per side Symbol BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS GP ŋD VSWR-T Min 65 2.0 .5 10 50 Max 1.0 1.0 6.0 45 30 8 20:1 Units V mA µA V S pF pF pF dB % Test Conditions VGS = 0.0 V , IDS = 5.0 mA VGS = 28.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 100.0 mA VDS = 10.0 V , IDS 1.0 A , Δ VGS = 1.0V, 80 μs Pulse VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF2840P RF Power MOSFET Transistor 40W, 100-500 MHz, 28V Typical Broadband Performance Curves CAPACITANCES VS VOLTAGE F=1.0MHz POPWER OUTPUT (W) M/A-COM Products Released; RoHS Compliant 40 35 CAPACTANCES (pF) 30 25 20 15 10 5 0 5 50 40 30 20 10 0 POWER OUTPUT VS VOLTAGE PIN=3.0 W IDQ=500 mA POUT=500 W COSS CISS CRSS 10 15 VDS(V) 20 25 30 5 10 15 VDD(V) 20 25 35 30 25 GAIN (dB) 20 15 10 100 GAIN VS FREQUENCY VDD =28 V POUT=40 W IDQ =500 mA 65 EFFICIENCY VS FREQUENCY VDD=28V IDQ =500 mA POUT =40 W EFFICIENCY (W) 200 300 400 500 60 55 50 100 200 300 400 500 FREQUENCY (MHz) FREQUENCY (MHz) 60 POWER OUTPUT (W) 50 40 30 10 0 0.1 POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =500 mA 100MHz 300MHz 500 MHz 0.25 1 2 2.5 POWER INPUT (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF2840P RF Power MOSFET Transistor 40W, 100-500 MHz, 28V TEST FIXTURE SCHEMATIC V DS = 2 8 V OL T S I DQ = 5 00mA V GS J3 L1 L4 C12 C9 C10 L2 R1 C11 R3 C13 + V DD J4 C14 M/A-COM Products Released; RoHS Compliant R2 Q1A RF I N J1 C5 T1 T2 C2 C3 C4 Q1B L3 C7 RF OUT J2 T3 C8 C6 C1 TEST FIXTURE SCHEMATIC 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.