MAPL-000817-015C00

RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 1/11/06 Preliminary MAPL-000817-015C00 Features Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz, 26Vdc, CW • Typical Power Output: 16.5W • Gain: 16.5dB • Efficiency: 50% • 10:1 VSWR Ruggedness at 15W, 26Vdc, 960MHz • Package Style MAPL-000817-015C00 Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 31.25 -65 to +150 150 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 4 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 30 µAdc) Gate Threshold Voltage (Vds = 26 Vdc, Id = 100 mA) Gate Quiescent Voltage (Vds = 26 Vdc, Id = 100 mA) Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 1 A) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (1) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W) Input Return Loss (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W) Input Return Loss (VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W) Symbol Min Typ Max Unit V(BR)DSS VGS(th) 65 2 — — — 5 Vdc Vdc VDS(Q) 3 — 5 Vdc VDS(on) — 0.25 — Vdc GP EFF (ŋ) IRL Ψ — — — 17 50 -10 — — — dB % dB No Degradation In Output Power Before and After Test — — — 12.5 50 -10 — — — dB % dB GP EFF (ŋ) IRL (1) Device specifications obtained on a Production Test Fixture. 2 RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary C1,C7 Tantalum Surface Mt. Cap., 100 µF, 35 V C2,C8 Ceramic Chip Capacitor, 0.1 µF C3,C9 Ceramic Chip Capacitor, 1000 pF C4,C10,C12 Chip Capacitor, 33 pF ATC100A C5 Chip Capacitor, 10.0 pF ATC100A C6 Chip Capacitor, 11.0 pF ATC100A C11 Chip Capacitor, 8.2 pF ATC100A J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 18 nH, CoilCraft 1206CS L2 Inductor, 27 nH, CoilCraft 1206CS P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPL-000817-015C00 R1 Chip Resistor (0805), 10k Ohm Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Distributed Microstrip Element, 0.125” x 0.046” Distributed Microstrip Element, 0.506” x 0.046” Distributed Microstrip Element, 0.080” x 0.046” Distributed Microstrip Element, 0.020” x 0.178” Distributed Microstrip Element, 0.253” x 0.178” Distributed Microstrip Element, 0.315” x 0.178” Distributed Microstrip Element, 0.312” x 0.046” Distributed Microstrip Element, 0.613” x 0.046” Distributed Microstrip Element, 0.125” x 0.046” PC Board Rogers (RO4350) Duroid, 0.020:” thick, Er=3.5, 1 Oz Copper Both Sides Figure 1. 920—960 MHz Test Fixture Schematic Figure 2. 920—960 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary C1,C6 Tantalum Surface Mt. Cap., 100 µF, 35 V C2,C7 Ceramic Chip Capacitor, 0.1 µF C3,C8 Ceramic Chip Capacitor, 1000 pF C4,C9,C12 Chip Capacitor, 33 pF ATC100A C5 Chip Capacitor, 4.7 pF ATC100A C10 Chip Capacitor, 3.0 pF ATC100A C11 Chip Capacitor, 3.3 pF ATC100A J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 18 nH, CoilCraft 1206CS L2 Inductor, 27 nH, CoilCraft 1206CS P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPL-000817-015C00 R1 Chip Resistor (0805), 10k Ohm Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Distributed Microstrip Element, 0.125” x 0.046” Distributed Microstrip Element, 0.533” x 0.046” Distributed Microstrip Element, 0.080” x 0.026” Distributed Microstrip Element, 0.127” x 0.046” Distributed Microstrip Element, 0.146” x 0.046” Distributed Microstrip Element, 0.077” x 0.178” Distributed Microstrip Element, 0.211” x 0.178” Distributed Microstrip Element, 0.029” x 0.178” Distributed Microstrip Element, 0.920” x 0.046” Distributed Microstrip Element, 0.125” x 0.046” PC Board Rogers (RO4350) Duroid, 0.020:” thick, Er=3.5, 1 Oz Copper Both Sides Figure 3. 1620-1670 MHz Test Fixture Schematic Figure 4. 1620—1670 MHz Test Fixture Component Layout 4 RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary Figure 5. MAPL-000817-015C00 Pin Connections 5 RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary 20 20 19 19 18 18 CW, 26V, IDQ=100mA CW, 26V, IDQ=100mA 80 80 70 70 60 60 50 50 40 40 30 30 Gain (dB) Gain (dB) 17 17 16 16 15 15 14 14 13 13 12 12 30 30 Gain 960 MHz Gain 960 MHz Gain 925 MHz Gain 925 MHz Eff. 960MHz Eff. 960MHz Eff. 925 MHz Eff. 925 MHz 32 32 34 34 36 36 38 38 40 40 42 42 20 20 10 10 0 0 44 44 Pout (dBm) Pout (dBm) Graph 1. 925, 960MHz: CW Power Gain and Drain Efficiency vs. Output Power 20 20 -10 -10 -20 -20 -30 -30 25 25 Pout (dBm) Pout (dBm) 30 30 35 35 40 40 26V, IDQ=100mA, 100kHz Tone Spacing 26V, IDQ=100mA, 100kHz Tone Spacing IMD (dBc) IMD (dBc) -40 -40 -50 -50 -60 -60 -70 -70 IMD3 (960 MHz) IMD3 (960 MHz) IMD5 (960MHz) IMD5 (960MHz) IMD3(925MHz) IMD3(925MHz) IMD5(925MHz) IMD5(925MHz) Graph 2. 925, 960 MHz: 2 Tone Intermodulation Distortion vs. Output Power 6 Drain Efficiency (%) Drain Efficiency (%) RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary 20 20 18 CW, 26V, IDQ=100mA 18 CW, 26V, IDQ=100mA 16 16 14 14 60 60 55 55 45 45 40 40 35 35 30 30 Gain (dB) Gain (dB) 12 12 10 10 88 66 44 22 00 30 30 32 32 34 34 36 36 38 38 Gain 1670MHz Gain 1670MHz Gain 1620MHz Gain 1620MHz Eff. 1670MHz Eff. 1670MHz Eff. 1620MHz Eff. 1620MHz 40 40 42 42 25 25 20 20 15 15 10 10 Pout (dBm) Pout (dBm) Graph 3. 1620, 1670MHz: CW Power Gain and Drain Efficiency vs. Output Power 00 -10 -10 -20 -20 26V, 1670MHz, 100kHz Tone Spacing 26V, 1670MHz, 100kHz Tone Spacing IMD3 100mA IMD3 100mA IMD5 100mA IMD5 100mA IMD3 160mA IMD3 160mA IMD5 160mA IMD5 160mA IMD (dBc) IMD (dBc) -30 -30 -40 -40 -50 -50 -60 -60 -70 -70 33 33 34 34 35 35 36 36 37 37 38 38 39 39 Pout Avg (dBm) Pout Avg (dBm) Graph 4. 1620, 1670MHz: 2 Tone Intermodulation Distortion vs. Output Power 7 Drain Efficiency (%) Drain Efficiency (%) 50 50 RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary Package Dimensions Test Fixture Circuit Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 8 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020