MAPLST1900-030CF

RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V 10/31/03 Preliminary MAPLST1900-030CF Features Designed for PHS applications in the 1890-1925 MHz frequency band. Typical performance in PHS mode at -68 dBc ACPR (600kHz): Average Output Power: 8W Gain: 13dB (typ.) Efficiency: 26% (typ.) 10:1 VSWR Ruggedness at 8W, 26V, 1890MHz) Package Style MAPLST1900-030CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.8 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V MAPLST1900-030CF 10/31/03 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage OFF(VGS = 0 Vdc, ID = 20 µAdc) CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 26 (VDS = 65 Vdc, VGS = 0) DS GS Gate—Source Leakage Leakage Zero Gate Voltage DrainCurrent Current (VGS = 5 Vdc, V ) (VDS = 26Vdc, VDS ==00) GS Gate Threshold Voltage Gate—Source Leakage Current (VDS = 10 Vdc, ID = 1 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON CHARACTERISTICS mA) (VDS = 26 Vdc, ID = 250 Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Input Capacitance (Including Input Matching DYNAMIC CHARACTERISTICS (1) Capacitor in Package) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer TESTS (In FUNCTIONAL Capacitance M/A-COM Test Fixture) (2) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) PHS Gain (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1920 MHz) PHS Drain Efficiency (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1920 MHz) PHS ACPR @ 600 kHz offset (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1905 MHz) PHS ACPR @ 900 kHz offset (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1905 MHz) PHS Gain (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1890 MHz) PHS Drain Efficiency (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1890 MHz) Input Return Loss (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1920 MHz) Output VSWR Tolerance (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1890 MHz) Gps — 13.0 — dB Ciss Coss Crss — — 90 32.5 — — pF pF Symbol Symbol V(BR)DSS IDSS IDSS IGSS IDSS VGS(th) IGSS VDS(Q) VDS(on) Gm Min Min 65 — — — — — 2 2 — — Typ Typ — — — — — — — — 0.2 1.2 Max Max — 101 11 1 4 Unit Unit Vdc µAdc µAdc µAdc µAdc Vdc µAdc Vdc Vdc S 4.5 — — — 1.5 — pF EFF (ŋ) — 26 — % ACPR — -68 — dBc ACPR — -78 — dBc Gps — 13.0 — dB EFF (ŋ) — 26 — % IRL — -12 -9 dB Ψ No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V MAPLST1900-030CF 10/31/03 Preliminary C1,C7 Electrolytic Surface Mt. Cap., 100 µF, 35 V C2,C8 Ceramic Chip Capacitor, 0.1 µF C3,C9 Ceramic Chip Capacitor, 1000 pF C4,C5,C10,C11 Chip Capacitor, 8.2 pF ATC100B C6 Chip Capacitor, 0.5 pF ATC100B C12 Chip Capacitor, 1.2 pF ATC100B J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft A03T L2,L3 Inductor, 18.5 nH, CoilCraft A05T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST1900-030CF R1 Chip Resistor (0805), 100k Ohm R2 Chip Resistor (0805), 10K Ohm Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Distributed Microstrip Element, 0.851” x 0.082” Distributed Microstrip Element, 0.105” x 0.082” Distributed Microstrip Element, 0.515” x 0.082” Distributed Microstrip Element, 0.370” x 0.160” Distributed Microstrip Element, 0.460” x 0.300” Distributed Microstrip Element, 0.226” x 0.660” Distributed Microstrip Element, 0.425” x 0.380” Distributed Microstrip Element, 0.792” x 0.082” Distributed Microstrip Element, 0.283” x 0.082” Distributed Microstrip Element, 0.565” x 0.082” PC Board (74350132-01), Arlon Woven Glass Teflon .030” Thick, Er=2.54, 2 Oz Copper Both Sides Figure 1. 1890—1925 MHz Test Fixture Schematic Figure 2. 1890—1925 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V MAPLST1900-030CF 10/31/03 Preliminary 13.50 13.25 13.00 12.75 12.50 Gain (dB) 40 35 30 Efficiency (%) 25 20 15 10 5 0 30 31 32 33 34 35 36 37 38 39 40 41 42 43 POUT(dBm) avg. 12.25 12.00 11.75 11.50 11.25 11.00 10.75 f Gain (1899MHz) Gain (1905MHz) Eff (1899MHz) Eff (1905MHz) Graph 1. PHS: Power Gain and Drain Efficiency vs. Output Power POUT(dBm) avg. 30 -55 ACPR (600kHz Offset) @ 1905MHz Pi/4 DQPSK,192 kHz, 26VDC, 250mA 31 32 33 34 35 36 37 38 39 40 41 42 43 -60 ACPR Lower (1905MHz) ACPR Upper (1905MHz) Gain(dB) -65 -70 -75 -80 Graph 2. PHS: Adjacent Channel Power Ratio vs. Output Power 4 RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V MAPLST1900-030CF 10/31/03 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. 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