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RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor AppIications . *Broadband Linear Operation 500 MHz to 1400 MHz
LF2805A
Absolute Maximum Ratings at 25°C
Electrical Characteristics at 25°C
Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage ForwardTransconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Symbol BV,,, ‘Dss IGSS VGSCTW GM C ISS Coss CRSS GP ‘1D VSWR-T 10 50 2.0
Min 65 -
Max 1.0 1.0
6.0
Units V mA p-4
V
lest Conditions V,,=O.O V, 1,,=2.0 mA V,,=28.0 V, V,,=O.O V
v,,=20 v, v,,=o.o v
V&O.0 V&O.0 V&8.0
V, l,,=lO.O mA V, i&00.0 mA, AVGs=l .O V, 80 us
Puke
80
7
mS PF PF
pF
V, F-l.0 MHz
5
2.4
V,,=28.0 V, F-1 .OMHz V,,=28.0 V, F=l .O MHz V,,d8.0 V, I,,=50 mA, PO,+0 W, F=l .O GHz W, F=l .OGHz
2O:l
dB % -
V,,=28.0 V, I,,=50 mA, P,s5.0
V,,=28.0 V, I,,=50 mA, P,&%O W, F=l .OGHz
M/A-COM, Inc.
North America:
Specifications Subject to Change Without Notice.
9-71
Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 8 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, 5W, 28V
LF2805A
v2.00
Typical Broadband Performance
Curves
POWER OUTPUT
7 6-
CAPACITANCES
7
vs VOLTAGE
vs VOLTAGE
mA
F=l .O MHz
F=l .O GHz P,,=O.5 W I,,=50
GAIN vs FREQUENCY
V,,=28
20
EFFICIENCY
W V,,=28
vs FREQUENCY
mA P,,=5.0 W
V I,,=50 mA P0,,=5.0
V I,,=50
15 s ‘0 210 z 5-
500
700
1000
1400
500
750
1000
1250
1400
FREQUENCY (MHz)
FREQUENCY (MHz)
POWER OUTPUT
V,,=28
vs POWER
V I,,=50 mA
OUTPUT
I;-
p-p=
3 i?
21 0 0 0.05 02 0.4 0.6 0.6 1
POWER INPUT (W)
Specifications Subject to Change Without Notice.
9-72
North America: Tel. (800) Fax (800) 366-2266 618-8883 D Asia/Pacific: Tel. Fax +81 (03) +81 (03) 3226-1671 3226-1451
n
M/A-COM,
Europe: Tel. Fax +44 +44 (1344) (1344)
Inc.
869 595 300 020
RF MOSFET Power Transistor,
5W. 28V
LF2805A
v2.00
Typical Device Impedance
Frequency (MHz)
q,, (OHMS)
4.3 - j 29.0 2.2 - j 2.75 2.8 + j 3.0 v,,=28 V, iDo= mA, P,,=5.0 Watts
z LOAD (OHMS)
27.3 + j 28.6 8.0 + j 16.0 9.4+j 10.6
500
1000
1400
Z,, is the series equivalent input impedance of the device from gate to source. $ z, OAB the optimum series equivalent load impedance as measured from drain to ground.
RF Test Fixture
POWER SUPPLY JACK LlK OHMS l/8 WATT
10 TURNS UF 18 AWG
WIRE (2 PLACES)
INPUT
560 pf L-560 pf
L-,180
I-
1.740
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America: Tel. (800) 366-2266 Fax (800) 618-8883
n
9-73
Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
n
Asia/Pacific:
Europe:
Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
