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AM42-0040_1

AM42-0040_1

  • 厂商:

    MACOM

  • 封装:

  • 描述:

    AM42-0040_1 - GaAs MMIC VSAT Power Amplifier 2.0W 5.9 - 6.4GHz - Tyco Electronics

  • 详情介绍
  • 数据手册
  • 价格&库存
AM42-0040_1 数据手册
RoHS Compliant GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz Features • • • • • • High Linear Gain: 30 dB Typical High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 26% Typ. 50 Ω Input/Output Broadband Matched Lead-Free Ceramic Bolt Down Package RoHS* Compliant and 260°C Reflow Compatible AM42-0040 V3 Functional Schematic N/C GND VDD GND Description M/A-COM’s AM42-0040 is a three-stage MMIC power amplifier in a lead-free, ceramic bolt down style hermetic package. The AM42-0040 employs an internally matched monolithic chip with internally decoupled Gate and Drain bias networks. The AM42-0040 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications. The AM42-0040 is designed for use as an output stage or driver amplifier for C-band VSAT transmitter systems. This amplifier employs a fully monolithic chip and requires a minimum of external components. M/A-COM’s AM42-0040 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications. RFIN GND VGG RFOUT VDET N/C Pin Configuration Pin No. 1 2 3 4 5 6 7 Pin Name N/C GND RF In GND VGG N/C VDET RF Out GND VDD Description No Connection DC and RF Ground RF Input DC and RF Ground Gate Supply No Connection Detector RF Output DC and RF Ground Drain Supply Ordering Information Part Number AM42-0040 8 9 Package Ceramic Bolt Down Package 10 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz AM42-0040 V3 Electrical Specifications: TA = 25°C, VDD = +9 V, VGG adjusted for IDD = 1050 mA Parameter Linear Gain Input VSWR Output VSWR Output Power Output Power vs. Frequency Output Power vs. Temperature (with respect to TA = 25°C) Drain Bias Current Gate Bias Voltage Gate Bias Current Thermal Resistance Second Harmonic Third Harmonic VDET Test Conditions PIN < -10 dBm PIN < -10 dBm PIN < -10 dBm PIN = +10 dBm, IDD = 1050 mA Typ. PIN = +10 dBm, IDD = 1050 mA Typ. PIN = +10 dBm, IDD = 1050 mA Typ. TA = -40°C to +70°C PIN = +10 dBm PIN = +10 dBm, IDD = 1050 mA Typ. PIN = +10 dBm, IDD = 1050 mA Typ. 25°C Heat Sink PIN = +10 dBm, IDD = 1050 mA Typ. PIN = +10 dBm, IDD = 1050 mA Typ. Units dB Ratio Ratio dBm dB dB mA V mA °C/W dBc dBc V Min. 27 — — 31.7 — — 900 -2.4 — — — — 2 Typ. 30 2.3:1 3.0:1 33.0 1.0 ±0.4 1050 -1.2 5 5.6 -35 -45 — Max. — 2.7:1 — 34.5 1.5 — 1100 -0.4 20 — — — — Absolute Maximum Ratings 1,2,3 Parameter Input Power VDD VGG VDD - VGG IDD Channel Temperature Storage Temperature 1. 2. 3. Typical Bias Configuration4,5,6,7,8 Absolute Maximum +23 dBm +12 Volts -3 Volts +12 Volts 1700 mA -40°C to +85°C -65°C to +150°C Exceeding any one or combination of these limits may cause permanent damage to this device. M/A-COM does not recommend sustained operation near these survivability limits. Case Temperature (TC) = +25°C. 4. Nominal bias is obtained by first connecting -2.4 volts to pin 5 (VGG), followed by connection +9 volts to pin 10 (VDD). Note sequence. Adjust VGG for a drain current of 1050 mA typical. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. No DC bias voltage appears at the RF ports. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of the VDD leads. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0040. 5. 6. 7. 8. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz Typical Performance Curves @ +25°C Linear Gain vs. Frequency 40 30 20 10 -15 AM42-0040 V3 Input and Output Return Loss vs. Frequency 0 -5 -10 0 -10 -20 -30 -40 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 -20 -25 -30 -35 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 S11 S22 Frequency (GHz) Output Power vs. Frequency @ PIN = +10 dBm 35 30 25 20 Frequency (GHz) PAE vs. Frequency @ PIN = +10 dBm 30 25 20 15 15 10 5 0 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 10 5 0 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 Frequency (GHz) Output Power vs. Input Power @ 6.15 GHz 35 34 33 32 31 30 0 2 4 6 8 10 12 14 Frequency (GHz) PAE vs. Input Power @ 6.15 GHz 25 20 15 10 5 0 0 2 4 6 8 10 12 14 P (dBm) IN P (dBm) IN 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz Lead-Free CR-15† Handling Procedures Please observe the following precautions to avoid damage: AM42-0040 V3 Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
AM42-0040_1
1. 物料型号: - 型号:AM42-0040 V3

2. 器件简介: - AM42-0040是M/A-COM公司生产的一个三级MMIC功率放大器,采用无铅陶瓷螺栓固定式密封封装。该放大器内部匹配了单片芯片,并配备了内部去耦的栅极和漏极偏置网络。设计用于从恒定电流漏极供电操作,通过改变栅极偏置电压,可以调整该设备的饱和输出功率性能,以适应不同应用。

3. 引脚分配: - 1: N/C(无连接) - 2: GND(直流和射频地) - 3: RF In(射频输入) - 4: GND(直流和射频地) - 5: VGG(栅极供电) - 6: N/C(无连接) - 7: VDET(检测器) - 8: RF Out(射频输出) - 9: GND(直流和射频地) - 10: VDD(漏极供电)

4. 参数特性: - 线性增益:典型值为30dB - 饱和输出功率:典型值为+33dBm - 功耗增效:典型值为26% - 输入/输出为50欧姆宽带匹配 - 无铅陶瓷螺栓固定封装 - 符合RoHS标准,兼容260°C回流焊

5. 功能详解: - 设计用于C波段VSAT发射机系统的输出级或驱动放大器。该放大器采用全单片芯片,并需要最少的外部组件。 - 使用成熟的0.5微米GaAs MESFET工艺制造,具有全面的钝化以提高性能和可靠性。 - 产品经过100%射频测试,以确保符合性能规范。

6. 应用信息: - 适用于C波段VSAT发射机系统的输出级或驱动放大器。

7. 封装信息: - 封装类型:陶瓷螺栓固定封装。
AM42-0040_1 价格&库存

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