RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 90W, 26V
5/14/04
Preliminary
MAPLST0810-090CF
Features
Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC: POUT: 90W (P1dB) Gain: 18dB Efficiency: 50% Ruggedness: 10:1 VSWR @ 90W CW, 26V, 900MHz High Gain, High Efficiency and High Linearity Internal Input Match Excellent Thermal Stability
Package Style
P-238
Maximum Ratings
Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 206 -40 to +150 +200 Units Vdc Vdc W °C °C
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 0.85 Unit ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS Transistor, 865-960 MHz, 90W, 26V
MAPLST0810-90CF
5/14/04
Preliminary
Characteristic DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µA) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mA) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W) Input Return Loss (VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W) Two-Tone Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz, POUT = 90 PEP) Two-Tone Drain Efficiency (VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz, POUT = 90 PEP) Two-Tone Intermodulation Distortion (VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz, POUT = 90 PEP) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 700 mA, f = 900 MHz, POUT = 90 W, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Symbol
Min
Typ
Max
Unit
V(BR)DSS IDSS IGSS VGS(th)
65 — — 2
— — — —
— 1 3 4
Vdc µAdc µAdc Vdc
VDS(Q)
—
4.0
—
Vdc
VDS(on) Gm
—
0.20
—
Vdc
—
7
—
S
Coss Crss
— —
98 4.5
— —
pF pF
GP EFF (ŋ) IRL GP
— — — —
18 50 12 18
— — — —
dB % dB dB
EFF (ŋ)
—
38
—
%
IMD
—
-30
—
dBc
Ψ
No Degradation In Output Power Before and After Test
2
RF Power LDMOS Transistor, 865-960 MHz, 90W, 26V
MAPLST0810-90CF
5/14/04
Preliminary
20 19 18 70 60 50 40 30
Gain (26V) Gain (28V) Efficiency (26V) Efficiency (28V) 38 43 48 53
CW: f = 870MHz, VDD = 26/28V, IDQ=700mA
8 7
EDGE: 870MHz, VDD = 26/28V, IDQ=700mA
Efficiency (%)
6 EVM(%) 5 4 3 2 1 0 38 40 42 44 46 48 POUT(dBm- Avg.)
EVM (26volts) EVM (28volts)
Gain(dB)
17 16 15 14 13
20 10 0
POUT(dBm- Avg.)
Graph 1. CW Power Gain and Efficiency vs. Output Power
Graph 2. EDGE RMS EVM vs. Output Power
-20 -25 -30 -35 -40 -45 -50 -55 -60 -65
2-TONE: f = 870MHz, VDD = 26/28V, IDQ = 700mA
IMD (dBc)
IM3 (26V) IM3 (28V)
40
42
44
45
46
47
POUT (dBm - Avg.)
Graph 3. Two-Tone Intermodulation vs. Output Power
3
RF Power LDMOS Transistor, 865-960 MHz, 90W, 26V
MAPLST0810-90CF
5/14/04
Preliminary
Package Dimensions Test Fixture Circuit Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
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